DE3850009T2 - Halbleiterlaser mit verteiltem Bragg-Reflektor und Verfahren zu seiner Herstellung. - Google Patents

Halbleiterlaser mit verteiltem Bragg-Reflektor und Verfahren zu seiner Herstellung.

Info

Publication number
DE3850009T2
DE3850009T2 DE3850009T DE3850009T DE3850009T2 DE 3850009 T2 DE3850009 T2 DE 3850009T2 DE 3850009 T DE3850009 T DE 3850009T DE 3850009 T DE3850009 T DE 3850009T DE 3850009 T2 DE3850009 T2 DE 3850009T2
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor laser
bragg reflector
distributed bragg
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850009T
Other languages
English (en)
Other versions
DE3850009D1 (de
Inventor
Hideaki Nishizawa
Mitsuo Takahashi
Yasuharu Suematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Sumitomo Electric Industries Ltd
Tokyo Institute of Technology NUC
Original Assignee
Research Development Corp of Japan
Sumitomo Electric Industries Ltd
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan, Sumitomo Electric Industries Ltd, Tokyo Institute of Technology NUC filed Critical Research Development Corp of Japan
Application granted granted Critical
Publication of DE3850009D1 publication Critical patent/DE3850009D1/de
Publication of DE3850009T2 publication Critical patent/DE3850009T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
DE3850009T 1987-09-01 1988-08-31 Halbleiterlaser mit verteiltem Bragg-Reflektor und Verfahren zu seiner Herstellung. Expired - Fee Related DE3850009T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62218461A JPS6461081A (en) 1987-09-01 1987-09-01 Distributed-feedback type semiconductor laser and manufacture thereof

Publications (2)

Publication Number Publication Date
DE3850009D1 DE3850009D1 (de) 1994-07-14
DE3850009T2 true DE3850009T2 (de) 1995-01-05

Family

ID=16720266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850009T Expired - Fee Related DE3850009T2 (de) 1987-09-01 1988-08-31 Halbleiterlaser mit verteiltem Bragg-Reflektor und Verfahren zu seiner Herstellung.

Country Status (4)

Country Link
US (2) US4914670A (de)
EP (1) EP0305990B1 (de)
JP (1) JPS6461081A (de)
DE (1) DE3850009T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
FR2675308A1 (fr) * 1991-04-12 1992-10-16 Thomson Csf Procede de realisation de dispositifs optoelectroniques a semiconducteurs.
US5877038A (en) * 1996-11-27 1999-03-02 The Regents Of The University Of California Method of making a vertical cavity laser
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
WO2002017448A1 (en) 2000-08-22 2002-02-28 Regents Of The University Of California, The Distributed bragg reflectors incorporating sb material for long-wavelength vertical cavity surface emitting lasers
US6631154B2 (en) 2000-08-22 2003-10-07 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
US6603498B1 (en) * 2000-11-28 2003-08-05 Coherent, Inc. Printer head with linear array of individually addressable diode-lasers
US20030021314A1 (en) * 2001-07-27 2003-01-30 The Furukawa Electric Co, Ltd. Distributed bragg reflector semiconductor laser suitable for use in an optical amplifier
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US20040001521A1 (en) * 2002-06-27 2004-01-01 Ashish Tandon Laser having active region formed above substrate
KR100527108B1 (ko) * 2003-11-28 2005-11-09 한국전자통신연구원 반도체 광소자의 제작 방법
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
DE102012214971A1 (de) * 2012-08-23 2014-02-27 Trumpf Laser Gmbh + Co. Kg Festkörperlaseranordnung und Verfahren zu deren Herstellung

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996528A (en) * 1975-12-31 1976-12-07 International Business Machines Corporation Folded cavity injection laser
US4297651A (en) * 1979-08-23 1981-10-27 Northern Telecom Limited Methods for simultaneous suppression of laser pulsations and continuous monitoring of output power
JPS56111284A (en) * 1980-02-07 1981-09-02 Nec Corp Manufacture of semiconductor laser
JPS5743428A (en) * 1980-08-28 1982-03-11 Nec Corp Mesa etching method
JPS5858788A (ja) * 1981-10-05 1983-04-07 Fujitsu Ltd 半導体発光装置の製造方法
JPS58216486A (ja) * 1982-06-10 1983-12-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザおよびその製造方法
GB2138999B (en) * 1983-04-26 1986-11-05 British Telecomm Semiconductor lasers
JPS59227177A (ja) * 1983-06-08 1984-12-20 Hitachi Ltd 半導体レ−ザ装置
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
GB2160823B (en) * 1984-06-28 1987-05-28 Stc Plc Semiconductor devices and their fabrication
JPS61166087A (ja) * 1985-01-17 1986-07-26 Sharp Corp 半導体レ−ザ素子の製造方法
JPS61171190A (ja) * 1985-01-25 1986-08-01 Res Dev Corp Of Japan 分布反射形レ−ザ
GB2175442B (en) * 1985-05-15 1989-05-24 Stc Plc Laser manufacture
JPS6254489A (ja) * 1985-05-15 1987-03-10 Sumitomo Electric Ind Ltd 半導体発光素子
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JPH073901B2 (ja) * 1986-10-30 1995-01-18 日本電信電話株式会社 分布反射型半導体レ−ザ及びその製法

Also Published As

Publication number Publication date
JPH0477477B2 (de) 1992-12-08
US4914670A (en) 1990-04-03
EP0305990A2 (de) 1989-03-08
US5045499A (en) 1991-09-03
EP0305990B1 (de) 1994-06-08
EP0305990A3 (de) 1991-05-02
JPS6461081A (en) 1989-03-08
DE3850009D1 (de) 1994-07-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee