DE3855797D1 - Integrierte Halbleiterschaltung - Google Patents

Integrierte Halbleiterschaltung

Info

Publication number
DE3855797D1
DE3855797D1 DE3855797T DE3855797T DE3855797D1 DE 3855797 D1 DE3855797 D1 DE 3855797D1 DE 3855797 T DE3855797 T DE 3855797T DE 3855797 T DE3855797 T DE 3855797T DE 3855797 D1 DE3855797 D1 DE 3855797D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855797T
Other languages
English (en)
Other versions
DE3855797T2 (de
Inventor
Hiroshi Iwahashi
Hideo Kato
Yuuichi Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62330056A external-priority patent/JPH0661160B2/ja
Priority claimed from JP63252971A external-priority patent/JPH07118195B2/ja
Priority claimed from JP63291969A external-priority patent/JP2530012B2/ja
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3855797D1 publication Critical patent/DE3855797D1/de
Publication of DE3855797T2 publication Critical patent/DE3855797T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H03K5/1534—Transition or edge detectors
DE3855797T 1987-12-28 1988-12-28 Integrierte Halbleiterschaltung Expired - Fee Related DE3855797T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62330056A JPH0661160B2 (ja) 1987-12-28 1987-12-28 半導体集積回路
JP63252971A JPH07118195B2 (ja) 1988-10-07 1988-10-07 半導体集積回路
JP63291969A JP2530012B2 (ja) 1988-11-18 1988-11-18 半導体集積回路

Publications (2)

Publication Number Publication Date
DE3855797D1 true DE3855797D1 (de) 1997-03-27
DE3855797T2 DE3855797T2 (de) 1997-08-14

Family

ID=27334172

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3853814T Expired - Fee Related DE3853814T2 (de) 1987-12-28 1988-12-28 Integrierte Halbleiterschaltung.
DE3855797T Expired - Fee Related DE3855797T2 (de) 1987-12-28 1988-12-28 Integrierte Halbleiterschaltung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3853814T Expired - Fee Related DE3853814T2 (de) 1987-12-28 1988-12-28 Integrierte Halbleiterschaltung.

Country Status (3)

Country Link
US (2) US4959816A (de)
EP (2) EP0624878B1 (de)
DE (2) DE3853814T2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200926A (en) * 1987-12-28 1993-04-06 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4959816A (en) * 1987-12-28 1990-09-25 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JPH0344890A (ja) * 1989-07-12 1991-02-26 Toshiba Corp 半導体記憶装置のデータ出力制御回路
IL96808A (en) 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
JP2530055B2 (ja) * 1990-08-30 1996-09-04 株式会社東芝 半導体集積回路
JP2781651B2 (ja) * 1990-10-15 1998-07-30 日本電気アイシーマイコンシステム株式会社 Ｉｃメモリ回路
TW198135B (de) * 1990-11-20 1993-01-11 Oki Electric Ind Co Ltd
JP3100622B2 (ja) * 1990-11-20 2000-10-16 沖電気工業株式会社 同期型ダイナミックｒａｍ
EP0558079B1 (de) * 1992-02-28 1998-04-15 Sony Corporation Halbleiterspeicheranordnung mit einer Adressübergangsabfühlschaltung
US5272674A (en) * 1992-09-21 1993-12-21 Atmel Corporation High speed memory sense amplifier with noise reduction
JP3307009B2 (ja) * 1993-07-21 2002-07-24 富士通株式会社 半導体記憶装置
AU7981094A (en) * 1993-11-09 1995-05-29 Motorola, Inc. Circuit and method for generating a delayed output signal
KR950014086B1 (ko) * 1993-11-11 1995-11-21 현대전자산업주식회사 반도체 메모리 소자의 데이타 출력장치
EP0678870B1 (de) * 1994-02-18 1999-07-28 STMicroelectronics S.r.l. Verfahren und Schaltung zum Unterdrücken von Datenladerauschen in nichtflüchtigen Speichern
DE69421266T2 (de) * 1994-02-18 2000-05-18 St Microelectronics Srl Lesetaktsteuerungsverfahren und Schaltung für nichtflüchtige Speicher
DE69419403T2 (de) * 1994-02-18 1999-12-30 St Microelectronics Srl Verfahren und Schaltung für Ladetaktsteuerung für nichflüchtige Speicherausgabedaten
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5524096A (en) * 1995-06-29 1996-06-04 Micron Quantum Devices, Inc. Circuit for generating a delayed standby signal in response to an external standby command
JPH09153288A (ja) * 1995-11-30 1997-06-10 Mitsubishi Electric Corp 半導体記憶装置
JP3087653B2 (ja) * 1996-05-24 2000-09-11 日本電気株式会社 半導体記憶装置
DE69626815T2 (de) * 1996-09-19 2003-12-11 St Microelectronics Srl Steuerschaltung für Ausgangspuffer, insbesondere für eine nichtflüchtige Speicheranordnung
KR100260358B1 (ko) * 1996-12-30 2000-07-01 김영환 반도체 메모리소자의 출력버퍼회로
JP3903588B2 (ja) * 1997-07-31 2007-04-11 ソニー株式会社 信号変化検出回路
US6009041A (en) * 1998-02-26 1999-12-28 Sgs-Thomson Microelectronics S.R.L. Method and circuit for trimming the internal timing conditions of a semiconductor memory device
US6285216B1 (en) * 1998-12-17 2001-09-04 United Microelectronics Corporation High speed output enable path and method for an integrated circuit device
EP1014547A3 (de) 1998-12-21 2000-11-15 Fairchild Semiconductor Corporation Ladungspumpesystem für niedrigen Strom
US20030112665A1 (en) * 2001-12-17 2003-06-19 Nec Electronics Corporation Semiconductor memory device, data processor, and method of determining frequency
EP1790099A4 (de) * 2004-08-30 2008-04-09 Thunder Creative Technologies Speicherschnittstelle mit verbesserter timing-reserve
US7184328B2 (en) 2004-10-18 2007-02-27 Infineon Technologies Ag DQS for data from a memory array
US7149128B2 (en) * 2004-11-16 2006-12-12 Realtek Semiconductor Corp. Data latch
JP2006351108A (ja) * 2005-06-16 2006-12-28 Oki Electric Ind Co Ltd 半導体記憶装置
US8445828B2 (en) 2010-07-01 2013-05-21 Silicon Optronics, Inc. High dynamic range image sensor with in pixel memory
US8526266B2 (en) * 2011-01-21 2013-09-03 Qualcomm Incorporated Row-decoder circuit and method with dual power systems
JP6116159B2 (ja) * 2012-08-27 2017-04-19 キヤノン株式会社 スリップリング、スリップリング電気システム、及びロボット
US9654714B2 (en) 2013-11-01 2017-05-16 Silicon Optronics, Inc. Shared pixel with fixed conversion gain
JP2015170203A (ja) * 2014-03-07 2015-09-28 富士通株式会社 検証方法、検証プログラムおよび検証装置
US10193555B1 (en) * 2016-06-29 2019-01-29 Cadence Design Systems, Inc. Methods and devices for a memory interface receiver
WO2023287744A1 (en) * 2021-07-13 2023-01-19 Edward Stoneham Delay-adjusted digital-unit interface

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169383A (ja) * 1982-03-30 1983-10-05 Fujitsu Ltd 半導体記憶装置
JPS59181829A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体素子の出力バツフア回路
JPS60253091A (ja) * 1984-05-30 1985-12-13 Fujitsu Ltd 半導体記憶装置
JPS60254485A (ja) * 1984-05-31 1985-12-16 Nec Corp スタテイツク型半導体記憶装置
JPS6124091A (ja) * 1984-07-12 1986-02-01 Nec Corp メモリ回路
JPS6381551A (ja) * 1986-09-25 1988-04-12 Sony Corp メモリ装置
US4959816A (en) * 1987-12-28 1990-09-25 Kabushiki Kaisha Toshiba Semiconductor integrated circuit

Also Published As

Publication number Publication date
US4959816A (en) 1990-09-25
EP0624878B1 (de) 1997-02-12
US5056064A (en) 1991-10-08
EP0322901A3 (de) 1991-03-20
EP0624878A3 (de) 1995-02-15
DE3853814T2 (de) 1995-11-30
DE3853814D1 (de) 1995-06-22
EP0624878A2 (de) 1994-11-17
DE3855797T2 (de) 1997-08-14
EP0322901B1 (de) 1995-05-17
EP0322901A2 (de) 1989-07-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee