DE3882278T2 - MOS-Speicher. - Google Patents

MOS-Speicher.

Info

Publication number
DE3882278T2
DE3882278T2 DE88106204T DE3882278T DE3882278T2 DE 3882278 T2 DE3882278 T2 DE 3882278T2 DE 88106204 T DE88106204 T DE 88106204T DE 3882278 T DE3882278 T DE 3882278T DE 3882278 T2 DE3882278 T2 DE 3882278T2
Authority
DE
Germany
Prior art keywords
mos memory
mos
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88106204T
Other languages
English (en)
Other versions
DE3882278D1 (de
Inventor
Robert Edward Busch
Endre Philip Thoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3882278D1 publication Critical patent/DE3882278D1/de
Publication of DE3882278T2 publication Critical patent/DE3882278T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
DE88106204T 1987-05-18 1988-04-19 MOS-Speicher. Expired - Fee Related DE3882278T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/050,361 US4807195A (en) 1987-05-18 1987-05-18 Apparatus and method for providing a dual sense amplifier with divided bit line isolation

Publications (2)

Publication Number Publication Date
DE3882278D1 DE3882278D1 (de) 1993-08-19
DE3882278T2 true DE3882278T2 (de) 1994-02-17

Family

ID=21964819

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88106204T Expired - Fee Related DE3882278T2 (de) 1987-05-18 1988-04-19 MOS-Speicher.

Country Status (4)

Country Link
US (1) US4807195A (de)
EP (1) EP0291706B1 (de)
JP (1) JPH0634352B2 (de)
DE (1) DE3882278T2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862348A (en) * 1986-01-20 1989-08-29 Nec Corporation Microcomputer having high-speed and low-speed operation modes for reading a memory
JPH0632232B2 (ja) * 1987-07-01 1994-04-27 日本電気株式会社 行デコ−ダ
DE69121503T2 (de) * 1990-09-29 1997-02-13 Nec Corp Halbleiterspeicheranordnung mit einer rauscharmen Abfühlstruktur
US5715189A (en) * 1993-04-13 1998-02-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical bit line arrangement
US5502683A (en) * 1993-04-20 1996-03-26 International Business Machines Corporation Dual ported memory with word line access control
JPH0757464A (ja) * 1993-08-10 1995-03-03 Oki Electric Ind Co Ltd 半導体記憶回路
JPH07111083A (ja) * 1993-08-20 1995-04-25 Mitsubishi Electric Corp 半導体記憶装置
JP3672946B2 (ja) * 1993-11-30 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
JP2783271B2 (ja) * 1995-01-30 1998-08-06 日本電気株式会社 半導体記憶装置
US5745422A (en) * 1996-11-12 1998-04-28 International Business Machines Corporation Cross-coupled bitline segments for generalized data propagation
US5880988A (en) * 1997-07-11 1999-03-09 International Business Machines Corporation Reference potential for sensing data in electronic storage element
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
US5875141A (en) * 1997-08-14 1999-02-23 Micron Technology, Inc. Circuit and method for a memory device with P-channel isolation gates
KR100261217B1 (ko) * 1997-11-21 2000-07-01 윤종용 반도체 메모리장치의 셀 어레이 제어장치
KR100335267B1 (ko) 1998-06-29 2002-09-25 주식회사 하이닉스반도체 센싱전류의소모를줄이는반도체메모리장치
DE10015278B4 (de) 2000-03-28 2004-09-23 Infineon Technologies Ag Halbleiterspeicher mit einem Speicherzellenfeld
US7184290B1 (en) * 2000-06-28 2007-02-27 Marvell International Ltd. Logic process DRAM
DE10301856B4 (de) * 2003-01-17 2005-04-21 Infineon Technologies Ag Integrierter Speicher mit Trennschaltungen an Bitleitungs-Verkreuzungsstellen
US7133321B2 (en) * 2003-10-09 2006-11-07 Micron Technology, Inc. Sense amplifier circuit
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7492632B2 (en) * 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
WO2007128738A1 (en) * 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
WO2009031052A2 (en) * 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) * 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) * 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) * 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US8050072B2 (en) 2008-10-08 2011-11-01 Seagate Technology Llc Dual stage sensing for non-volatile memory
US7924630B2 (en) * 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) * 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
CN102365628B (zh) * 2009-03-31 2015-05-20 美光科技公司 用于提供半导体存储器装置的技术
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) * 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) * 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) * 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8576631B2 (en) * 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) * 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) * 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US8958256B2 (en) * 2012-04-10 2015-02-17 Micron Technology, Inc. Apparatuses and methods for improved memory operation times
KR20210147132A (ko) 2020-05-27 2021-12-07 삼성전자주식회사 메모리 장치 및 메모리 장치를 포함하는 메모리 모듈

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2634089B2 (de) * 1975-08-11 1978-01-05 Schaltungsanordnung zum erfassen schwacher signale
JPS5931155B2 (ja) * 1979-10-11 1984-07-31 インターナシヨナルビジネス マシーンズ コーポレーシヨン 感知増幅回路
JPS5942399B2 (ja) * 1979-12-21 1984-10-15 株式会社日立製作所 メモリ装置
JPS595989B2 (ja) * 1980-02-16 1984-02-08 富士通株式会社 スタティック型ランダムアクセスメモリ
US4287576A (en) * 1980-03-26 1981-09-01 International Business Machines Corporation Sense amplifying system for memories with small cells
US4312047A (en) * 1980-05-29 1982-01-19 Motorola, Inc. Memory array having improved isolation between sense lines
US4351034A (en) * 1980-10-10 1982-09-21 Inmos Corporation Folded bit line-shared sense amplifiers
DE3101802A1 (de) * 1981-01-21 1982-08-19 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter halbleiterspeicher
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
JPS6098597A (ja) * 1983-11-01 1985-06-01 Fujitsu Ltd 半導体記憶装置
JPS60234297A (ja) * 1984-05-07 1985-11-20 Hitachi Ltd ダイナミツク型ｒａｍ
EP0180054A3 (de) * 1984-10-31 1988-05-11 Texas Instruments Incorporated Angepasste Struktur mit gefalzten Bitleitungsenden
US4730280A (en) * 1984-11-20 1988-03-08 Fujitsu Limited Semiconductor memory device having sense amplifiers with different driving abilities
JPS61142591A (ja) * 1984-12-13 1986-06-30 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0634352B2 (ja) 1994-05-02
US4807195A (en) 1989-02-21
EP0291706A3 (de) 1991-01-16
JPS63293790A (ja) 1988-11-30
EP0291706A2 (de) 1988-11-23
DE3882278D1 (de) 1993-08-19
EP0291706B1 (de) 1993-07-14

Similar Documents

Publication Publication Date Title
DE3882278D1 (de) Mos-speicher.
DE3485038D1 (de) Mos-speicher.
DE3782756D1 (de) Direktzugriffspeichereinrichtung.
DE3751002D1 (de) Halbleiterspeicher.
DE69007827T2 (de) Halbleiter-Speicher.
DE3788747D1 (de) Halbleiterspeicher.
DE3885594T2 (de) Speicherprüfgerät.
DE3787324D1 (de) Videospeicher.
DE3771238D1 (de) Halbleiterspeicher.
DE3869158D1 (de) Speicher-leseschaltung.
DE3887823T2 (de) Halbleiterspeicher.
DE3887716T2 (de) Transistor.
DE3783100D1 (de) Festwertspeicheranordnung.
DE3585811D1 (de) Direktzugriffsspeicher.
DE3586736D1 (de) Halbleiterspeicher.
DE3883064D1 (de) Festwertspeicherschaltung.
DE3773663D1 (de) Statischer halbleiterspeicher.
DE69016701T2 (de) Halbleiterspeicher.
DE3584612D1 (de) Mos-festwertspeicher.
DE3871823T2 (de) Halbleiterspeicheranordnung.
FI872707A0 (fi) Kanyl.
DE3784298T2 (de) Halbleiterspeicher.
DE3854005T2 (de) Speicherzelle.
DE3887703D1 (de) MOS-Gatearray-Schaltung.
DE3788573D1 (de) Halbleiterspeicher.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee