DE3856202D1 - Triamin-Entschichtungslösung für positive Photolacke - Google Patents
Triamin-Entschichtungslösung für positive PhotolackeInfo
- Publication number
- DE3856202D1 DE3856202D1 DE3856202T DE3856202T DE3856202D1 DE 3856202 D1 DE3856202 D1 DE 3856202D1 DE 3856202 T DE3856202 T DE 3856202T DE 3856202 T DE3856202 T DE 3856202T DE 3856202 D1 DE3856202 D1 DE 3856202D1
- Authority
- DE
- Germany
- Prior art keywords
- triamine
- stripping solution
- positive photoresists
- organic photoresist
- positive organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/079,714 US4824763A (en) | 1987-07-30 | 1987-07-30 | Triamine positive photoresist stripping composition and prebaking process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856202D1 true DE3856202D1 (de) | 1998-07-16 |
DE3856202T2 DE3856202T2 (de) | 1998-10-22 |
Family
ID=22152327
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856553T Expired - Lifetime DE3856553T2 (de) | 1987-07-30 | 1988-07-20 | Wärmebehandlungsverfahren zum Erleichtern der Entfernung eines positiven Photoresists mit Entschichtungslösungen |
DE3856202T Expired - Fee Related DE3856202T2 (de) | 1987-07-30 | 1988-07-20 | Triamin-Entschichtungslösung für positive Photolacke |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856553T Expired - Lifetime DE3856553T2 (de) | 1987-07-30 | 1988-07-20 | Wärmebehandlungsverfahren zum Erleichtern der Entfernung eines positiven Photoresists mit Entschichtungslösungen |
Country Status (7)
Country | Link |
---|---|
US (2) | US4824763A (de) |
EP (2) | EP0301756B1 (de) |
JP (2) | JP2930956B2 (de) |
KR (1) | KR890003003A (de) |
AT (2) | ATE167310T1 (de) |
DE (2) | DE3856553T2 (de) |
HK (2) | HK1012166A1 (de) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4968582A (en) * | 1988-06-28 | 1990-11-06 | Mcnc And University Of Nc At Charlotte | Photoresists resistant to oxygen plasmas |
US5114827A (en) * | 1988-06-28 | 1992-05-19 | Microelectronics Center Of N.C. | Photoresists resistant to oxygen plasmas |
US5102777A (en) * | 1990-02-01 | 1992-04-07 | Ardrox Inc. | Resist stripping |
US6492311B2 (en) | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US20040018949A1 (en) * | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
US7205265B2 (en) * | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US6121217A (en) | 1990-11-05 | 2000-09-19 | Ekc Technology, Inc. | Alkanolamine semiconductor process residue removal composition and process |
US6546939B1 (en) | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
US6242400B1 (en) | 1990-11-05 | 2001-06-05 | Ekc Technology, Inc. | Method of stripping resists from substrates using hydroxylamine and alkanolamine |
US6187730B1 (en) | 1990-11-05 | 2001-02-13 | Ekc Technology, Inc. | Hydroxylamine-gallic compound composition and process |
US6000411A (en) * | 1990-11-05 | 1999-12-14 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
DE69333877T2 (de) * | 1992-07-09 | 2006-06-14 | Ekc Technology Inc | Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält |
EP0605089B1 (de) * | 1992-11-03 | 1999-01-07 | International Business Machines Corporation | Photolackzusammensetzung |
JP2688168B2 (ja) | 1992-11-03 | 1997-12-08 | インターナショナル・ビジネス・マシーンズ・コーポレイション | フォトレジストイメージ形成プロセス |
JPH06204162A (ja) * | 1992-12-28 | 1994-07-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および該方法に用いられるレジスト組成物 |
JP2823768B2 (ja) * | 1993-02-22 | 1998-11-11 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US7144849B2 (en) * | 1993-06-21 | 2006-12-05 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US5472830A (en) * | 1994-04-18 | 1995-12-05 | Ocg Microelectronic Materials, Inc. | Non-corrosion photoresist stripping composition |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5545353A (en) * | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
KR0154164B1 (ko) * | 1994-07-11 | 1998-12-01 | 김주용 | 반도체소자의 제조방법 |
US5670376A (en) * | 1994-12-14 | 1997-09-23 | Lucent Technologies Inc. | Methodology for monitoring solvent quality |
US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5507978A (en) * | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US5741368A (en) * | 1996-01-30 | 1998-04-21 | Silicon Valley Chemlabs | Dibasic ester stripping composition |
US6511547B1 (en) | 1996-01-30 | 2003-01-28 | Siliconvalley Chemlabs, Inc. | Dibasic ester stripping composition |
US5909744A (en) * | 1996-01-30 | 1999-06-08 | Silicon Valley Chemlabs, Inc. | Dibasic ester stripping composition |
US5904570A (en) * | 1996-05-20 | 1999-05-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for polymer removal after etching |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6268323B1 (en) | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6432209B2 (en) * | 1998-03-03 | 2002-08-13 | Silicon Valley Chemlabs | Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates |
US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
US6368421B1 (en) | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
US20020132491A1 (en) * | 1998-12-31 | 2002-09-19 | John E. Lang | Method of removing photoresist material with dimethyl sulfoxide |
JP3393082B2 (ja) | 1999-04-02 | 2003-04-07 | 東京エレクトロン株式会社 | 現像方法および現像装置 |
US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
WO2002003143A2 (en) | 2000-06-29 | 2002-01-10 | Huntsman Petrochemical Corporation | Alkylene carbonate-based photoresist stripping compositions |
US6764551B2 (en) * | 2001-10-05 | 2004-07-20 | International Business Machines Corporation | Process for removing dopant ions from a substrate |
JP4314320B2 (ja) * | 2002-04-10 | 2009-08-12 | 三菱電機株式会社 | 化合物半導体装置の製造方法 |
WO2003091376A1 (en) * | 2002-04-24 | 2003-11-06 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
TW200404829A (en) * | 2002-08-19 | 2004-04-01 | Rohm & Haas | Resin cleaning method |
US20040157759A1 (en) * | 2003-02-07 | 2004-08-12 | Buckeye International, Inc. | Stripper formulations and process |
US6951710B2 (en) * | 2003-05-23 | 2005-10-04 | Air Products And Chemicals, Inc. | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof |
US7344988B2 (en) * | 2003-10-27 | 2008-03-18 | Dupont Air Products Nanomaterials Llc | Alumina abrasive for chemical mechanical polishing |
US7419911B2 (en) * | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
US7888302B2 (en) * | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7682458B2 (en) * | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
KR101088568B1 (ko) * | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
US7395717B2 (en) * | 2006-02-10 | 2008-07-08 | Milliken & Company | Flexible capacitive sensor |
EP1903400A1 (de) * | 2006-09-20 | 2008-03-26 | Interuniversitair Microelektronica Centrum | Verfahren zur Entfernung von Fotolackschichten von einem Substrat |
TW200927998A (en) * | 2007-09-06 | 2009-07-01 | Ekc Technology Inc | Compositions and method for treating a copper surface |
US9481854B2 (en) | 2008-02-21 | 2016-11-01 | S. C. Johnson & Son, Inc. | Cleaning composition that provides residual benefits |
US8980813B2 (en) | 2008-02-21 | 2015-03-17 | S. C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion on a vertical hard surface and providing residual benefits |
ES2422261T5 (es) * | 2008-02-21 | 2017-05-12 | S.C. Johnson & Son, Inc. | Composición para limpieza que tiene alta autoadhesión y que proporciona beneficios residuales |
WO2009105232A1 (en) * | 2008-02-21 | 2009-08-27 | S. C. Johnson & Son, Inc. | Cleaning composition that provides residual benefits |
US9410111B2 (en) | 2008-02-21 | 2016-08-09 | S.C. Johnson & Son, Inc. | Cleaning composition that provides residual benefits |
US8993502B2 (en) | 2008-02-21 | 2015-03-31 | S. C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion to a vertical hard surface and providing residual benefits |
US8143206B2 (en) * | 2008-02-21 | 2012-03-27 | S.C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion and providing residual benefits |
US8101561B2 (en) * | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
DE202009016945U1 (de) | 2009-12-15 | 2010-03-18 | Cognis Ip Management Gmbh | Reinigungsmittel für Elektronikbauteile |
CN104423182B (zh) * | 2013-08-29 | 2019-05-10 | 得凯莫斯公司弗罗里达有限公司 | 正型光阻剥除剂 |
JP6536464B2 (ja) * | 2016-04-26 | 2019-07-03 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
KR102209389B1 (ko) * | 2016-09-26 | 2021-01-28 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 폐액의 정제 방법 |
WO2020102085A1 (en) | 2018-11-14 | 2020-05-22 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
WO2022173632A1 (en) * | 2021-02-12 | 2022-08-18 | Lam Research Corporation | Quantum efficient photoresists and methods thereof |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK130078C (de) * | 1967-12-14 | |||
US4072528A (en) * | 1972-09-27 | 1978-02-07 | E. I. Du Pont De Nemours And Company | Oxygen barrier layers for photopolymerizable elements |
US4078102A (en) * | 1976-10-29 | 1978-03-07 | International Business Machines Corporation | Process for stripping resist layers from substrates |
CH636121A5 (de) * | 1977-03-18 | 1983-05-13 | Schaefer Chemisches Inst Ag | Metall-ionen-, phosphat- und enzym-freies reiniger-konzentrat. |
US4403029A (en) * | 1982-09-02 | 1983-09-06 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4401748A (en) * | 1982-09-07 | 1983-08-30 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
JPS59134891A (ja) * | 1983-01-21 | 1984-08-02 | メック株式会社 | プリント基板洗浄液 |
JPS6096695A (ja) * | 1983-10-31 | 1985-05-30 | 三洋化成工業株式会社 | 洗浄剤組成物 |
JPS60131535A (ja) * | 1983-12-20 | 1985-07-13 | エッチエムシー・パテンツ・ホールディング・カンパニー・インコーポレーテッド | ポジのホトレジスト用のストリツピング組成物 |
JPS60203944A (ja) * | 1984-03-28 | 1985-10-15 | Mitsubishi Gas Chem Co Inc | ポジ型フオトレジストの除去法 |
US4666824A (en) * | 1984-04-23 | 1987-05-19 | Hercules Incorporated | Photopolymer process and composition employing a photooxidizable component capable of forming endoperoxides |
DE3501675A1 (de) * | 1985-01-19 | 1986-07-24 | Merck Patent Gmbh, 6100 Darmstadt | Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten |
US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
JPH0612455B2 (ja) * | 1985-08-10 | 1994-02-16 | 長瀬産業株式会社 | 剥離剤組成物 |
DE3537441A1 (de) * | 1985-10-22 | 1987-04-23 | Hoechst Ag | Loesemittel zum entfernen von photoresists |
ZA87922B (en) * | 1986-02-28 | 1987-09-30 | Macdermid Inc | Photoresist stripper composition |
-
1987
- 1987-07-30 US US07/079,714 patent/US4824763A/en not_active Expired - Lifetime
-
1988
- 1988-07-20 DE DE3856553T patent/DE3856553T2/de not_active Expired - Lifetime
- 1988-07-20 EP EP88306659A patent/EP0301756B1/de not_active Expired - Lifetime
- 1988-07-20 AT AT88306659T patent/ATE167310T1/de not_active IP Right Cessation
- 1988-07-20 AT AT97121197T patent/ATE231987T1/de not_active IP Right Cessation
- 1988-07-20 EP EP97121197A patent/EP0846984B1/de not_active Expired - Lifetime
- 1988-07-20 DE DE3856202T patent/DE3856202T2/de not_active Expired - Fee Related
- 1988-07-29 JP JP63190475A patent/JP2930956B2/ja not_active Expired - Lifetime
- 1988-07-30 KR KR1019880009806A patent/KR890003003A/ko not_active Application Discontinuation
-
1992
- 1992-04-06 US US07/864,376 patent/US5399464A/en not_active Expired - Lifetime
-
1998
- 1998-04-07 JP JP10094704A patent/JP3044207B2/ja not_active Expired - Lifetime
- 1998-12-09 HK HK98113026A patent/HK1012166A1/xx not_active IP Right Cessation
- 1998-12-09 HK HK98113027A patent/HK1011882A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3856202T2 (de) | 1998-10-22 |
US5399464A (en) | 1995-03-21 |
HK1012166A1 (en) | 1999-07-23 |
EP0301756B1 (de) | 1998-06-10 |
JP3044207B2 (ja) | 2000-05-22 |
ATE231987T1 (de) | 2003-02-15 |
JP2930956B2 (ja) | 1999-08-09 |
JPH01105949A (ja) | 1989-04-24 |
US4824763A (en) | 1989-04-25 |
EP0301756A2 (de) | 1989-02-01 |
DE3856553T2 (de) | 2004-02-19 |
DE3856553D1 (de) | 2003-03-06 |
EP0846984A2 (de) | 1998-06-10 |
KR890003003A (ko) | 1989-04-12 |
EP0301756A3 (de) | 1990-11-14 |
EP0846984A3 (de) | 2000-03-22 |
EP0846984B1 (de) | 2003-01-29 |
JPH10319609A (ja) | 1998-12-04 |
ATE167310T1 (de) | 1998-06-15 |
HK1011882A1 (en) | 1999-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |