DE3853890D1 - Mit einem Plasma arbeitendes Gerät. - Google Patents

Mit einem Plasma arbeitendes Gerät.

Info

Publication number
DE3853890D1
DE3853890D1 DE3853890T DE3853890T DE3853890D1 DE 3853890 D1 DE3853890 D1 DE 3853890D1 DE 3853890 T DE3853890 T DE 3853890T DE 3853890 T DE3853890 T DE 3853890T DE 3853890 D1 DE3853890 D1 DE 3853890D1
Authority
DE
Germany
Prior art keywords
plasma
device working
working
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853890T
Other languages
English (en)
Other versions
DE3853890T2 (de
Inventor
Takuya Fukuda
Yasuhiro Mochizuki
Naohiro Momma
Shigeru Takahashi
Noboru Suzuki
Tadasi Sonobe
Kiyosi Chiba
Kazuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Service Engineering Co Ltd
Hitachi Engineering and Services Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Service Engineering Co Ltd
Hitachi Engineering and Services Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP806287A external-priority patent/JPH0777202B2/ja
Priority claimed from JP62045259A external-priority patent/JP2544374B2/ja
Priority claimed from JP62050090A external-priority patent/JPS63217620A/ja
Application filed by Hitachi Service Engineering Co Ltd, Hitachi Engineering and Services Co Ltd, Hitachi Ltd filed Critical Hitachi Service Engineering Co Ltd
Publication of DE3853890D1 publication Critical patent/DE3853890D1/de
Application granted granted Critical
Publication of DE3853890T2 publication Critical patent/DE3853890T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
DE3853890T 1987-01-19 1988-01-19 Mit einem Plasma arbeitendes Gerät. Expired - Fee Related DE3853890T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP806287A JPH0777202B2 (ja) 1987-01-19 1987-01-19 プラズマ処理装置
JP62045259A JP2544374B2 (ja) 1987-03-02 1987-03-02 プラズマ処理装置、及びその方法
JP62050090A JPS63217620A (ja) 1987-03-06 1987-03-06 プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE3853890D1 true DE3853890D1 (de) 1995-07-06
DE3853890T2 DE3853890T2 (de) 1995-10-19

Family

ID=27277857

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853890T Expired - Fee Related DE3853890T2 (de) 1987-01-19 1988-01-19 Mit einem Plasma arbeitendes Gerät.

Country Status (4)

Country Link
US (1) US4876983A (de)
EP (1) EP0275965B1 (de)
KR (1) KR960015609B1 (de)
DE (1) DE3853890T2 (de)

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JPH0672306B2 (ja) 1987-04-27 1994-09-14 株式会社半導体エネルギー研究所 プラズマ処理装置およびプラズマ処理方法
ZA884511B (en) * 1987-07-15 1989-03-29 Boc Group Inc Method of plasma enhanced silicon oxide deposition
DE3834984A1 (de) * 1988-10-14 1990-04-19 Leybold Ag Einrichtung zur erzeugung von elektrisch geladenen und/oder ungeladenen teilchen
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
DE3843098A1 (de) * 1988-12-21 1990-06-28 Technics Plasma Gmbh Verfahren und vorrichtung zur kunststoffbeschichtung von strangprofilen
JPH0362517A (ja) * 1989-03-27 1991-03-18 Anelva Corp マイクロ波プラズマ処理装置
FR2647293B1 (fr) * 1989-05-18 1996-06-28 Defitech Sa Reacteur a plasma perfectionne muni de moyens de couplage d'ondes electromagnetiques
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5421891A (en) * 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5091049A (en) * 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
EP0402867B1 (de) * 1989-06-15 1995-03-01 Sel Semiconductor Energy Laboratory Co., Ltd. Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld
US5196670A (en) * 1989-10-03 1993-03-23 University Of Cincinnati Magnetic plasma producing device with adjustable resonance plane
JP2602336B2 (ja) * 1989-11-29 1997-04-23 株式会社日立製作所 プラズマ処理装置
FR2658025A1 (fr) * 1990-02-07 1991-08-09 Pelletier Jacques Procede et dispositif de traitement par plasma de pieces de formes diverses.
US5275972A (en) * 1990-02-19 1994-01-04 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window
JP2546405B2 (ja) * 1990-03-12 1996-10-23 富士電機株式会社 プラズマ処理装置ならびにその運転方法
JP2581255B2 (ja) * 1990-04-02 1997-02-12 富士電機株式会社 プラズマ処理方法
JP3056772B2 (ja) * 1990-08-20 2000-06-26 株式会社日立製作所 プラズマの制御方法ならびにプラズマ処理方法およびその装置
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
JPH04129133A (ja) * 1990-09-20 1992-04-30 Hitachi Ltd イオン源及びプラズマ装置
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
JP2721054B2 (ja) * 1990-10-16 1998-03-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 電子サイクロトロン共鳴装置と基板へのイオンの流れを生成する方法
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US5268208A (en) * 1991-07-01 1993-12-07 Ford Motor Company Plasma enhanced chemical vapor deposition of oxide film stack
JP3042127B2 (ja) * 1991-09-02 2000-05-15 富士電機株式会社 酸化シリコン膜の製造方法および製造装置
US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
US5366586A (en) * 1992-02-03 1994-11-22 Nec Corporation Plasma formation using electron cyclotron resonance and method for processing substrate by using the same
US5361016A (en) * 1992-03-26 1994-11-01 General Atomics High density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube
US5225740A (en) * 1992-03-26 1993-07-06 General Atomics Method and apparatus for producing high density plasma using whistler mode excitation
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
WO1994006150A1 (en) * 1992-09-02 1994-03-17 The University Of North Carolina At Chapel Hill Method for plasma processing at high pressures
JPH06251896A (ja) * 1992-12-28 1994-09-09 Hitachi Ltd プラズマ処理方法及び装置
FR2701797B1 (fr) * 1993-02-18 1995-03-31 Commissariat Energie Atomique Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma .
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
JPH07245193A (ja) * 1994-03-02 1995-09-19 Nissin Electric Co Ltd プラズマ発生装置及びプラズマ処理装置
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
AU1745695A (en) * 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5653851A (en) * 1994-07-05 1997-08-05 Texas Instruments Incorporated Method and apparatus for etching titanate with organic acid reagents
US5972790A (en) * 1995-06-09 1999-10-26 Tokyo Electron Limited Method for forming salicides
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
EP0845287B1 (de) * 1996-11-28 2003-12-17 Accentus plc Verfahren und Vorrichtung zur plasmachemischen Behandlung von Gasen
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
JP2976965B2 (ja) * 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
JP2000208487A (ja) * 1999-01-11 2000-07-28 Speedfam-Ipec Co Ltd 局部エッチング装置及び局部エッチング方法
JP4169854B2 (ja) * 1999-02-12 2008-10-22 スピードファム株式会社 ウエハ平坦化方法
RU2164718C1 (ru) * 2000-07-04 2001-03-27 Общество с ограниченной ответственностью "Агентство маркетинга научных разработок" Установка для формирования наноструктур на поверхности полупроводниковых пластин ионными пучками
US7253901B2 (en) 2002-01-23 2007-08-07 Kla-Tencor Technologies Corporation Laser-based cleaning device for film analysis tool
US6746925B1 (en) * 2003-03-25 2004-06-08 Lsi Logic Corporation High-k dielectric bird's beak optimizations using in-situ O2 plasma oxidation
US20110233049A1 (en) * 2007-08-30 2011-09-29 Koninklijke Philips Electronics N.V. Sputtering system
US9890457B2 (en) * 2008-06-16 2018-02-13 Board Of Trustees Of Michigan State University Microwave plasma reactors
EP2251671B1 (de) 2009-05-13 2017-04-26 SiO2 Medical Products, Inc. Entgasungsverfahren zur Prüfung einer beschichteten Oberfläche
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
CA2887352A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
CN104854257B (zh) 2012-11-01 2018-04-13 Sio2医药产品公司 涂层检查方法
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
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Family Cites Families (5)

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JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
JPH0693447B2 (ja) * 1983-12-23 1994-11-16 株式会社日立製作所 マイクロ波プラズマ処理装置
DE3705666A1 (de) * 1987-02-21 1988-09-01 Leybold Ag Einrichtung zum herstellen eines plasmas und zur behandlung von substraten darin

Also Published As

Publication number Publication date
EP0275965B1 (de) 1995-05-31
KR960015609B1 (ko) 1996-11-18
US4876983A (en) 1989-10-31
EP0275965A3 (en) 1990-04-25
DE3853890T2 (de) 1995-10-19
KR880009541A (ko) 1988-09-15
EP0275965A2 (de) 1988-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee