DE3852833D1 - Nichtflüchtiger Speicher. - Google Patents

Nichtflüchtiger Speicher.

Info

Publication number
DE3852833D1
DE3852833D1 DE3852833T DE3852833T DE3852833D1 DE 3852833 D1 DE3852833 D1 DE 3852833D1 DE 3852833 T DE3852833 T DE 3852833T DE 3852833 T DE3852833 T DE 3852833T DE 3852833 D1 DE3852833 D1 DE 3852833D1
Authority
DE
Germany
Prior art keywords
volatile memory
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852833T
Other languages
English (en)
Other versions
DE3852833T2 (de
Inventor
Naoki Mitsuishi
Yoh No Takamori
Kiyoshi Matsubara
Yoshiyuki Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5880887A external-priority patent/JP2833621B2/ja
Priority claimed from JP62139402A external-priority patent/JPS63303447A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3852833D1 publication Critical patent/DE3852833D1/de
Application granted granted Critical
Publication of DE3852833T2 publication Critical patent/DE3852833T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14—Protection against unauthorised use of memory or access to memory
    • G06F12/1416—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights
    • G06F12/1425—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights the protection being physical, e.g. cell, word, block
    • G06F12/1433—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights the protection being physical, e.g. cell, word, block for a module or a part of a module
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
DE3852833T 1987-03-16 1988-03-15 Nichtflüchtiger Speicher. Expired - Fee Related DE3852833T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5880887A JP2833621B2 (ja) 1987-03-16 1987-03-16 不揮発性記憶装置
JP62139402A JPS63303447A (ja) 1987-06-03 1987-06-03 半導体集積回路装置

Publications (2)

Publication Number Publication Date
DE3852833D1 true DE3852833D1 (de) 1995-03-09
DE3852833T2 DE3852833T2 (de) 1995-06-22

Family

ID=26399812

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3852833T Expired - Fee Related DE3852833T2 (de) 1987-03-16 1988-03-15 Nichtflüchtiger Speicher.
DE3856216T Expired - Fee Related DE3856216T2 (de) 1987-03-16 1988-03-15 Nicht-Flüchtiger Speicher

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3856216T Expired - Fee Related DE3856216T2 (de) 1987-03-16 1988-03-15 Nicht-Flüchtiger Speicher

Country Status (5)

Country Link
US (2) US4931997A (de)
EP (2) EP0283238B1 (de)
KR (1) KR950014560B1 (de)
DE (2) DE3852833T2 (de)
HK (1) HK28396A (de)

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US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
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JPH03232196A (ja) * 1990-02-07 1991-10-16 Toshiba Corp 半導体記憶装置
JP3099887B2 (ja) * 1990-04-12 2000-10-16 株式会社東芝 不揮発性半導体記憶装置
JPH04123471A (ja) * 1990-09-14 1992-04-23 Oki Electric Ind Co Ltd 半導体記憶装置のデータ書込みおよび消去方法
EP0477985A2 (de) * 1990-09-27 1992-04-01 Oki Electric Industry Co., Ltd. Halbleiterspeicherschaltung
JPH04141794A (ja) * 1990-10-03 1992-05-15 Mitsubishi Electric Corp Ｉｃカード
JP2724046B2 (ja) * 1991-02-07 1998-03-09 富士写真フイルム株式会社 Ｉｃメモリカードシステム
US5546561A (en) * 1991-02-11 1996-08-13 Intel Corporation Circuitry and method for selectively protecting the integrity of data stored within a range of addresses within a non-volatile semiconductor memory
US5309402A (en) * 1991-02-15 1994-05-03 Nec Corporation Flash electrically erasable and programmable ROM
JP2837970B2 (ja) * 1991-04-12 1998-12-16 三菱電機株式会社 Ｉｃカード
US5197034A (en) * 1991-05-10 1993-03-23 Intel Corporation Floating gate non-volatile memory with deep power down and write lock-out
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
WO1993010498A1 (en) * 1991-11-12 1993-05-27 Microchip Technology Inc. Security for on-chip microcontroller memory
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TW231343B (de) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
US5557572A (en) * 1992-04-24 1996-09-17 Nippon Steel Corporation Non-volatile semiconductor memory device
US5473753A (en) * 1992-10-30 1995-12-05 Intel Corporation Method of managing defects in flash disk memories
DE4242579C2 (de) * 1992-12-16 1997-08-21 Siemens Ag Verfahren zur Echtheitserkennung von Datenträgern
US5345413A (en) * 1993-04-01 1994-09-06 Microchip Technology Incorporated Default fuse condition for memory device after final test
US5363334A (en) * 1993-04-10 1994-11-08 Microchip Technology Incorporated Write protection security for memory device
KR0156590B1 (ko) * 1993-05-11 1998-12-01 미요시 순키치 비소멸성 메모리장치, 비소멸성 메모리셀 및 다수의 트랜지스터의 각각과 비소멸성 메모리셀의 스레솔드값의 조절방법
US5513136A (en) * 1993-09-27 1996-04-30 Intel Corporation Nonvolatile memory with blocks and circuitry for selectively protecting the blocks for memory operations
JP3579461B2 (ja) * 1993-10-15 2004-10-20 株式会社ルネサステクノロジ データ処理システム及びデータ処理装置
JPH07192481A (ja) * 1993-12-27 1995-07-28 Mitsubishi Electric Corp 半導体記憶装置
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5538141A (en) * 1994-09-27 1996-07-23 Intel Corporation Test flow assurance using memory imprinting
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5491657A (en) * 1995-02-24 1996-02-13 Advanced Micro Devices, Inc. Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells
DE19517946C2 (de) * 1995-05-18 2001-02-01 Pepperl & Fuchs Verfahren zum Auffrischen von Daten in nichtflüchtigen Speichern eines Datenträgers innerhalb eines Identifikations-Systems
JPH08329691A (ja) * 1995-05-30 1996-12-13 Nkk Corp 不揮発性半導体記憶装置
US5721877A (en) * 1995-05-31 1998-02-24 Ast Research, Inc. Method and apparatus for limiting access to nonvolatile memory device
JPH0945094A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
JPH0945090A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
JP3268732B2 (ja) * 1996-10-21 2002-03-25 株式会社東芝 不揮発性半導体メモリ
JPH11110293A (ja) * 1997-09-29 1999-04-23 Mitsubishi Electric Corp 不揮発性メモリ制御回路
US6018686A (en) * 1997-10-31 2000-01-25 Cypress Semiconductor Corp. Electrically imprinting a semiconductor die with identifying information
US6154872A (en) 1997-11-20 2000-11-28 Cypress Semiconductor Corporation Method, circuit and apparatus for preserving and/or correcting product engineering information
US6052319A (en) * 1997-12-04 2000-04-18 Cypress Semiconductor Corp. Apparatus and method for controlling experimental inventory
US6148279A (en) 1997-12-04 2000-11-14 Cypress Semiconductor Corporation Apparatus for recording and/or reading program history
JPH11184834A (ja) * 1997-12-25 1999-07-09 Sanyo Electric Co Ltd マイクロコンピュータ
US6181615B1 (en) 1998-03-30 2001-01-30 Cypress Semiconductor Corporation Circuitry, apparatus and method for embedding quantifiable test results within a circuit being tested
US6209110B1 (en) 1998-03-30 2001-03-27 Cypress Semiconductor Corporation Circuitry, apparatus and method for embedding a test status outcome within a circuit being tested
JP3729638B2 (ja) * 1998-04-22 2005-12-21 富士通株式会社 メモリデバイス
DE19819265C1 (de) * 1998-04-30 1999-08-19 Micronas Intermetall Gmbh Verfahren zum Parametrieren einer integrierten Schaltungsanordnung und integrierte Schaltungsanordnung hierfür
US6075727A (en) * 1998-07-29 2000-06-13 Motorola, Inc Method and apparatus for writing an erasable non-volatile memory
US5995417A (en) * 1998-10-20 1999-11-30 Advanced Micro Devices, Inc. Scheme for page erase and erase verify in a non-volatile memory array
US6104638A (en) * 1999-02-26 2000-08-15 Hewlett-Packard Company Use of erasable non-volatile memory for storage of changing information
US6445640B1 (en) * 2001-03-23 2002-09-03 Sun Microsystems, Inc. Method and apparatus for invalidating memory array write operations
US7299203B1 (en) * 2001-04-19 2007-11-20 Xilinx, Inc. Method for storing and shipping programmable ASSP devices
US6532169B1 (en) * 2001-06-26 2003-03-11 Cypress Semiconductor Corp. SONOS latch and application
US6842380B2 (en) * 2002-08-27 2005-01-11 Micron Technology, Inc. Method and apparatus for erasing memory
JP4248359B2 (ja) * 2003-09-30 2009-04-02 三洋電機株式会社 半導体装置およびその試験方法
EP1542130B1 (de) * 2003-12-12 2007-04-11 STMicroelectronics S.A. Serieller Speicher mit Mitteln zur Integration eines erweiterten Speicherfeldes
EP1640844A1 (de) * 2004-09-27 2006-03-29 STMicroelectronics Limited Gesichertes OTP mit externem Speicher
US8997255B2 (en) 2006-07-31 2015-03-31 Inside Secure Verifying data integrity in a data storage device
US8352752B2 (en) * 2006-09-01 2013-01-08 Inside Secure Detecting radiation-based attacks
KR20090055314A (ko) * 2007-11-28 2009-06-02 삼성전자주식회사 읽기 디스터번스를 줄일 수 있는 불휘발성 메모리 장치
US8036032B2 (en) 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
JP2009181624A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 不揮発性半導体記憶装置
WO2011037257A1 (ja) 2009-09-28 2011-03-31 日立ビークルエナジー株式会社 電池システム
KR101015108B1 (ko) * 2010-07-28 2011-02-21 김인휘 무전원 방식의 휴대용 정수기
KR101934433B1 (ko) 2012-05-31 2019-01-02 에스케이하이닉스 주식회사 블럭 보호가 가능한 반도체 장치
KR101991905B1 (ko) 2012-07-19 2019-06-24 삼성전자주식회사 불휘발성 메모리, 불휘발성 메모리의 읽기 방법 및 불휘발성 메모리를 포함하는 메모리 시스템
JP6364365B2 (ja) * 2015-02-25 2018-07-25 株式会社東芝 半導体記憶装置

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Also Published As

Publication number Publication date
KR950014560B1 (ko) 1995-12-05
US5084843A (en) 1992-01-28
US4931997A (en) 1990-06-05
DE3856216T2 (de) 1999-04-08
DE3852833T2 (de) 1995-06-22
EP0579274A3 (en) 1995-09-20
KR890001098A (ko) 1989-03-18
DE3856216D1 (de) 1998-08-13
EP0283238B1 (de) 1995-01-25
HK28396A (en) 1996-02-23
EP0283238A3 (en) 1990-11-28
EP0283238A2 (de) 1988-09-21
EP0579274B1 (de) 1998-07-08
EP0579274A2 (de) 1994-01-19

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