DE3854143D1 - Bauelement zur photoelektrischen Verwandlung. - Google Patents

Bauelement zur photoelektrischen Verwandlung.

Info

Publication number
DE3854143D1
DE3854143D1 DE3854143T DE3854143T DE3854143D1 DE 3854143 D1 DE3854143 D1 DE 3854143D1 DE 3854143 T DE3854143 T DE 3854143T DE 3854143 T DE3854143 T DE 3854143T DE 3854143 D1 DE3854143 D1 DE 3854143D1
Authority
DE
Germany
Prior art keywords
component
photoelectric transformation
photoelectric
transformation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3854143T
Other languages
English (en)
Other versions
DE3854143T2 (de
Inventor
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3854143D1 publication Critical patent/DE3854143D1/de
Publication of DE3854143T2 publication Critical patent/DE3854143T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0214—Constructional arrangements for removing stray light
DE3854143T 1987-09-11 1988-09-09 Bauelement zur photoelektrischen Verwandlung. Expired - Lifetime DE3854143T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22671087 1987-09-11
JP63221252A JPH01164073A (ja) 1987-09-11 1988-09-06 光電変換装置

Publications (2)

Publication Number Publication Date
DE3854143D1 true DE3854143D1 (de) 1995-08-17
DE3854143T2 DE3854143T2 (de) 1995-11-30

Family

ID=26524186

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854143T Expired - Lifetime DE3854143T2 (de) 1987-09-11 1988-09-09 Bauelement zur photoelektrischen Verwandlung.

Country Status (4)

Country Link
US (1) US5081347A (de)
EP (1) EP0307233B1 (de)
JP (1) JPH01164073A (de)
DE (1) DE3854143T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3118016B2 (ja) * 1990-07-06 2000-12-18 株式会社リコー 画像読み取り装置
JPH04127578A (ja) * 1990-09-19 1992-04-28 Nec Corp 光半導体素子のパッケージ
FR2680245B1 (fr) * 1991-08-06 1994-03-25 Fabrication Instruments Mesure Detecteur photoelectrique a transfert de charges a qualite d'image amelioree.
EP0557891A1 (de) * 1992-02-28 1993-09-01 Kabushiki Kaisha Toshiba Kontaktbildsensor zur Erzeugung von elektrischen Signalen entsprechend einem Bild auf einem Dokument
US5529936A (en) * 1992-09-30 1996-06-25 Lsi Logic Corporation Method of etching a lens for a semiconductor solid state image sensor
US5519205A (en) * 1992-09-30 1996-05-21 Lsi Logic Corporation Color electronic camera including photosensor array having binary diffractive lens elements
US5340978A (en) * 1992-09-30 1994-08-23 Lsi Logic Corporation Image-sensing display panels with LCD display panel and photosensitive element array
KR0137190B1 (ko) * 1992-12-03 1998-04-28 모리시타 요이찌 완전밀착형이미지센서 및 완전밀착형이미지센서유닛
US5734155A (en) * 1995-06-07 1998-03-31 Lsi Logic Corporation Photo-sensitive semiconductor integrated circuit substrate and systems containing the same
JP3507251B2 (ja) 1995-09-01 2004-03-15 キヤノン株式会社 光センサｉｃパッケージおよびその組立方法
JP3719811B2 (ja) * 1997-03-27 2005-11-24 ソマール株式会社 反射防止フィルム
JP3180748B2 (ja) * 1997-12-11 2001-06-25 日本電気株式会社 固体撮像装置
US6169317B1 (en) 1998-02-13 2001-01-02 Canon Kabushiki Kaisha Photoelectric conversion device and image sensor
US6784409B2 (en) 2000-03-28 2004-08-31 Canon Kabushiki Kaisha Electronic device with encapsulant of photo-set resin and production process of same
US6653617B2 (en) 2000-07-03 2003-11-25 Canon Kabushiki Kaisha Photoelectric conversion device
JP2002305261A (ja) * 2001-01-10 2002-10-18 Canon Inc 電子部品及びその製造方法
US6974517B2 (en) * 2001-06-13 2005-12-13 Raytheon Company Lid with window hermetically sealed to frame, and a method of making it
US6745449B2 (en) * 2001-11-06 2004-06-08 Raytheon Company Method and apparatus for making a lid with an optically transmissive window
US6988338B1 (en) 2002-10-10 2006-01-24 Raytheon Company Lid with a thermally protected window
TW200952142A (en) * 2008-06-13 2009-12-16 Phoenix Prec Technology Corp Package substrate having embedded semiconductor chip and fabrication method thereof
JP5948007B2 (ja) * 2010-03-29 2016-07-06 セイコーエプソン株式会社 分光センサー及び分光フィルター
JP6039962B2 (ja) * 2012-08-01 2016-12-07 日本板硝子株式会社 光電変換装置用カバーガラス
JP2014110264A (ja) * 2012-11-30 2014-06-12 Toppan Printing Co Ltd 固体撮像装置
EP2814064B1 (de) * 2013-06-10 2020-11-25 Nxp B.V. Integrierte Sensorchipgehäuse mit direktionalem Lichtsensor, Vorrichtung mit einem solchen Gehäuse und Verfahren zur Herstellung eines solchen integrierten Sensorchipgehäuses
JP6310312B2 (ja) * 2014-04-18 2018-04-11 キヤノン株式会社 光電変換素子およびその製造方法
MX2021010054A (es) * 2019-02-20 2021-09-21 Saint Gobain Cristal compuesto con un detector de luz integrado.
EP4213219A1 (de) * 2022-01-18 2023-07-19 First Sensor AG Lichtempfindliches element und optoelektronisches bauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763372A (en) * 1967-07-13 1973-10-02 Inventors & Investors Inc Zone plate optics monolithically integrated with photoelectric elements
JPS5598875A (en) * 1979-01-05 1980-07-28 Hitachi Ltd Semiconductor device with photocell
JPS55146967A (en) * 1979-05-02 1980-11-15 Hitachi Ltd Semiconductor ic device
JPS5624969A (en) * 1979-08-09 1981-03-10 Canon Inc Semiconductor integrated circuit element
JPS57132155A (en) * 1981-02-09 1982-08-16 Canon Inc Photoelectric transducer
JPS58168017A (ja) * 1982-03-29 1983-10-04 Mitsubishi Electric Corp 固体撮像素子
JPS6047561A (ja) * 1983-08-25 1985-03-14 Matsushita Graphic Commun Syst Inc 画像読取装置
JPS61220460A (ja) * 1985-03-27 1986-09-30 Matsushita Electric Ind Co Ltd 半導体装置
JPS6175562A (ja) * 1985-08-28 1986-04-17 Sony Corp 固体撮像素子
JPS62201325A (ja) * 1986-02-07 1987-09-05 Fujitsu Ltd 赤外線検知器
JPS62256479A (ja) * 1986-04-30 1987-11-09 Matsushita Electric Ind Co Ltd 光電変換装置
JPH0716016B2 (ja) * 1986-05-19 1995-02-22 富士通株式会社 赤外線検知素子
DE3617229C2 (de) * 1986-05-22 1997-04-30 Aeg Infrarot Module Gmbh Strahlungsdetektor
US4827118A (en) * 1986-07-10 1989-05-02 Minolta Camera Kabushiki Kaisha Light-sensitive device having color filter and manufacturing method thereof
JPS63240078A (ja) * 1987-03-27 1988-10-05 Mitsubishi Electric Corp 受光型半導体装置

Also Published As

Publication number Publication date
EP0307233B1 (de) 1995-07-12
DE3854143T2 (de) 1995-11-30
US5081347A (en) 1992-01-14
JPH01164073A (ja) 1989-06-28
EP0307233A2 (de) 1989-03-15
EP0307233A3 (en) 1990-03-21

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Legal Events

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