DE3884292T2 - Bipolarer Transistor mit Heteroübergang. - Google Patents

Bipolarer Transistor mit Heteroübergang.

Info

Publication number: DE3884292T2
Authority: DE; Germany
Prior art keywords: heterojunction; bipolar transistor; bipolar; transistor
Prior art date: 1987-07-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE88305978T

Other languages

English (en)

Other versions

DE3884292D1 (de

Inventor

Riichi C O Patent Divisi Katoh

Mamoru C O Patent Divis Kurata

Kouhei C O Patent Div Morizuka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-07-02

Filing date

1988-06-29

Publication date

1994-02-17

1988-06-29 Application filed by Toshiba Corp filed Critical Toshiba Corp

1993-10-28 Publication of DE3884292D1 publication Critical patent/DE3884292D1/de

1994-02-17 Application granted granted Critical

1994-02-17 Publication of DE3884292T2 publication Critical patent/DE3884292T2/de

2008-06-30 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors

DE88305978T 1987-07-02 1988-06-29 Bipolarer Transistor mit Heteroübergang. Expired - Fee Related DE3884292T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP16586187		1987-07-02
JP63147374A JP2542676B2 (ja)	1987-07-02	1988-06-15	ヘテロ接合バイポ―ラトランジスタ

Publications (2)

Publication Number	Publication Date
DE3884292D1 DE3884292D1 (de)	1993-10-28
DE3884292T2 true DE3884292T2 (de)	1994-02-17

Family

ID=26477940

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE88305978T Expired - Fee Related DE3884292T2 (de)	1987-07-02	1988-06-29	Bipolarer Transistor mit Heteroübergang.

Country Status (4)

Country	Link
US (1)	US4933732A (de)
EP (1)	EP0297886B1 (de)
JP (1)	JP2542676B2 (de)
DE (1)	DE3884292T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2851044B2 (ja) *	1988-03-30	1999-01-27	株式会社東芝	半導体装置の製造方法
US5198689A (en) *	1988-11-30	1993-03-30	Fujitsu Limited	Heterojunction bipolar transistor
JP2860138B2 (ja) *	1989-03-29	1999-02-24	キヤノン株式会社	半導体装置およびこれを用いた光電変換装置
JPH02297942A (ja) *	1989-05-11	1990-12-10	Mitsubishi Electric Corp	半導体装置及びその製造方法
US5212103A (en) *	1989-05-11	1993-05-18	Mitsubishi Denki Kabushiki Kaisha	Method of making a heterojunction bipolar transistor
JP2804095B2 (ja) *	1989-07-10	1998-09-24	株式会社東芝	ヘテロ接合バイボーラトランジスタ
EP0416166B1 (de) *	1989-09-08	1996-01-17	Siemens Aktiengesellschaft	Verfahren zur Herstellung eines Heterobipolartransistors mit Separation des Kollektoranschlusses
US5340755A (en) *	1989-09-08	1994-08-23	Siemens Aktiegensellschaft	Method of making planar heterobipolar transistor having trenched isolation of the collector terminal
JPH03105925A (ja) *	1989-09-19	1991-05-02	Fujitsu Ltd	半導体装置
JPH03218681A (ja) *	1989-11-24	1991-09-26	Toshiba Corp	ヘテロ接合バイポーラトランジスタ
EP0445475B1 (de) *	1990-02-20	1998-08-26	Kabushiki Kaisha Toshiba	Bipolartransistor mit Heteroübergang
KR950010283B1 (ko) *	1990-05-31	1995-09-12	캐논 가부시끼가이샤	매립전극을 가지는 반도체장치 및 그의 제조방법
EP0520482A3 (en) *	1991-06-28	1994-06-22	Texas Instruments Inc	Multiple layer collector structure for bipolar transistors
US5270223A (en) *	1991-06-28	1993-12-14	Texas Instruments Incorporated	Multiple layer wide bandgap collector structure for bipolar transistors
JPH05109753A (ja) *	1991-08-16	1993-04-30	Toshiba Corp	バイポーラトランジスタ
US5365477A (en) *	1992-06-16	1994-11-15	The United States Of America As Represented By The Secretary Of The Navy	Dynamic random access memory device
FR2692721B1 (fr) *	1992-06-17	1995-06-30	France Telecom	Procede de realisation de transistor bipolaire a heterojonction et transistor obtenu.
JPH0815214B2 (ja) *	1993-03-12	1996-02-14	日本電気株式会社	量子細線構造
US5721437A (en) *	1993-06-08	1998-02-24	Sharp Kabushiki Kaisha	Heterojunction-type bipolar transistor with ballast resistance layer
JP2958213B2 (ja) *	1993-06-08	1999-10-06	シャープ株式会社	ヘテロ接合バイポーラトランジスタ
DE19718624A1 (de) *	1997-05-02	1998-11-05	Daimler Benz Ag	Heterobipolartransistor mit Mehrschicht-Emitterstruktur
DE19834491A1 (de) *	1998-07-31	2000-02-03	Daimler Chrysler Ag	Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors
US7038250B2 (en) *	2003-05-28	2006-05-02	Kabushiki Kaisha Toshiba	Semiconductor device suited for a high frequency amplifier
US9461153B2 (en)	2011-11-16	2016-10-04	Skyworks Solutions, Inc.	Devices and methods related to a barrier for metallization of a gallium based semiconductor
US9847407B2 (en)	2011-11-16	2017-12-19	Skyworks Solutions, Inc.	Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
JP2017011264A (ja) *	2015-06-22	2017-01-12	住友化学株式会社	半導体基板、半導体基板の製造方法およびヘテロ接合バイポーラトランジスタ
US11024728B2 (en) *	2019-02-15	2021-06-01	Qualcomm Incorporated	Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)
KR102288129B1 (ko)	2020-02-06	2021-08-10	주식회사 토비스	버튼 복합 구조물

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4750025A (en) *	1981-12-04	1988-06-07	American Telephone And Telegraph Company, At&T Bell Laboratories	Depletion stop transistor
US4593305A (en) *	1983-05-17	1986-06-03	Kabushiki Kaisha Toshiba	Heterostructure bipolar transistor

1988
- 1988-06-15 JP JP63147374A patent/JP2542676B2/ja not_active Expired - Lifetime
- 1988-06-29 DE DE88305978T patent/DE3884292T2/de not_active Expired - Fee Related
- 1988-06-29 EP EP88305978A patent/EP0297886B1/de not_active Expired - Lifetime
- 1988-06-30 US US07/214,058 patent/US4933732A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0297886B1 (de)	1993-09-22
US4933732A (en)	1990-06-12
EP0297886A3 (en)	1989-12-13
DE3884292D1 (de)	1993-10-28
JPH01103869A (ja)	1989-04-20
EP0297886A2 (de)	1989-01-04
JP2542676B2 (ja)	1996-10-09

Legal Events

Date	Code	Title	Description
1994-10-20	8364	No opposition during term of opposition
1999-08-12	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3884292T2 (de)	1994-02-17	Bipolarer Transistor mit Heteroübergang.
DE3583119D1 (de)	1991-07-11	Bipolartransistor mit heterouebergang.
DE3888085D1 (de)	1994-04-07	Bipolartransistor mit Heteroübergang.
DE3788453T2 (de)	1994-06-23	Komplementäres vertikales bipolares Transistorpaar mit flachem Übergang.
DE3889610T2 (de)	1994-09-01	Halbleiteranordnung mit einem Trench-Bipolartransistor.
DE3882304D1 (de)	1993-08-19	Mikrowellentransistor mit doppelheterouebergang.
DE3785196T2 (de)	1993-07-15	Bipolartransistor mit heterouebergang.
DE3853026D1 (de)	1995-03-23	Transistor mit heissen Elektronen.
DE3860836D1 (de)	1990-11-29	Bipolarer transistor mit heterouebergang.
DE3884665T2 (de)	1994-05-11	Hochleistungstransistor mit Seitenwandemitter.
FR2606214B1 (fr)	1989-12-15	Transistor bipolaire du type heterojonction
DE3750310T2 (de)	1995-03-02	Heteroübergangs-Feldeffektanordnung.
DE3788500T2 (de)	1994-04-28	Bipolarer Halbleitertransistor.
DE3851175D1 (de)	1994-09-29	Bipolartransistor mit Heteroübergängen.
DE68906095T2 (de)	1993-10-28	Vertikaler Bipolartransistor.
DE3780284D1 (de)	1992-08-13	Bipolarer heterouebergangs-transistor mit ballistischem betrieb.
DE3882565T2 (de)	1994-02-24	Bipolartransistor.
DE3687049T2 (de)	1993-03-25	Bipolare eigenschaften aufweisender transistor mit heterouebergang.
DE3851991D1 (de)	1994-12-08	Bipolartransistoren.
DE3888602T2 (de)	1994-10-27	Bipolartransistor mit Heteroübergängen.
DE3874949D1 (de)	1992-11-05	Heterouebergang-bipolartransistor.
DE68909977T2 (de)	1994-05-05	Bipolartransistor.
DE68928670D1 (de)	1998-06-18	Heterostrukturbipolartransistor
DE69128384T2 (de)	1998-04-30	Heteroübergang-Bipolartransistor
DE3787010T2 (de)	1994-03-17	Feldeffekttransistor mit Heteroübergang.