DE3855877T2 - Ferro-elektrischer latenter RAM-Speicher - Google Patents

Ferro-elektrischer latenter RAM-Speicher

Info

Publication number
DE3855877T2
DE3855877T2 DE3855877T DE3855877T DE3855877T2 DE 3855877 T2 DE3855877 T2 DE 3855877T2 DE 3855877 T DE3855877 T DE 3855877T DE 3855877 T DE3855877 T DE 3855877T DE 3855877 T2 DE3855877 T2 DE 3855877T2
Authority
DE
Germany
Prior art keywords
ferro
ram memory
electric latent
latent
electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855877T
Other languages
English (en)
Other versions
DE3855877D1 (de
Inventor
Klaus Dimmler
S Sheffield Eaton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Publication of DE3855877D1 publication Critical patent/DE3855877D1/de
Application granted granted Critical
Publication of DE3855877T2 publication Critical patent/DE3855877T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE3855877T 1987-07-02 1988-06-22 Ferro-elektrischer latenter RAM-Speicher Expired - Fee Related DE3855877T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/069,390 US4809225A (en) 1987-07-02 1987-07-02 Memory cell with volatile and non-volatile portions having ferroelectric capacitors

Publications (2)

Publication Number Publication Date
DE3855877D1 DE3855877D1 (de) 1997-05-22
DE3855877T2 true DE3855877T2 (de) 1997-10-23

Family

ID=22088676

Family Applications (3)

Application Number Title Priority Date Filing Date
DE198888305713T Pending DE297777T1 (de) 1987-07-02 1988-06-22 Ferroelektrischer, latenter bild-ram-speicher.
DE3886600T Expired - Fee Related DE3886600T2 (de) 1987-07-02 1988-06-22 Ferroelektrischer, latenter Bild-RAM-Speicher.
DE3855877T Expired - Fee Related DE3855877T2 (de) 1987-07-02 1988-06-22 Ferro-elektrischer latenter RAM-Speicher

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE198888305713T Pending DE297777T1 (de) 1987-07-02 1988-06-22 Ferroelektrischer, latenter bild-ram-speicher.
DE3886600T Expired - Fee Related DE3886600T2 (de) 1987-07-02 1988-06-22 Ferroelektrischer, latenter Bild-RAM-Speicher.

Country Status (5)

Country Link
US (1) US4809225A (de)
EP (2) EP0297777B1 (de)
JP (1) JP2693967B2 (de)
AU (1) AU588505B2 (de)
DE (3) DE297777T1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929656B4 (de) * 1998-06-30 2006-08-24 LG Semicon Co., Ltd., Cheongju Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung

Families Citing this family (158)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528551A (en) * 1987-05-21 1996-06-18 Texas Instruments Inc Read/write memory with plural memory cell write capability at a selected row address
DE3887924T3 (de) * 1987-06-02 1999-08-12 Nat Semiconductor Corp Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement.
US4910708A (en) * 1987-07-02 1990-03-20 Ramtron Corporation Dram with programmable capacitance divider
US4918654A (en) * 1987-07-02 1990-04-17 Ramtron Corporation SRAM with programmable capacitance divider
US4914627A (en) * 1987-07-02 1990-04-03 Ramtron Corporation One transistor memory cell with programmable capacitance divider
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
US4873665A (en) * 1988-06-07 1989-10-10 Dallas Semiconductor Corporation Dual storage cell memory including data transfer circuits
US5532958A (en) * 1990-06-25 1996-07-02 Dallas Semiconductor Corp. Dual storage cell memory
US5544078A (en) * 1988-06-17 1996-08-06 Dallas Semiconductor Corporation Timekeeping comparison circuitry and dual storage memory cells to detect alarms
US5629907A (en) * 1991-06-18 1997-05-13 Dallas Semiconductor Corporation Low power timekeeping system
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
US5063539A (en) * 1988-10-31 1991-11-05 Raytheon Company Ferroelectric memory with diode isolation
US5287485A (en) * 1988-12-22 1994-02-15 Digital Equipment Corporation Digital processing system including plural memory devices and data transfer circuitry
JPH0336763A (ja) * 1989-07-03 1991-02-18 Hitachi Ltd 半導体集積回路装置
JP2726503B2 (ja) * 1989-08-09 1998-03-11 川崎製鉄株式会社 集積回路
US4974204A (en) * 1989-08-28 1990-11-27 National Semiconductor Corporation Non-volatile programmable interconnection circuit
US5051951A (en) * 1989-11-06 1991-09-24 Carnegie Mellon University Static RAM memory cell using N-channel MOS transistors
US5146299A (en) * 1990-03-02 1992-09-08 Westinghouse Electric Corp. Ferroelectric thin film material, method of deposition, and devices using same
DE4110407A1 (de) * 1990-03-30 1991-10-02 Toshiba Kawasaki Kk Halbleiter-speicheranordnung
US5254482A (en) * 1990-04-16 1993-10-19 National Semiconductor Corporation Ferroelectric capacitor test structure for chip die
US5793667A (en) * 1990-09-19 1998-08-11 The United States Of America As Represented By The Secretary Of The Navy Sense amplifier control system for ferroelectric memories
US5273927A (en) * 1990-12-03 1993-12-28 Micron Technology, Inc. Method of making a ferroelectric capacitor and forming local interconnect
US5119154A (en) * 1990-12-03 1992-06-02 Micron Technology, Inc. Ferroelectric capacitor and method for forming local interconnect
US5270967A (en) * 1991-01-16 1993-12-14 National Semiconductor Corporation Refreshing ferroelectric capacitors
US5142437A (en) * 1991-06-13 1992-08-25 Ramtron Corporation Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
US5198706A (en) * 1991-10-15 1993-03-30 National Semiconductor Ferroelectric programming cell for configurable logic
GB9126998D0 (en) * 1991-12-19 1992-02-19 Alcatel Business Machines Limi Franking machine
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
US5237533A (en) * 1991-12-20 1993-08-17 National Semiconductor Corporation High speed switched sense amplifier
US5926412A (en) * 1992-02-09 1999-07-20 Raytheon Company Ferroelectric memory structure
JP3270765B2 (ja) * 1992-03-03 2002-04-02 ローム株式会社 不揮発性記憶素子
US5353248A (en) * 1992-04-14 1994-10-04 Altera Corporation EEPROM-backed FIFO memory
US5191510A (en) * 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
US5381379A (en) * 1992-12-03 1995-01-10 Sharp Kabushiki Kaisha Non-volatile dynamic random access memory device; a page store device and a page recall device used in the same; and a page store method and a page recall method
FR2701579B1 (fr) * 1993-02-12 1995-04-07 Thomson Csf Semiconducteurs Mémoire à dispositif ferroélectrique de sauvegarde d'information.
JPH06302179A (ja) * 1993-04-13 1994-10-28 Casio Comput Co Ltd 電子機器
US5390143A (en) * 1993-05-17 1995-02-14 Micron Semiconductor, Inc. Non-volatile static memory devices and operational methods
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
JPH0794600A (ja) * 1993-06-29 1995-04-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5373463A (en) * 1993-07-06 1994-12-13 Motorola Inc. Ferroelectric nonvolatile random access memory having drive line segments
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory
US5528463A (en) * 1993-07-16 1996-06-18 Dallas Semiconductor Corp. Low profile sockets and modules for surface mountable applications
US5579206A (en) * 1993-07-16 1996-11-26 Dallas Semiconductor Corporation Enhanced low profile sockets and module systems
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
US5608246A (en) * 1994-02-10 1997-03-04 Ramtron International Corporation Integration of high value capacitor with ferroelectric memory
JP3426693B2 (ja) * 1994-03-07 2003-07-14 株式会社日立製作所 半導体記憶装置
DE69427461T2 (de) * 1994-03-31 2002-04-11 St Microelectronics Srl Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5589284A (en) * 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
US5619470A (en) * 1994-08-17 1997-04-08 Sharp Kabushiki Kaisha Non-volatile dynamic random access memory
US5749090A (en) * 1994-08-22 1998-05-05 Motorola, Inc. Cache tag RAM having separate valid bit array with multiple step invalidation and method therefor
US5572459A (en) * 1994-09-16 1996-11-05 Ramtron International Corporation Voltage reference for a ferroelectric 1T/1C based memory
ES2113754T3 (es) * 1994-09-30 1998-05-01 Siemens Ag Sistema de transmision de datos con un terminal y una disposicion de soporte de datos portatil y procedimiento para recargar la disposicion de soporte de datos portatil por medio del terminal.
JP3672954B2 (ja) * 1994-12-26 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
US5677865A (en) * 1995-09-11 1997-10-14 Micron Technology, Inc. Ferroelectric memory using reference charge circuit
US5905672A (en) * 1997-03-27 1999-05-18 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US5682344A (en) * 1995-09-11 1997-10-28 Micron Technology, Inc. Destructive read protection using address blocking technique
US5638318A (en) * 1995-09-11 1997-06-10 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US5680344A (en) * 1995-09-11 1997-10-21 Micron Technology, Inc. Circuit and method of operating a ferrolectric memory in a DRAM mode
US5592411A (en) * 1995-11-02 1997-01-07 Motorola, Inc. Non-volatile register and method for accessing data therein
US5808929A (en) * 1995-12-06 1998-09-15 Sheikholeslami; Ali Nonvolatile content addressable memory
US5721699A (en) * 1996-03-18 1998-02-24 Symetrix Corporation Ferroelectric memory with feedback circuit
GB9614800D0 (en) * 1996-07-13 1996-09-04 Plessey Semiconductors Ltd Programmable logic arrays
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
US5852571A (en) * 1997-03-14 1998-12-22 Micron Technology, Inc. Nonvolatile ferroelectric memory with folded bit line architecture
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
JP3698386B2 (ja) * 1997-11-27 2005-09-21 ローム株式会社 データ記憶装置
US6263398B1 (en) 1998-02-10 2001-07-17 Ramtron International Corporation Integrated circuit memory device incorporating a non-volatile memory array and a relatively faster access time memory cache
JP3606543B2 (ja) * 1998-09-02 2005-01-05 ローム株式会社 強誘電体を用いた順序回路およびこれを用いた半導体装置
RU2216046C2 (ru) * 1998-09-30 2003-11-10 Инфинеон Текнолоджиз Аг Компоновка схем и способ для аутентификации содержания области памяти
US6282126B1 (en) 1998-12-16 2001-08-28 Micron Technology, Inc. Flash memory with overerase protection
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
JP2000293989A (ja) 1999-04-07 2000-10-20 Nec Corp 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法
US6362675B1 (en) 1999-07-12 2002-03-26 Ramtron International Corporation Nonvolatile octal latch and D-type register
JP3766024B2 (ja) * 1999-08-25 2006-04-12 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 強誘電体フリップフロップを含み、情報を格納する方法のための電子回路
US6650158B2 (en) 2001-02-21 2003-11-18 Ramtron International Corporation Ferroelectric non-volatile logic elements
JP2002269969A (ja) 2001-03-07 2002-09-20 Nec Corp メモリセル、不揮発性メモリ装置、及びその制御方法
JP4802415B2 (ja) * 2001-08-13 2011-10-26 日本テキサス・インスツルメンツ株式会社 強誘電体メモリ
US6795336B2 (en) * 2001-12-07 2004-09-21 Hynix Semiconductor Inc. Magnetic random access memory
JP3768504B2 (ja) * 2002-04-10 2006-04-19 松下電器産業株式会社 不揮発性フリップフロップ
WO2003098636A2 (en) * 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US7050323B2 (en) * 2002-08-29 2006-05-23 Texas Instruments Incorporated Ferroelectric memory
US6980459B2 (en) * 2002-10-24 2005-12-27 Texas Instruments Incorporated Non-volatile SRAM
US6707702B1 (en) 2002-11-13 2004-03-16 Texas Instruments Incorporated Volatile memory with non-volatile ferroelectric capacitors
CN100449641C (zh) 2002-11-25 2009-01-07 松下电器产业株式会社 非易失性存储器单元及其控制方法
US6944042B2 (en) * 2002-12-31 2005-09-13 Texas Instruments Incorporated Multiple bit memory cells and methods for reading non-volatile data
US6996000B2 (en) * 2003-10-07 2006-02-07 Symetrix Corporation Non-volatile ferroelectric SRAM
AU2004300123B2 (en) * 2003-11-18 2010-12-23 Halliburton Energy Services, Inc. A high temperature memory device
US6963222B1 (en) * 2003-12-16 2005-11-08 Xilinx, Inc. Non-volatile product term (pterm) cell
CN1629978A (zh) * 2003-12-19 2005-06-22 精工爱普生株式会社 存储电路、半导体装置、电子设备以及驱动方法
CN1637930B (zh) * 2003-12-24 2011-03-30 精工爱普生株式会社 存储电路、半导体装置及电子设备
JP3760470B2 (ja) 2004-01-06 2006-03-29 セイコーエプソン株式会社 記憶回路、半導体装置、及び電子機器
US20050190597A1 (en) * 2004-02-27 2005-09-01 Yoshihisa Kato Semiconductor device
US6947310B1 (en) 2004-05-13 2005-09-20 Texas Instruments Incorporated Ferroelectric latch
ATE463034T1 (de) 2004-09-22 2010-04-15 Nantero Inc Direktzugriffsspeicher mit nanoröhrenschaltelementen
DE102004047638B4 (de) * 2004-09-30 2011-12-01 Qimonda Ag Nichtflüchtige Speicherzelle
DE102004055006B4 (de) * 2004-11-15 2012-09-13 Infineon Technologies Ag Flipflop mit zusätzlicher Zustandsspeicherung bei Abschaltung
DE102005000809B4 (de) * 2005-01-05 2012-09-13 Qimonda Ag Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten
JP4110481B2 (ja) 2005-01-06 2008-07-02 セイコーエプソン株式会社 記憶装置及び半導体装置
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20090251960A1 (en) * 2008-04-07 2009-10-08 Halliburton Energy Services, Inc. High temperature memory device
US8064256B2 (en) * 2009-03-02 2011-11-22 Unity Semiconductor Corporation Non-volatile FIFO with third dimension memory
JP5256534B2 (ja) * 2009-03-30 2013-08-07 国立大学法人神戸大学 半導体メモリのメモリセル間のデータコピー方法
KR101611416B1 (ko) * 2009-12-09 2016-04-12 삼성전자주식회사 비휘발성 논리 회로, 상기 비휘발성 논리 회로를 포함하는 집적 회로 및 상기 집적 회로의 동작 방법
CN104658598B (zh) 2009-12-11 2017-08-11 株式会社半导体能源研究所 半导体器件、逻辑电路和cpu
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
JP5614241B2 (ja) * 2010-10-29 2014-10-29 富士通セミコンダクター株式会社 強誘電体メモリおよびその動作方法
TWI562142B (en) * 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
US8878174B2 (en) * 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
KR101957315B1 (ko) 2011-05-13 2019-03-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5886128B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
KR102093909B1 (ko) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 및 회로의 구동 방법
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
JP2014063557A (ja) * 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
JP6041707B2 (ja) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 ラッチ回路および半導体装置
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
KR102087443B1 (ko) * 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR102178068B1 (ko) 2012-11-06 2020-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9786350B2 (en) * 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
JP6457239B2 (ja) * 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 半導体装置
JP2015118724A (ja) * 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
FR3016465B1 (fr) 2014-01-10 2017-09-08 Commissariat Energie Atomique Memoire munie de cellules de memoire volatile et non volatile associees
JP6542542B2 (ja) * 2014-02-28 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
US9666276B2 (en) 2014-04-30 2017-05-30 Nxp Usa, Inc. Non-volatile memory using bi-directional resistive elements
US9378812B2 (en) 2014-04-30 2016-06-28 Freescale Semiconductor, Inc. Non-volatile memory using bi-directional resistive elements
US9318158B2 (en) 2014-05-27 2016-04-19 Freescale Semiconductor, Inc. Non-volatile memory using bi-directional resistive elements
US9779807B2 (en) 2014-07-31 2017-10-03 Nxp Usa, Inc. Non-volatile memory using bi-directional resistive elements
FR3029342B1 (fr) 2014-12-01 2018-01-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit de lecture pour memoire resistive
US9281042B1 (en) 2014-12-17 2016-03-08 Freescale Semiconductor, Inc. Non-volatile memory using bi-directional resistive elements and capacitive elements
US9530501B2 (en) 2014-12-31 2016-12-27 Freescale Semiconductor, Inc. Non-volatile static random access memory (NVSRAM) having a shared port
US9466394B1 (en) 2015-04-09 2016-10-11 Freescale Semiconductor, Inc. Mismatch-compensated sense amplifier for highly scaled technology
US9792981B2 (en) 2015-09-29 2017-10-17 Nxp Usa, Inc. Memory with read circuitry and method of operating
US11476260B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11729995B1 (en) 2021-11-01 2023-08-15 Kepler Computing Inc. Common mode compensation for non-linear polar material 1TnC memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US11903219B1 (en) 2022-03-07 2024-02-13 Kepler Computing Inc. Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL247499A (de) * 1959-03-27
US3660827A (en) * 1969-09-10 1972-05-02 Litton Systems Inc Bistable electrical circuit with non-volatile storage capability
US3820714A (en) * 1972-10-06 1974-06-28 L Erickson Water jet projector and control apparatus
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
JPS5372429A (en) * 1976-12-09 1978-06-27 Toshiba Corp Non-volatile semiconductor memory unit
US4144591A (en) * 1977-08-15 1979-03-13 The United States Of America As Represented By The Secretary Of The Army Memory transistor
US4274012A (en) * 1979-01-24 1981-06-16 Xicor, Inc. Substrate coupled floating gate memory cell
JPS56500109A (de) * 1979-03-13 1981-02-05
JPS5723354A (en) * 1980-07-17 1982-02-06 Hashimoto Corp Display and transmission equipment of telephone number
FR2517143A1 (fr) * 1981-11-20 1983-05-27 Efcis Bascule bistable a stockage non volatil et a repositionnement dynamique
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPH0631665A (ja) * 1992-07-14 1994-02-08 Nippon Steel Corp ロボット動作誤差の自動矯正方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929656B4 (de) * 1998-06-30 2006-08-24 LG Semicon Co., Ltd., Cheongju Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung

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DE3855877D1 (de) 1997-05-22
EP0297777A2 (de) 1989-01-04
JPS6466899A (en) 1989-03-13
DE3886600T2 (de) 1994-07-07
EP0530928A3 (en) 1993-05-19
EP0530928A2 (de) 1993-03-10
EP0297777B1 (de) 1993-12-29
EP0530928B1 (de) 1997-04-16
JP2693967B2 (ja) 1997-12-24
AU1556388A (en) 1989-02-09
AU588505B2 (en) 1989-09-14
DE297777T1 (de) 1989-08-03
DE3886600D1 (de) 1994-02-10
EP0297777A3 (en) 1990-12-05
US4809225A (en) 1989-02-28

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