DE3872446T2 - Vorspannungseinrichtung, um eine spannungsunabhaengige kapazitanz zu verwirklichen. - Google Patents
Vorspannungseinrichtung, um eine spannungsunabhaengige kapazitanz zu verwirklichen.Info
- Publication number
- DE3872446T2 DE3872446T2 DE8888106663T DE3872446T DE3872446T2 DE 3872446 T2 DE3872446 T2 DE 3872446T2 DE 8888106663 T DE8888106663 T DE 8888106663T DE 3872446 T DE3872446 T DE 3872446T DE 3872446 T2 DE3872446 T2 DE 3872446T2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- tension device
- free capacity
- capacity
- free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/049,914 US4786828A (en) | 1987-05-15 | 1987-05-15 | Bias scheme for achieving voltage independent capacitance |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3872446D1 DE3872446D1 (de) | 1992-08-06 |
DE3872446T2 true DE3872446T2 (de) | 1993-02-11 |
Family
ID=21962427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888106663T Expired - Fee Related DE3872446T2 (de) | 1987-05-15 | 1988-04-26 | Vorspannungseinrichtung, um eine spannungsunabhaengige kapazitanz zu verwirklichen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4786828A (de) |
EP (1) | EP0290857B1 (de) |
JP (1) | JPS63293968A (de) |
DE (1) | DE3872446T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384502A (en) * | 1993-06-24 | 1995-01-24 | Intel Corporation | Phase locked loop circuitry with split loop filter |
JP2684976B2 (ja) * | 1993-11-24 | 1997-12-03 | 日本電気株式会社 | 半導体装置 |
DE4447307A1 (de) * | 1994-12-31 | 1996-07-04 | Bosch Gmbh Robert | Schaltungsanordnung zur Verminderung der Spannungsabhängigkeit einer MOS-Kapazität |
US5926064A (en) * | 1998-01-23 | 1999-07-20 | National Semiconductor Corporation | Floating MOS capacitor |
US6262469B1 (en) * | 1998-03-25 | 2001-07-17 | Advanced Micro Devices, Inc. | Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor |
US6020616A (en) * | 1998-03-31 | 2000-02-01 | Vlsi Technology, Inc. | Automated design of on-chip capacitive structures for suppressing inductive noise |
US6010939A (en) | 1998-03-31 | 2000-01-04 | Vlsi Technology, Inc. | Methods for making shallow trench capacitive structures |
US6153463A (en) * | 1999-07-09 | 2000-11-28 | Macronix International Co., Ltd. | Triple plate capacitor and method for manufacturing |
DE19961487B4 (de) * | 1999-09-30 | 2005-08-04 | Infineon Technologies Ag | Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf |
EP1218945A1 (de) | 1999-09-30 | 2002-07-03 | Infineon Technologies AG | Schaltungsanordnung zur bildung eines mos-kondensators mit geringer spannungsabhängigkeit und geringem flächenbedarf |
US6667539B2 (en) * | 2001-11-08 | 2003-12-23 | International Business Machines Corporation | Method to increase the tuning voltage range of MOS varactors |
US20040206999A1 (en) * | 2002-05-09 | 2004-10-21 | Impinj, Inc., A Delaware Corporation | Metal dielectric semiconductor floating gate variable capacitor |
US7728362B2 (en) | 2006-01-20 | 2010-06-01 | International Business Machines Corporation | Creating integrated circuit capacitance from gate array structures |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3109995A (en) * | 1959-09-01 | 1963-11-05 | Hughes Aircraft Co | Voltage tuned oscillator |
US3139596A (en) * | 1962-05-09 | 1964-06-30 | Bell Telephone Labor Inc | Phase modulation by nonlinear voltagesensitive capacitor with preservation of modulation index |
NL298376A (de) * | 1962-09-28 | |||
US3559104A (en) * | 1968-08-26 | 1971-01-26 | Trw Inc | Wideband crystal-controlled fm modulator having noise cancelling feedback |
US3582823A (en) * | 1969-02-24 | 1971-06-01 | Fairchild Camera Instr Co | Voltage controlled oscillator in which capacitive diodes become resistive during portions of each cycle |
US3586929A (en) * | 1969-03-27 | 1971-06-22 | Philips Corp | Semiconductor device having two varicap diodes arranged back to back |
US3569865A (en) * | 1969-06-12 | 1971-03-09 | Us Navy | High stability voltage-controlled crystal oscillator |
US3962713A (en) * | 1972-06-02 | 1976-06-08 | Texas Instruments Incorporated | Large value capacitor |
NL7215200A (de) * | 1972-11-10 | 1974-05-14 | ||
CA1007308A (en) * | 1972-12-29 | 1977-03-22 | Jack A. Dorler | Cross-coupled capacitor for ac performance tuning |
US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
SE379461B (de) * | 1974-07-26 | 1975-10-06 | Ericsson Telefon Ab L M | |
US4003004A (en) * | 1975-04-09 | 1977-01-11 | Nasa | Frequency modulated oscillator |
US4005466A (en) * | 1975-05-07 | 1977-01-25 | Rca Corporation | Planar voltage variable tuning capacitors |
DE2524171C2 (de) * | 1975-05-31 | 1984-11-08 | Telefunken electronic GmbH, 7100 Heilbronn | Abstimmschaltung |
US4214252A (en) * | 1977-08-06 | 1980-07-22 | U.S. Philips Corporation | Semiconductor device having a MOS-capacitor |
US4249194A (en) * | 1977-08-29 | 1981-02-03 | Texas Instruments Incorporated | Integrated circuit MOS capacitor using implanted region to change threshold |
US4698653A (en) * | 1979-10-09 | 1987-10-06 | Cardwell Jr Walter T | Semiconductor devices controlled by depletion regions |
JPS56129756U (de) * | 1980-02-29 | 1981-10-02 | ||
NL8003874A (nl) * | 1980-07-04 | 1982-02-01 | Philips Nv | Veldeffektcapaciteit. |
FR2499766A1 (en) * | 1981-02-11 | 1982-08-13 | Texas Instruments France | NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter |
JPS6068662U (ja) * | 1983-10-17 | 1985-05-15 | 三洋電機株式会社 | 集積化コンデンサ |
-
1987
- 1987-05-15 US US07/049,914 patent/US4786828A/en not_active Expired - Lifetime
-
1988
- 1988-03-15 JP JP63059572A patent/JPS63293968A/ja active Granted
- 1988-04-26 DE DE8888106663T patent/DE3872446T2/de not_active Expired - Fee Related
- 1988-04-26 EP EP88106663A patent/EP0290857B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0290857B1 (de) | 1992-07-01 |
JPH0558670B2 (de) | 1993-08-27 |
EP0290857A1 (de) | 1988-11-17 |
DE3872446D1 (de) | 1992-08-06 |
US4786828A (en) | 1988-11-22 |
JPS63293968A (ja) | 1988-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |