DE3855871T2 - Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen - Google Patents
Vorrichtung zur Durchführung einer Wärmebehandlung an HalbleiterplättchenInfo
- Publication number
- DE3855871T2 DE3855871T2 DE3855871T DE3855871T DE3855871T2 DE 3855871 T2 DE3855871 T2 DE 3855871T2 DE 3855871 T DE3855871 T DE 3855871T DE 3855871 T DE3855871 T DE 3855871T DE 3855871 T2 DE3855871 T2 DE 3855871T2
- Authority
- DE
- Germany
- Prior art keywords
- carrying
- heat treatment
- semiconductor wafers
- wafers
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
- Y10S414/138—Wafers positioned vertically within cassette
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62226389A JPH0744159B2 (ja) | 1987-09-11 | 1987-09-11 | 半導体ウエハの熱処理装置および熱処理方法 |
| JP63188477A JPH0239525A (ja) | 1988-07-29 | 1988-07-29 | 半導体熱処理装置 |
| JP63221859A JPH088220B2 (ja) | 1988-09-05 | 1988-09-05 | 半導体ウェハの熱処理装置、及び熱処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3855871D1 DE3855871D1 (de) | 1997-05-22 |
| DE3855871T2 true DE3855871T2 (de) | 1997-10-16 |
Family
ID=27326044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3855871T Expired - Fee Related DE3855871T2 (de) | 1987-09-11 | 1988-09-09 | Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5001327A (de) |
| EP (1) | EP0306967B1 (de) |
| DE (1) | DE3855871T2 (de) |
Families Citing this family (86)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151871A (en) * | 1989-06-16 | 1992-09-29 | Tokyo Electron Limited | Method for heat-processing semiconductor device and apparatus for the same |
| US5128515A (en) * | 1990-05-21 | 1992-07-07 | Tokyo Electron Sagami Limited | Heating apparatus |
| US5252807A (en) * | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
| US5324920A (en) * | 1990-10-18 | 1994-06-28 | Tokyo Electron Sagami Limited | Heat treatment apparatus |
| JP2998903B2 (ja) * | 1990-11-14 | 2000-01-17 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
| IT226255Z2 (it) * | 1992-02-18 | 1997-06-02 | Miralfin Srl | Struttura di radiatore particolarmente per il riscaldamento di locali |
| DE4206374C2 (de) * | 1992-02-29 | 2000-11-02 | Vishay Semiconductor Gmbh | Verfahren und Vorrichtungen zur Epitaxie |
| US5461214A (en) * | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
| US5449883A (en) * | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
| US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
| JP3292540B2 (ja) * | 1993-03-03 | 2002-06-17 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5571010A (en) * | 1993-06-18 | 1996-11-05 | Tokyo Electron Kabushiki Kaisha | Heat treatment method and apparatus |
| KR100297282B1 (ko) * | 1993-08-11 | 2001-10-24 | 마쓰바 구니유키 | 열처리장치 및 열처리방법 |
| DE4407377C2 (de) * | 1994-03-05 | 1996-09-26 | Ast Elektronik Gmbh | Reaktionskammer eines Schnellheizsystems für die Kurzzeittemperung von Halbleiterscheiben und Verfahren zum Spülen der Reaktionskammer |
| US5474649A (en) * | 1994-03-08 | 1995-12-12 | Applied Materials, Inc. | Plasma processing apparatus employing a textured focus ring |
| US5468934A (en) * | 1994-06-15 | 1995-11-21 | General Electric Company | Apparatus for annealing diamond water jet mixing tubes |
| JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
| US6002109A (en) * | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US6133550A (en) * | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
| US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US6198074B1 (en) | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
| US5994675A (en) * | 1997-03-07 | 1999-11-30 | Semitool, Inc. | Semiconductor processing furnace heating control system |
| US6432203B1 (en) * | 1997-03-17 | 2002-08-13 | Applied Komatsu Technology, Inc. | Heated and cooled vacuum chamber shield |
| US5900177A (en) * | 1997-06-11 | 1999-05-04 | Eaton Corporation | Furnace sidewall temperature control system |
| US5948300A (en) * | 1997-09-12 | 1999-09-07 | Kokusai Bti Corporation | Process tube with in-situ gas preheating |
| US6235634B1 (en) | 1997-10-08 | 2001-05-22 | Applied Komatsu Technology, Inc. | Modular substrate processing system |
| US6688375B1 (en) | 1997-10-14 | 2004-02-10 | Applied Materials, Inc. | Vacuum processing system having improved substrate heating and cooling |
| EP2099061A3 (de) * | 1997-11-28 | 2013-06-12 | Mattson Technology, Inc. | Verfahren und Anlage zur Handhabung von Werkstücken unter Vakuum mit niedriger Kontamination und hohem Durchsatz |
| TW446995B (en) | 1998-05-11 | 2001-07-21 | Semitool Inc | Temperature control system for a thermal reactor |
| US6176668B1 (en) | 1998-05-20 | 2001-01-23 | Applied Komatsu Technology, Inc. | In-situ substrate transfer shuttle |
| US6206176B1 (en) | 1998-05-20 | 2001-03-27 | Applied Komatsu Technology, Inc. | Substrate transfer shuttle having a magnetic drive |
| US6086362A (en) * | 1998-05-20 | 2000-07-11 | Applied Komatsu Technology, Inc. | Multi-function chamber for a substrate processing system |
| US6215897B1 (en) | 1998-05-20 | 2001-04-10 | Applied Komatsu Technology, Inc. | Automated substrate processing system |
| US6517303B1 (en) | 1998-05-20 | 2003-02-11 | Applied Komatsu Technology, Inc. | Substrate transfer shuttle |
| US6213704B1 (en) | 1998-05-20 | 2001-04-10 | Applied Komatsu Technology, Inc. | Method and apparatus for substrate transfer and processing |
| US6169271B1 (en) | 1998-07-13 | 2001-01-02 | Mattson Technology, Inc. | Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing |
| JP4551515B2 (ja) * | 1998-10-07 | 2010-09-29 | 株式会社日立国際電気 | 半導体製造装置およびその温度制御方法 |
| US6191388B1 (en) | 1998-11-18 | 2001-02-20 | Semitool, Inc. | Thermal processor and components thereof |
| TW432488B (en) * | 1999-04-12 | 2001-05-01 | Mosel Vitelic Inc | Reaction facility for forming film and method of air intake |
| KR100574140B1 (ko) * | 1999-07-02 | 2006-04-25 | 동경 엘렉트론 주식회사 | 반도체 제조 설비, 반도체 제조 장치 및 반도체 제조 방법 |
| JP4426024B2 (ja) * | 1999-09-02 | 2010-03-03 | 東京エレクトロン株式会社 | 熱処理装置の温度校正方法 |
| KR100394571B1 (ko) * | 1999-09-17 | 2003-08-14 | 삼성전자주식회사 | 화학기상증착용 튜브 |
| US6298685B1 (en) | 1999-11-03 | 2001-10-09 | Applied Materials, Inc. | Consecutive deposition system |
| US6342691B1 (en) | 1999-11-12 | 2002-01-29 | Mattson Technology, Inc. | Apparatus and method for thermal processing of semiconductor substrates |
| JP3598032B2 (ja) * | 1999-11-30 | 2004-12-08 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法並びに保温ユニット |
| US6246031B1 (en) * | 1999-11-30 | 2001-06-12 | Wafermasters, Inc. | Mini batch furnace |
| US6949143B1 (en) * | 1999-12-15 | 2005-09-27 | Applied Materials, Inc. | Dual substrate loadlock process equipment |
| JP3479020B2 (ja) * | 2000-01-28 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置 |
| US6296709B1 (en) | 2000-02-23 | 2001-10-02 | Advanced Micro Devices, Inc. | Temperature ramp for vertical diffusion furnace |
| US6538193B1 (en) * | 2000-04-21 | 2003-03-25 | Jx Crystals Inc. | Thermophotovoltaic generator in high temperature industrial process |
| KR100960773B1 (ko) * | 2000-09-15 | 2010-06-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 처리 장비용 더블 이중 슬롯 로드록 |
| US6483081B1 (en) * | 2000-11-27 | 2002-11-19 | Novellus Systems, Inc. | In-line cure furnace and method for using the same |
| JP4731755B2 (ja) * | 2001-07-26 | 2011-07-27 | 東京エレクトロン株式会社 | 移載装置の制御方法および熱処理方法並びに熱処理装置 |
| DE10140761B4 (de) * | 2001-08-20 | 2004-08-26 | Infineon Technologies Ag | Wafer-Handhabungsvorrichtung |
| US7316966B2 (en) * | 2001-09-21 | 2008-01-08 | Applied Materials, Inc. | Method for transferring substrates in a load lock chamber |
| US6767844B2 (en) * | 2002-07-03 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma chamber equipped with temperature-controlled focus ring and method of operating |
| KR20040003885A (ko) * | 2002-07-04 | 2004-01-13 | 삼성전자주식회사 | 확산로 온도 검출장치 |
| US20060083495A1 (en) * | 2002-07-15 | 2006-04-20 | Qiu Taiquing | Variable heater element for low to high temperature ranges |
| EP1522090A4 (de) * | 2002-07-15 | 2006-04-05 | Aviza Tech Inc | Thermisches verarbeitungssystem und konfigurierbare vertikalkammer |
| US6727194B2 (en) * | 2002-08-02 | 2004-04-27 | Wafermasters, Inc. | Wafer batch processing system and method |
| JP4618705B2 (ja) * | 2003-09-18 | 2011-01-26 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US7207766B2 (en) * | 2003-10-20 | 2007-04-24 | Applied Materials, Inc. | Load lock chamber for large area substrate processing system |
| US7497414B2 (en) * | 2004-06-14 | 2009-03-03 | Applied Materials, Inc. | Curved slit valve door with flexible coupling |
| US7368303B2 (en) * | 2004-10-20 | 2008-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for temperature control in a rapid thermal processing system |
| US20060273815A1 (en) * | 2005-06-06 | 2006-12-07 | Applied Materials, Inc. | Substrate support with integrated prober drive |
| US20070006936A1 (en) * | 2005-07-07 | 2007-01-11 | Applied Materials, Inc. | Load lock chamber with substrate temperature regulation |
| US7845891B2 (en) * | 2006-01-13 | 2010-12-07 | Applied Materials, Inc. | Decoupled chamber body |
| US7665951B2 (en) * | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
| US7845618B2 (en) | 2006-06-28 | 2010-12-07 | Applied Materials, Inc. | Valve door with ball coupling |
| US7473032B2 (en) * | 2006-06-30 | 2009-01-06 | Honeywell International Inc. | System and method for enabling temperature measurement using a pyrometer and pyrometer target for use with same |
| US8124907B2 (en) * | 2006-08-04 | 2012-02-28 | Applied Materials, Inc. | Load lock chamber with decoupled slit valve door seal compartment |
| US7977258B2 (en) * | 2007-04-06 | 2011-07-12 | Mattson Technology, Inc. | Method and system for thermally processing a plurality of wafer-shaped objects |
| US20080251019A1 (en) * | 2007-04-12 | 2008-10-16 | Sriram Krishnaswami | System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates |
| WO2008131513A1 (en) | 2007-05-01 | 2008-11-06 | Mattson Technology Canada, Inc. | Irradiance pulse heat-treating methods and apparatus |
| US9002514B2 (en) | 2007-11-30 | 2015-04-07 | Novellus Systems, Inc. | Wafer position correction with a dual, side-by-side wafer transfer robot |
| US8060252B2 (en) | 2007-11-30 | 2011-11-15 | Novellus Systems, Inc. | High throughput method of in transit wafer position correction in system using multiple robots |
| US8007275B2 (en) * | 2008-01-25 | 2011-08-30 | Micron Technology, Inc. | Methods and apparatuses for heating semiconductor wafers |
| KR101354140B1 (ko) * | 2008-02-27 | 2014-01-22 | 소이텍 | Ｃｖｄ 반응기 내에서 가스 전구체들의 열화 |
| JP5647502B2 (ja) * | 2010-02-23 | 2014-12-24 | 株式会社日立国際電気 | 熱処理装置、半導体装置の製造方法及び基板処理方法。 |
| WO2012048419A1 (en) | 2010-10-15 | 2012-04-19 | Mattson Technology Canada, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
| WO2013067500A1 (en) * | 2011-11-04 | 2013-05-10 | Warner Power, Llc | Electrically powered industrial furnaces having multiple individually controllable power supplies and shortened cabling requirements |
| JP5766647B2 (ja) * | 2012-03-28 | 2015-08-19 | 東京エレクトロン株式会社 | 熱処理システム、熱処理方法、及び、プログラム |
| JP6027929B2 (ja) | 2013-03-29 | 2016-11-16 | 大陽日酸株式会社 | 気相成長装置の調整方法 |
| WO2019173466A1 (en) * | 2018-03-08 | 2019-09-12 | Watlow Electric Manufacturing Company | Control system for controlling a heater |
| US10796940B2 (en) | 2018-11-05 | 2020-10-06 | Lam Research Corporation | Enhanced automatic wafer centering system and techniques for same |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3385921A (en) * | 1967-06-21 | 1968-05-28 | Electroglas Inc | Diffusion furnace with high speed recovery |
| US3828722A (en) * | 1970-05-01 | 1974-08-13 | Cogar Corp | Apparatus for producing ion-free insulating layers |
| US3836751A (en) * | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
| US4101759A (en) * | 1976-10-26 | 1978-07-18 | General Electric Company | Semiconductor body heater |
| US4348580A (en) * | 1980-05-07 | 1982-09-07 | Tylan Corporation | Energy efficient furnace with movable end wall |
| US4535228A (en) * | 1982-12-28 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Heater assembly and a heat-treatment method of semiconductor wafer using the same |
| US4539933A (en) * | 1983-08-31 | 1985-09-10 | Anicon, Inc. | Chemical vapor deposition apparatus |
| US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| JPS60171723A (ja) * | 1984-02-17 | 1985-09-05 | Fujitsu Ltd | 半導体装置の製造方法及びその製造装置 |
| US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
| JPS60236217A (ja) * | 1984-05-09 | 1985-11-25 | Toshiba Mach Co Ltd | 気相成長装置 |
| JPH0766910B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体単結晶成長装置 |
| US4693777A (en) * | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
| US4610748A (en) * | 1984-12-10 | 1986-09-09 | Advanced Semiconductor Materials Of America, Inc. | Apparatus for processing semiconductor wafers or the like |
| US4755654A (en) * | 1987-03-26 | 1988-07-05 | Crowley John L | Semiconductor wafer heating chamber |
-
1988
- 1988-09-09 EP EP88114763A patent/EP0306967B1/de not_active Expired - Lifetime
- 1988-09-09 DE DE3855871T patent/DE3855871T2/de not_active Expired - Fee Related
- 1988-09-09 US US07/242,175 patent/US5001327A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5001327A (en) | 1991-03-19 |
| EP0306967A2 (de) | 1989-03-15 |
| DE3855871D1 (de) | 1997-05-22 |
| EP0306967A3 (de) | 1990-08-22 |
| EP0306967B1 (de) | 1997-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |