DE3884763T2 - Anlage zur metallorganischen chemischen Abscheidung aus der Gasphase sowie Verfahren zu deren Anwendung. - Google Patents

Anlage zur metallorganischen chemischen Abscheidung aus der Gasphase sowie Verfahren zu deren Anwendung.

Info

Publication number
DE3884763T2
DE3884763T2 DE88402977T DE3884763T DE3884763T2 DE 3884763 T2 DE3884763 T2 DE 3884763T2 DE 88402977 T DE88402977 T DE 88402977T DE 3884763 T DE3884763 T DE 3884763T DE 3884763 T2 DE3884763 T2 DE 3884763T2
Authority
DE
Germany
Prior art keywords
plant
gas phase
chemical deposition
organometallic chemical
organometallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88402977T
Other languages
English (en)
Other versions
DE3884763D1 (de
Inventor
Takuya Fujii
Susumu Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62299158A external-priority patent/JP2668687B2/ja
Priority claimed from JP63248311A external-priority patent/JPH0296324A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3884763D1 publication Critical patent/DE3884763D1/de
Application granted granted Critical
Publication of DE3884763T2 publication Critical patent/DE3884763T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
DE88402977T 1987-11-27 1988-11-25 Anlage zur metallorganischen chemischen Abscheidung aus der Gasphase sowie Verfahren zu deren Anwendung. Expired - Lifetime DE3884763T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62299158A JP2668687B2 (ja) 1987-11-27 1987-11-27 Ｃ ｖ ｄ 装 置
JP63248311A JPH0296324A (ja) 1988-09-30 1988-09-30 半導体装置の製造方法およびそれに用いる気相成長装置

Publications (2)

Publication Number Publication Date
DE3884763D1 DE3884763D1 (de) 1993-11-11
DE3884763T2 true DE3884763T2 (de) 1994-01-27

Family

ID=26538710

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88402977T Expired - Lifetime DE3884763T2 (de) 1987-11-27 1988-11-25 Anlage zur metallorganischen chemischen Abscheidung aus der Gasphase sowie Verfahren zu deren Anwendung.

Country Status (4)

Country Link
US (1) US4980204A (de)
EP (1) EP0318395B1 (de)
KR (1) KR920010690B1 (de)
DE (1) DE3884763T2 (de)

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Also Published As

Publication number Publication date
KR890008936A (ko) 1989-07-13
EP0318395B1 (de) 1993-10-06
EP0318395A3 (en) 1990-05-02
US4980204A (en) 1990-12-25
EP0318395A2 (de) 1989-05-31
DE3884763D1 (de) 1993-11-11
KR920010690B1 (ko) 1992-12-12

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