DE3853531T2 - Röntgenlithographiesystem mit dünner Auftrefffläche. - Google Patents

Röntgenlithographiesystem mit dünner Auftrefffläche.

Info

Publication number
DE3853531T2
DE3853531T2 DE3853531T DE3853531T DE3853531T2 DE 3853531 T2 DE3853531 T2 DE 3853531T2 DE 3853531 T DE3853531 T DE 3853531T DE 3853531 T DE3853531 T DE 3853531T DE 3853531 T2 DE3853531 T2 DE 3853531T2
Authority
DE
Germany
Prior art keywords
target
laser beam
angle
incident
focused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853531T
Other languages
English (en)
Other versions
DE3853531D1 (de
Inventor
Robert Frankel
Jerry Drumheller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HAMPSHIRE INSTR Inc
Original Assignee
HAMPSHIRE INSTR Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HAMPSHIRE INSTR Inc filed Critical HAMPSHIRE INSTR Inc
Publication of DE3853531D1 publication Critical patent/DE3853531D1/de
Application granted granted Critical
Publication of DE3853531T2 publication Critical patent/DE3853531T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B1/00—Thermonuclear fusion reactors
    • G21B1/11—Details
    • G21B1/19—Targets for producing thermonuclear fusion reactions, e.g. pellets for irradiation by laser or charged particle beams
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors
DE3853531T 1987-08-25 1988-08-23 Röntgenlithographiesystem mit dünner Auftrefffläche. Expired - Fee Related DE3853531T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/089,496 US4837793A (en) 1987-08-25 1987-08-25 Mass limited target
PCT/US1988/002882 WO1989002154A1 (en) 1987-08-25 1988-08-23 Mass limited target

Publications (2)

Publication Number Publication Date
DE3853531D1 DE3853531D1 (de) 1995-05-11
DE3853531T2 true DE3853531T2 (de) 1995-09-14

Family

ID=22217970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853531T Expired - Fee Related DE3853531T2 (de) 1987-08-25 1988-08-23 Röntgenlithographiesystem mit dünner Auftrefffläche.

Country Status (7)

Country Link
US (1) US4837793A (de)
EP (1) EP0342208B1 (de)
JP (1) JPH02500626A (de)
KR (1) KR940002546B1 (de)
AT (1) ATE120876T1 (de)
DE (1) DE3853531T2 (de)
WO (1) WO1989002154A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2576278B2 (ja) * 1990-08-31 1997-01-29 株式会社島津製作所 Ｘ線発生装置
US5577092A (en) * 1995-01-25 1996-11-19 Kublak; Glenn D. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources
US6975703B2 (en) * 2003-08-01 2005-12-13 General Electric Company Notched transmission target for a multiple focal spot X-ray source
US7583791B2 (en) * 2005-08-16 2009-09-01 General Electric Co. X-ray tube target assembly and method of manufacturing same
CN108615564A (zh) * 2018-05-07 2018-10-02 中国工程物理研究院激光聚变研究中心 一种烧蚀状态下中z元素透射能流的测量靶及测量方法
EP3742469A1 (de) 2018-09-26 2020-11-25 Siemens Healthcare GmbH Röntgenanode, röntgenstrahler und verfahren zur herstellung einer röntgenanode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484339A (en) * 1981-02-09 1984-11-20 Battelle Development Corporation Providing X-rays
US4602378A (en) * 1982-08-19 1986-07-22 General Electric Company X-ray table
US4504964A (en) * 1982-09-20 1985-03-12 Eaton Corporation Laser beam plasma pinch X-ray system
FR2551614B1 (fr) * 1983-09-02 1986-03-21 Centre Nat Rech Scient Source intense de rayons x mous, a compression cylindrique de plasma, ce plasma etant obtenu a partir d'une feuille explosee
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
US4700371A (en) * 1984-11-08 1987-10-13 Hampshire Instruments, Inc. Long life x-ray source target
DE3586244T2 (de) * 1984-12-26 2000-04-20 Toshiba Kawasaki Kk Vorrichtung zur Erzeugung von Weich-Röntgenstrahlen durch ein Hochenergiebündel.

Also Published As

Publication number Publication date
EP0342208A1 (de) 1989-11-23
EP0342208B1 (de) 1995-04-05
KR890702083A (ko) 1989-12-22
KR940002546B1 (ko) 1994-03-25
WO1989002154A1 (en) 1989-03-09
JPH02500626A (ja) 1990-03-01
DE3853531D1 (de) 1995-05-11
ATE120876T1 (de) 1995-04-15
EP0342208A4 (de) 1990-01-08
US4837793A (en) 1989-06-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee