DE3787595T2 - Verfahren zum Entfernen von unerwünschten Teilchen von der Oberfläche eines Substrats. - Google Patents

Verfahren zum Entfernen von unerwünschten Teilchen von der Oberfläche eines Substrats.

Info

Publication number
DE3787595T2
DE3787595T2 DE87201332T DE3787595T DE3787595T2 DE 3787595 T2 DE3787595 T2 DE 3787595T2 DE 87201332 T DE87201332 T DE 87201332T DE 3787595 T DE3787595 T DE 3787595T DE 3787595 T2 DE3787595 T2 DE 3787595T2
Authority
DE
Germany
Prior art keywords
substrate
removing unwanted
unwanted particles
particles
unwanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87201332T
Other languages
English (en)
Other versions
DE3787595D1 (de
Inventor
Adriaan Franciscus Ma Leenaars
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3787595D1 publication Critical patent/DE3787595D1/de
Application granted granted Critical
Publication of DE3787595T2 publication Critical patent/DE3787595T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
DE87201332T 1986-07-28 1987-07-14 Verfahren zum Entfernen von unerwünschten Teilchen von der Oberfläche eines Substrats. Expired - Fee Related DE3787595T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8601939A NL8601939A (nl) 1986-07-28 1986-07-28 Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat.

Publications (2)

Publication Number Publication Date
DE3787595D1 DE3787595D1 (de) 1993-11-04
DE3787595T2 true DE3787595T2 (de) 1994-03-24

Family

ID=19848356

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87201332T Expired - Fee Related DE3787595T2 (de) 1986-07-28 1987-07-14 Verfahren zum Entfernen von unerwünschten Teilchen von der Oberfläche eines Substrats.

Country Status (6)

Country Link
US (1) US4781764A (de)
EP (1) EP0255167B1 (de)
JP (1) JP2517607B2 (de)
KR (1) KR960013142B1 (de)
DE (1) DE3787595T2 (de)
NL (1) NL8601939A (de)

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US4962776A (en) * 1987-03-26 1990-10-16 Regents Of The University Of Minnesota Process for surface and fluid cleaning
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH047071A (ja) * 1990-04-24 1992-01-10 Ebara Res Co Ltd 洗浄方法
ATE258084T1 (de) 1991-10-04 2004-02-15 Cfmt Inc Superreinigung von komplizierten mikroteilchen
JP2777498B2 (ja) * 1991-12-06 1998-07-16 三菱電機株式会社 基板の洗浄方法
US5660642A (en) * 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
US6045624A (en) * 1996-09-27 2000-04-04 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US20040007255A1 (en) * 1997-06-20 2004-01-15 Labib Mohamed Emam Apparatus and method for cleaning pipelines, tubing and membranes using two-phase flow
KR100452542B1 (ko) 1998-04-14 2004-10-12 가부시끼가이샤가이죠 세정물 건조장치 및 건조방법
US6090217A (en) 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
EP1290720A1 (de) 2000-06-16 2003-03-12 Applied Materials, Inc. Konfigurierbare integrierte mehrkammer-reinigungsvorrichtung zur nass-trocken-behandlung von einzelnen substraten
US6899111B2 (en) * 2001-06-15 2005-05-31 Applied Materials, Inc. Configurable single substrate wet-dry integrated cluster cleaner
US6398875B1 (en) 2001-06-27 2002-06-04 International Business Machines Corporation Process of drying semiconductor wafers using liquid or supercritical carbon dioxide
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
US20040031167A1 (en) 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US7799141B2 (en) 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US7737097B2 (en) 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US8316866B2 (en) 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US8522801B2 (en) 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US7416370B2 (en) 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US7862662B2 (en) 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US7568490B2 (en) 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US8522799B2 (en) 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US8070884B2 (en) * 2005-04-01 2011-12-06 Fsi International, Inc. Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance
EP2428557A1 (de) 2005-12-30 2012-03-14 LAM Research Corporation Reinigungslösung
US7897213B2 (en) 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US8211846B2 (en) 2007-12-14 2012-07-03 Lam Research Group Materials for particle removal by single-phase and two-phase media
US8226774B2 (en) 2008-09-30 2012-07-24 Princeton Trade & Technology, Inc. Method for cleaning passageways such an endoscope channels using flow of liquid and gas
US8114221B2 (en) 2008-09-30 2012-02-14 Princeton Trade & Technology, Inc. Method and composition for cleaning tubular systems employing moving three-phase contact lines

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Publication number Priority date Publication date Assignee Title
DE1497779A1 (de) * 1966-04-27 1969-10-02 Helmut Schneider Verfahren und Vorrichtung zur Erzeugung von Schall- oder Ultraschallwellen an Oberflaechen
SU380754A1 (ru) * 1969-04-08 1973-05-15 Способ химического обезжиривания металлических поверхностей
US3664871A (en) * 1970-03-30 1972-05-23 Atlantic Richfield Co Coating removal method
JPS52125582A (en) * 1975-03-12 1977-10-21 Mitsui Mining & Smelting Co Method of peeling other substance from plastics
US4186032A (en) * 1976-09-23 1980-01-29 Rca Corp. Method for cleaning and drying semiconductors
US4118649A (en) * 1977-05-25 1978-10-03 Rca Corporation Transducer assembly for megasonic cleaning
US4178188A (en) * 1977-09-14 1979-12-11 Branson Ultrasonics Corporation Method for cleaning workpieces by ultrasonic energy
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
JPS5527032A (en) * 1978-08-14 1980-02-26 Fujitsu Ltd Washing method by distilled liquid
US4238244A (en) * 1978-10-10 1980-12-09 Halliburton Company Method of removing deposits from surfaces with a gas agitated cleaning liquid
US4375992A (en) * 1980-12-24 1983-03-08 Rca Corporation Apparatus and method for cleaning recorded discs
JPS58132934A (ja) * 1982-02-03 1983-08-08 Nec Corp 半導体ウエハ−の水洗方法
JPS60223130A (ja) * 1984-04-19 1985-11-07 Sharp Corp 基板の洗滌乾燥方法及びその装置
JPS6115334A (ja) * 1984-07-02 1986-01-23 Tasu Gijutsu Kenkyusho:Kk 超音波洗浄方法
JPS6160799A (ja) * 1984-08-31 1986-03-28 株式会社東芝 洗浄液
JPS6187338A (ja) * 1984-10-05 1986-05-02 Nec Corp 多重ビ−ム照射Ｓｉ表面ドライ洗浄法
JPS61228629A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp ウエハ等薄板体の表面処理装置
KR890001502B1 (ko) * 1985-06-24 1989-05-06 씨.에프.엠 테크늘러지즈 인코포레이티드 반도체 웨이퍼 흐름 처리공정 및 그 장치

Also Published As

Publication number Publication date
EP0255167B1 (de) 1993-09-29
DE3787595D1 (de) 1993-11-04
NL8601939A (nl) 1988-02-16
EP0255167A2 (de) 1988-02-03
EP0255167A3 (en) 1989-06-28
KR960013142B1 (ko) 1996-09-30
US4781764A (en) 1988-11-01
JP2517607B2 (ja) 1996-07-24
KR880002246A (ko) 1988-04-29
JPS6336535A (ja) 1988-02-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee