DE3856021D1 - Mehrschichtverbindung für integrierte Schaltungsstruktur mit zwei oder mehreren metallischen Leiterschichten und Verfahren zum Herstellen derselben - Google Patents

Mehrschichtverbindung für integrierte Schaltungsstruktur mit zwei oder mehreren metallischen Leiterschichten und Verfahren zum Herstellen derselben

Info

Publication number
DE3856021D1
DE3856021D1 DE3856021T DE3856021T DE3856021D1 DE 3856021 D1 DE3856021 D1 DE 3856021D1 DE 3856021 T DE3856021 T DE 3856021T DE 3856021 T DE3856021 T DE 3856021T DE 3856021 D1 DE3856021 D1 DE 3856021D1
Authority
DE
Germany
Prior art keywords
integrated circuit
producing
same
circuit structure
conductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3856021T
Other languages
English (en)
Other versions
DE3856021T2 (de
Inventor
Krishna Shankar
Ram Ramani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE3856021D1 publication Critical patent/DE3856021D1/de
Application granted granted Critical
Publication of DE3856021T2 publication Critical patent/DE3856021T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
DE3856021T 1987-01-22 1988-01-14 Mehrschichtverbindung für integrierte Schaltungsstruktur mit zwei oder mehreren metallischen Leiterschichten und Verfahren zum Herstellen derselben Expired - Lifetime DE3856021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/006,000 US4782380A (en) 1987-01-22 1987-01-22 Multilayer interconnection for integrated circuit structure having two or more conductive metal layers

Publications (2)

Publication Number Publication Date
DE3856021D1 true DE3856021D1 (de) 1997-10-16
DE3856021T2 DE3856021T2 (de) 1998-04-16

Family

ID=21718780

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3856021T Expired - Lifetime DE3856021T2 (de) 1987-01-22 1988-01-14 Mehrschichtverbindung für integrierte Schaltungsstruktur mit zwei oder mehreren metallischen Leiterschichten und Verfahren zum Herstellen derselben

Country Status (5)

Country Link
US (1) US4782380A (de)
EP (1) EP0276087B1 (de)
JP (1) JP2700103B2 (de)
AT (1) ATE158112T1 (de)
DE (1) DE3856021T2 (de)

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Also Published As

Publication number Publication date
EP0276087B1 (de) 1997-09-10
EP0276087A3 (de) 1990-06-13
JPS6419763A (en) 1989-01-23
EP0276087A2 (de) 1988-07-27
JP2700103B2 (ja) 1998-01-19
DE3856021T2 (de) 1998-04-16
ATE158112T1 (de) 1997-09-15
US4782380A (en) 1988-11-01

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