DE3851195T2 - Verfahren für die chemische Dampfabscheidung. - Google Patents

Verfahren für die chemische Dampfabscheidung.

Info

Publication number: DE3851195T2
Authority: DE; Germany
Prior art keywords: vapor deposition; chemical vapor; deposition processes; processes; chemical
Prior art date: 1987-10-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE3851195T

Other languages

English (en)

Other versions

DE3851195D1 (de

Inventor

Takafumi Kimura

Hideki Yamawaki

Kazuto Ikeda

Masaru Ihara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-10-09

Filing date

1988-10-06

Publication date

1994-12-15

1988-10-06 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1994-09-29 Application granted granted Critical

1994-09-29 Publication of DE3851195D1 publication Critical patent/DE3851195D1/de

1994-12-15 Publication of DE3851195T2 publication Critical patent/DE3851195T2/de

2008-10-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0436—Processes for depositing or forming superconductor layers by chemical vapour deposition [CVD]
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating

DE3851195T 1987-10-09 1988-10-06 Verfahren für die chemische Dampfabscheidung. Expired - Fee Related DE3851195T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP25567787		1987-10-09
JP63087629A JPH01212220A (ja)	1987-10-09	1988-04-08	超伝導材料の気相成長方法

Publications (2)

Publication Number	Publication Date
DE3851195D1 DE3851195D1 (de)	1994-09-29
DE3851195T2 true DE3851195T2 (de)	1994-12-15

Family

ID=26428879

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3851195T Expired - Fee Related DE3851195T2 (de)	1987-10-09	1988-10-06	Verfahren für die chemische Dampfabscheidung.

Country Status (4)

Country	Link
US (1)	US4931425A (de)
EP (1)	EP0311401B1 (de)
JP (1)	JPH01212220A (de)
DE (1)	DE3851195T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0325659B1 (de) *	1987-06-16	1993-05-05	Kawasaki Steel Corporation	Komplexverbindungen zur bildung von dünnfilmen aus supraleitenden oxyden und verfahren zur bildung von dünnfilmen aus supraleitenden oxyden
US5185317A (en) *	1988-02-19	1993-02-09	Northwestern University	Method of forming superconducting Tl-Ba-Ca-Cu-O films
JPH01235103A (ja) *	1988-03-15	1989-09-20	Toray Ind Inc	超伝導材
JPH02150040A (ja) *	1988-11-30	1990-06-08	Fujitsu Ltd	気相成長装置
US5198411A (en) *	1988-12-02	1993-03-30	Hewlett-Packard Company	Chemical vapor phase method for forming thin films of high temperature oxide superconductors
US5252548A (en) *	1989-06-09	1993-10-12	Oki Electric Industry Co., Ltd.	Method of forming an oxide superconductor/semiconductor junction
US5108983A (en) *	1989-11-21	1992-04-28	Georgia Tech Research Corporation	Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
EP0450394A3 (de) *	1990-03-20	1991-10-23	Fujitsu Limited	Verfahren und Vorrichtung zur Herstellung von supraleitenden Schichten
US7323581B1 (en)	1990-07-06	2008-01-29	Advanced Technology Materials, Inc.	Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US5453494A (en) *	1990-07-06	1995-09-26	Advanced Technology Materials, Inc.	Metal complex source reagents for MOCVD
US5280012A (en) *	1990-07-06	1994-01-18	Advanced Technology Materials Inc.	Method of forming a superconducting oxide layer by MOCVD
US5204314A (en) *	1990-07-06	1993-04-20	Advanced Technology Materials, Inc.	Method for delivering an involatile reagent in vapor form to a CVD reactor
US5840897A (en) *	1990-07-06	1998-11-24	Advanced Technology Materials, Inc.	Metal complex source reagents for chemical vapor deposition
US5362328A (en) *	1990-07-06	1994-11-08	Advanced Technology Materials, Inc.	Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5225561A (en) *	1990-07-06	1993-07-06	Advanced Technology Materials, Inc.	Source reagent compounds for MOCVD of refractory films containing group IIA elements
CA2053549A1 (en) *	1990-11-15	1992-05-16	John A. Agostinelli	Construction of high temperature josephson junction device
US5858465A (en) *	1993-03-24	1999-01-12	Georgia Tech Research Corporation	Combustion chemical vapor deposition of phosphate films and coatings
DE69432175T2 (de) *	1993-03-24	2004-03-04	Georgia Tech Research Corp.	Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen
US6689422B1 (en) *	1994-02-16	2004-02-10	Howmet Research Corporation	CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating
US5989733A (en)	1996-07-23	1999-11-23	Howmet Research Corporation	Active element modified platinum aluminide diffusion coating and CVD coating method
RU2232448C2 (ru)	1997-06-18	2004-07-10	Массачусетс Инститьют Оф Текнолоджи	Способ получения пленки оксидного сверхпроводника и оксидное сверхпроводниковое изделие
US6214473B1 (en)	1998-05-13	2001-04-10	Andrew Tye Hunt	Corrosion-resistant multilayer coatings
US20030130129A1 (en) *	2001-07-13	2003-07-10	Massachusetts Institute Of Technology	Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing
US10233541B2 (en) *	2012-06-29	2019-03-19	Applied Materials, Inc.	Deposition of films containing alkaline earth metals
CN104947084A (zh) *	2015-07-09	2015-09-30	成都点石创想科技有限公司	一种在导电金属基底上制备超导材料的方法
US20230002906A1 (en) *	2021-07-01	2023-01-05	Mellanox Technologies, Ltd.	Continuous-feed chemical vapor deposition system
US11963309B2 (en)	2021-05-18	2024-04-16	Mellanox Technologies, Ltd.	Process for laminating conductive-lubricant coated metals for printed circuit boards

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3982049A (en) *	1969-06-16	1976-09-21	Rockwell International Corporation	Method for producing single crystal films
DE3440590A1 (de) *	1984-11-07	1986-05-07	BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau	Verfahren zur herstellung von supraleitenden faserbuendeln
JPS63225528A (ja) *	1987-03-13	1988-09-20	Toa Nenryo Kogyo Kk	超伝導性複合酸化物の製造方法
JPH0753638B2 (ja) *	1987-03-30	1995-06-07	住友電気工業株式会社	超電導薄膜の形成方法
JPS63274027A (ja) *	1987-05-01	1988-11-11	Sumitomo Electric Ind Ltd	超電導材料の製造方法

1988
- 1988-04-08 JP JP63087629A patent/JPH01212220A/ja active Pending
- 1988-09-27 US US07/249,653 patent/US4931425A/en not_active Expired - Lifetime
- 1988-10-06 EP EP88309324A patent/EP0311401B1/de not_active Expired - Lifetime
- 1988-10-06 DE DE3851195T patent/DE3851195T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0311401A3 (en)	1990-12-05
US4931425A (en)	1990-06-05
DE3851195D1 (de)	1994-09-29
EP0311401A2 (de)	1989-04-12
JPH01212220A (ja)	1989-08-25
EP0311401B1 (de)	1994-08-24

Legal Events

Date	Code	Title	Description
1995-09-21	8364	No opposition during term of opposition
2005-08-18	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3851195T2 (de)	1994-12-15	Verfahren für die chemische Dampfabscheidung.
DE3883236T2 (de)	1994-01-20	Chemische Umwandlungsverfahren.
DE3861471D1 (de)	1991-02-14	Beschichtungsverfahren.
DE69002442T2 (de)	1995-07-13	Biozide verfahren für im kreislauf geführte wässrige systeme.
DE3778749D1 (de)	1992-06-11	Einstufiges verfahren zur inertgas-reinigung.
DE3873936D1 (de)	1992-10-01	Lipoxygenasehemmende verbindungen.
NO883787D0 (no)	1988-08-24	Flertrinns opprenskningsprosess.
DE69001292T2 (de)	1993-10-28	Ueberzugsverfahren.
FI920212A (fi)	1992-07-18	Kemisk process.
DE68902652T2 (de)	1993-02-04	Chemisches verfahren.
DE3774704D1 (de)	1992-01-02	Beschichtungsverfahren.
DE69017810D1 (de)	1995-04-20	Vorrichtung zur chemischen Dampfphasenabscheidung.
DE306628T1 (de)	1991-11-28	Entlackungsverfahren.
DE3784918D1 (de)	1993-04-22	Homologierungsverfahren.
FI841009A (fi)	1984-09-17	Kemisk process.
DE3783325D1 (de)	1993-02-11	Lackierverfahren.
ATE94537T1 (de)	1993-10-15	Arylpiperazinylalkylenphenylheterocyclische verbindungen.
DE69010030T2 (de)	1994-11-24	Verfahren zur Produktion von Fruktose-1,6-diphosphat.
NO875365D0 (no)	1987-12-21	Kjemisk gjenvinningsprosess.
FI882218A0 (fi)	1988-05-11	Process foer att avlaegsna tungmetallfoeroreningar fraon avfallsvatten.
DE3861759D1 (de)	1991-03-14	Katalytisches hydroentparaffinierungsverfahren.
MX9102811A (es)	1992-06-01	Proceso para la hidrogenolisis catalitica de un compuesto ciclico o aciclico.
DE3887603T2 (de)	1994-05-26	Chemisches Verfahren.
DE3786187D1 (de)	1993-07-22	Chemische verbindung.
DE3861252D1 (de)	1991-01-24	Antihypercholesterinaemische verbindungen.