DE3789585T2 - Leitende organische Struktur. - Google Patents
Leitende organische Struktur.Info
- Publication number
- DE3789585T2 DE3789585T2 DE3789585T DE3789585T DE3789585T2 DE 3789585 T2 DE3789585 T2 DE 3789585T2 DE 3789585 T DE3789585 T DE 3789585T DE 3789585 T DE3789585 T DE 3789585T DE 3789585 T2 DE3789585 T2 DE 3789585T2
- Authority
- DE
- Germany
- Prior art keywords
- organic structure
- leading
- leading organic
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/652—Cyanine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/701—Langmuir Blodgett films
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61213976A JPS6370578A (ja) | 1986-09-12 | 1986-09-12 | 有機光導電媒体およびその製造方法 |
JP61213973A JPS6370517A (ja) | 1986-09-12 | 1986-09-12 | 電極形成方法 |
JP61213975A JPH0638415B2 (ja) | 1986-09-12 | 1986-09-12 | 有機導電媒体およびその製造方法 |
JP61213974A JPS6370543A (ja) | 1986-09-12 | 1986-09-12 | 有機導電層の加工方法 |
JP61213977A JPH0654813B2 (ja) | 1986-09-12 | 1986-09-12 | 有機光導電デバイスおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3789585D1 DE3789585D1 (de) | 1994-05-19 |
DE3789585T2 true DE3789585T2 (de) | 1994-08-11 |
Family
ID=27529565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3789585T Expired - Lifetime DE3789585T2 (de) | 1986-09-12 | 1987-09-11 | Leitende organische Struktur. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4929524A (de) |
EP (1) | EP0260152B1 (de) |
DE (1) | DE3789585T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01207756A (ja) * | 1988-02-16 | 1989-08-21 | Fuji Electric Co Ltd | 電子写真用感光体の製造方法 |
US5075738A (en) * | 1988-03-28 | 1991-12-24 | Canon Kabushiki Kaisha | Switching device and method of preparing it |
US5231523A (en) * | 1988-08-03 | 1993-07-27 | Tdk Corporation | Liquid crystal elements and conductive organic compound film-forming compositions |
DE68926602T2 (de) * | 1988-10-04 | 1996-10-24 | Canon Kk | Gerät und Verfahren zur Aufzeichnung und Wiedergabe und Aufzeichnungsmedium für das Aufzeichungs- und Wiedergabeverfahren |
JPH07103190B2 (ja) * | 1989-02-15 | 1995-11-08 | 松下電器産業株式会社 | 有機導電性薄膜とその製造方法 |
US5260115A (en) * | 1989-02-15 | 1993-11-09 | Matsushita Electric Industrial Co., Ltd. | Organic electro-conductive thin films and process for production thereof |
US5241527A (en) * | 1989-03-16 | 1993-08-31 | Canon Kabushiki Kaisha | Recording and reproducing apparatus and method using a recording layer having a positioning region |
JP2815176B2 (ja) * | 1989-06-08 | 1998-10-27 | ティーディーケイ株式会社 | スライダ,ヘッド及び記録再生装置 |
JP2637823B2 (ja) * | 1989-06-08 | 1997-08-06 | ティーディーケイ株式会社 | 磁気ヘッド |
DE69127381T2 (de) * | 1990-01-19 | 1998-01-22 | Canon Kk | Informationsverarbeitungssystem und Informationsverarbeitungsmethode |
JPH0444362A (ja) * | 1990-06-12 | 1992-02-14 | Nec Corp | 有機量子半導体及び量子半導体素子 |
US5327373A (en) * | 1992-08-21 | 1994-07-05 | Board Of Regents, The University Of Texas System | Optoelectronic memories with photoconductive thin films |
US5521678A (en) * | 1993-12-21 | 1996-05-28 | Xerox Corporation | Electrostatographic imaging drum having a periphery flush with periphery of an end cap |
US5576803A (en) * | 1993-12-21 | 1996-11-19 | Xerox Corporation | Electrostatographic imaging drum end cap and drum assembly |
DE19837019C2 (de) * | 1998-08-14 | 2001-05-23 | Forschungszentrum Juelich Gmbh | Solarzelle mit gestapelten Molekülen, Verfahren zu deren Herstellung und zu deren Betrieb |
US20100291706A1 (en) * | 2009-05-15 | 2010-11-18 | Millipore Corporation | Dye conjugates and methods of use |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2599542A (en) * | 1948-03-23 | 1952-06-10 | Chester F Carlson | Electrophotographic plate |
US4510089A (en) * | 1981-06-12 | 1985-04-09 | Matsushita Electric Industrial Company, Limited | Octahydrotetracyanoquinodimethane and derivatives thereof |
DE3277759D1 (en) * | 1981-09-18 | 1988-01-07 | Fujitsu Ltd | Semiconductor device having new conductive interconnection structure and method for manufacturing the same |
JPS58107646A (ja) * | 1981-12-21 | 1983-06-27 | Nippon Telegr & Teleph Corp <Ntt> | 高分子半導体電界効果トランジスタの集積化方法 |
DE3204221A1 (de) * | 1982-02-08 | 1983-08-18 | Hoechst Ag, 6230 Frankfurt | Elektrophotographisches aufzeichnungsverfahren und hierfuer geeignete photoleiterschicht |
JPS58162975A (ja) * | 1982-03-24 | 1983-09-27 | Canon Inc | 電子写真感光体 |
CA1225139A (en) * | 1982-09-17 | 1987-08-04 | J. Thomas Tiedje | Optical absorption enhancement in amorphous silicon deposited on rough substrate |
JPS5958436A (ja) * | 1982-09-29 | 1984-04-04 | Shindengen Electric Mfg Co Ltd | 電子写真用感光体 |
JPS59152673A (ja) * | 1983-02-19 | 1984-08-31 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
JPH0680837B2 (ja) * | 1983-08-29 | 1994-10-12 | 通商産業省工業技術院長 | 光路を延長した光電変換素子 |
JPS60120361A (ja) * | 1983-12-05 | 1985-06-27 | Canon Inc | 感光体 |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
JPS60173842A (ja) * | 1984-02-20 | 1985-09-07 | Canon Inc | パタ−ン形成方法 |
US4696884A (en) * | 1984-02-27 | 1987-09-29 | Canon Kabushiki Kaisha | Member having photosensitive layer with series of smoothly continuous non-parallel interfaces |
JPS60189753A (ja) * | 1984-03-12 | 1985-09-27 | Toshiba Corp | 電子写真感光体 |
FR2564231B1 (fr) * | 1984-05-10 | 1986-09-05 | Commissariat Energie Atomique | Films conducteurs de l'electricite comprenant au moins une couche monomoleculaire d'un complexe organique a transfert de charge et leur procede de fabrication |
JPS61108176A (ja) * | 1984-11-01 | 1986-05-26 | Fuji Electric Co Ltd | 粗面化方法 |
JPS61231561A (ja) * | 1985-04-06 | 1986-10-15 | Canon Inc | 光導電部材用の支持体及び該支持体を有する光導電部材 |
-
1987
- 1987-09-10 US US07/099,345 patent/US4929524A/en not_active Expired - Lifetime
- 1987-09-11 EP EP87308072A patent/EP0260152B1/de not_active Expired - Lifetime
- 1987-09-11 DE DE3789585T patent/DE3789585T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0260152A3 (en) | 1989-07-19 |
US4929524A (en) | 1990-05-29 |
DE3789585D1 (de) | 1994-05-19 |
EP0260152A2 (de) | 1988-03-16 |
EP0260152B1 (de) | 1994-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |