DE3855539T2 - Sublimationsanwachsen von siliziumkarbideinkristallen - Google Patents

Sublimationsanwachsen von siliziumkarbideinkristallen

Info

Publication number
DE3855539T2
DE3855539T2 DE3855539T DE3855539T DE3855539T2 DE 3855539 T2 DE3855539 T2 DE 3855539T2 DE 3855539 T DE3855539 T DE 3855539T DE 3855539 T DE3855539 T DE 3855539T DE 3855539 T2 DE3855539 T2 DE 3855539T2
Authority
DE
Germany
Prior art keywords
silicon carbide
carbide crystals
sublimation growth
sublimation
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3855539T
Other languages
English (en)
Other versions
DE3855539D1 (de
DE3855539T3 (de
Inventor
Robert Davis
Calvin Carter
Charles Hunter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
University of California
Original Assignee
North Carolina State University
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22350170&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3855539(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Publication of DE3855539D1 publication Critical patent/DE3855539D1/de
Publication of DE3855539T2 publication Critical patent/DE3855539T2/de
Application granted granted Critical
Publication of DE3855539T3 publication Critical patent/DE3855539T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0054Processes for devices with an active region comprising only group IV elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/021Continuous process
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/148Silicon carbide
DE3855539T 1987-10-26 1988-10-26 Sublimationsanwachsen von siliziumkarbideinkristallen Expired - Lifetime DE3855539T3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US113565 1987-10-26
US07/113,565 US4866005A (en) 1987-10-26 1987-10-26 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
PCT/US1988/003794 WO1989004055A1 (en) 1987-10-26 1988-10-26 Sublimation growth of silicon carbide single crystals

Publications (3)

Publication Number Publication Date
DE3855539D1 DE3855539D1 (de) 1996-10-17
DE3855539T2 true DE3855539T2 (de) 1997-01-23
DE3855539T3 DE3855539T3 (de) 2005-06-30

Family

ID=22350170

Family Applications (3)

Application Number Title Priority Date Filing Date
DE3855539T Expired - Lifetime DE3855539T3 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von siliziumkarbideinkristallen
DE3856514T Expired - Lifetime DE3856514T2 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von Siliziumkarbideinkristallen
DE1143493T Pending DE1143493T1 (de) 1987-10-26 1988-10-26 Sublimationsanwachse von Siliziumkarbidkristallen

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE3856514T Expired - Lifetime DE3856514T2 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von Siliziumkarbideinkristallen
DE1143493T Pending DE1143493T1 (de) 1987-10-26 1988-10-26 Sublimationsanwachse von Siliziumkarbidkristallen

Country Status (7)

Country Link
US (2) US4866005A (de)
EP (3) EP1143493A3 (de)
JP (2) JP3165685B2 (de)
KR (1) KR970008332B1 (de)
CA (1) CA1331730C (de)
DE (3) DE3855539T3 (de)
WO (1) WO1989004055A1 (de)

Families Citing this family (472)

* Cited by examiner, † Cited by third party
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EP1143493A2 (de) 2001-10-10
EP0389533B1 (de) 1996-09-11
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EP0389533A1 (de) 1990-10-03
KR890702244A (ko) 1989-12-23
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EP0712150B1 (de) 2002-02-06
DE3855539D1 (de) 1996-10-17
DE3856514D1 (de) 2002-03-21
DE1143493T1 (de) 2002-11-28
EP0389533A4 (en) 1992-12-09
CA1331730C (en) 1994-08-30
USRE34861E (en) 1995-02-14
US4866005A (en) 1989-09-12
EP0712150A1 (de) 1996-05-15
JPH03501118A (ja) 1991-03-14
KR970008332B1 (ko) 1997-05-23
JP3165685B2 (ja) 2001-05-14
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EP1143493A3 (de) 2004-01-02
JP2000302600A (ja) 2000-10-31

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