DE388800T1 - Plasma-reaktionsgeraet und substrat-behandlungsverfahren. - Google Patents
Plasma-reaktionsgeraet und substrat-behandlungsverfahren.Info
- Publication number
- DE388800T1 DE388800T1 DE199090104938T DE90104938T DE388800T1 DE 388800 T1 DE388800 T1 DE 388800T1 DE 199090104938 T DE199090104938 T DE 199090104938T DE 90104938 T DE90104938 T DE 90104938T DE 388800 T1 DE388800 T1 DE 388800T1
- Authority
- DE
- Germany
- Prior art keywords
- treatment method
- plasma reaction
- substrate treatment
- reaction machine
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/328,017 US4943345A (en) | 1989-03-23 | 1989-03-23 | Plasma reactor apparatus and method for treating a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE388800T1 true DE388800T1 (de) | 1991-02-07 |
Family
ID=23279149
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE199090104938T Pending DE388800T1 (de) | 1989-03-23 | 1990-03-15 | Plasma-reaktionsgeraet und substrat-behandlungsverfahren. |
DE69029480T Expired - Fee Related DE69029480T2 (de) | 1989-03-23 | 1990-03-15 | Plasma-Reaktionsgerät und Substrat-Behandlungsverfahren |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69029480T Expired - Fee Related DE69029480T2 (de) | 1989-03-23 | 1990-03-15 | Plasma-Reaktionsgerät und Substrat-Behandlungsverfahren |
Country Status (9)
Country | Link |
---|---|
US (1) | US4943345A (de) |
EP (1) | EP0388800B1 (de) |
JP (1) | JP2553947B2 (de) |
AT (1) | ATE146899T1 (de) |
CA (1) | CA2008926C (de) |
DE (2) | DE388800T1 (de) |
DK (1) | DK0388800T3 (de) |
ES (1) | ES2018129T3 (de) |
GR (1) | GR900300199T1 (de) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4018954A1 (de) * | 1989-06-15 | 1991-01-03 | Mitsubishi Electric Corp | Trockenaetzgeraet |
US5273609A (en) * | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
EP0478283B1 (de) * | 1990-09-26 | 1996-12-27 | Hitachi, Ltd. | Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma |
EP0478233B1 (de) * | 1990-09-27 | 1996-01-03 | AT&T Corp. | Verfahren zur Herstellung integrierter Schaltungen |
GB9025695D0 (en) * | 1990-11-27 | 1991-01-09 | Welding Inst | Gas plasma generating system |
SE502094C2 (sv) * | 1991-08-16 | 1995-08-14 | Sandvik Ab | Metod för diamantbeläggning med mikrovågsplasma |
DE4132558C1 (de) * | 1991-09-30 | 1992-12-03 | Secon Halbleiterproduktionsgeraete Ges.M.B.H., Wien, At | |
DE4138541A1 (de) * | 1991-11-23 | 1993-05-27 | Philips Patentverwaltung | Cvd-verfahren zur beschichtung ausgedehnter substrate |
US5311103A (en) * | 1992-06-01 | 1994-05-10 | Board Of Trustees Operating Michigan State University | Apparatus for the coating of material on a substrate using a microwave or UHF plasma |
US5510088A (en) * | 1992-06-11 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Low temperature plasma film deposition using dielectric chamber as source material |
DE69318480T2 (de) * | 1992-06-23 | 1998-09-17 | Nippon Telegraph & Telephone | Plasmabearbeitungsgerät |
US5292370A (en) * | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
US5470423A (en) * | 1994-01-25 | 1995-11-28 | Board Of Trustees Operating Michigan State University | Microwave pultrusion apparatus and method of use |
US5793013A (en) * | 1995-06-07 | 1998-08-11 | Physical Sciences, Inc. | Microwave-driven plasma spraying apparatus and method for spraying |
DE19532435C2 (de) * | 1995-09-02 | 2001-07-19 | Ver Foerderung Inst Kunststoff | Vorrichtung und Verfahren zum Erzeugen eines Plasmas |
US5965034A (en) | 1995-12-04 | 1999-10-12 | Mc Electronics Co., Ltd. | High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
US6017221A (en) * | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
FR2743088B1 (fr) * | 1995-12-27 | 1998-03-20 | Framatome Sa | Procede de revetement d'un substrat en metal passivable ou en alliage par une couche de borure metallique en tube de gainage obtenue par ce procede |
US5736818A (en) * | 1996-03-15 | 1998-04-07 | Board Of Trustees Operating Michigan State University | Resonant radiofrequency wave plasma generating apparatus with improved stage |
EP0958401B1 (de) | 1996-06-28 | 2004-09-08 | Lam Research Corporation | Verfahren und vorrichtung für cvd oder anätzung mit hoher plasmadichte |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US6312554B1 (en) * | 1996-12-05 | 2001-11-06 | Applied Materials, Inc. | Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber |
US6184158B1 (en) | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
US6039834A (en) | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
US6057645A (en) * | 1997-12-31 | 2000-05-02 | Eaton Corporation | Plasma discharge device with dynamic tuning by a movable microwave trap |
DE19814812C2 (de) * | 1998-04-02 | 2000-05-11 | Mut Mikrowellen Umwelt Technol | Plasmabrenner mit einem Mikrowellensender |
DE69942020D1 (de) * | 1998-12-11 | 2010-04-01 | Surface Technology Systems Plc | Plasmabehandlungsgerät |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
JP3555844B2 (ja) | 1999-04-09 | 2004-08-18 | 三宅 正二郎 | 摺動部材およびその製造方法 |
US20020185226A1 (en) * | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
DE10104614A1 (de) * | 2001-02-02 | 2002-08-22 | Bosch Gmbh Robert | Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung |
DE10104613A1 (de) * | 2001-02-02 | 2002-08-22 | Bosch Gmbh Robert | Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung |
US6630406B2 (en) * | 2001-05-14 | 2003-10-07 | Axcelis Technologies | Plasma ashing process |
DE10140465B4 (de) * | 2001-08-17 | 2005-06-30 | Mtu Aero Engines Gmbh | Verfahren zur Beschichtung einer Siliziumcarbidfaser |
US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
CA2489544A1 (en) * | 2002-06-14 | 2003-12-24 | Sekisui Chemical Co., Ltd. | Oxide film forming method and oxide film forming apparatus |
JP2004138128A (ja) | 2002-10-16 | 2004-05-13 | Nissan Motor Co Ltd | 自動車エンジン用摺動部材 |
US6969198B2 (en) | 2002-11-06 | 2005-11-29 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
JP3891433B2 (ja) | 2003-04-15 | 2007-03-14 | 日産自動車株式会社 | 燃料噴射弁 |
EP1479946B1 (de) | 2003-05-23 | 2012-12-19 | Nissan Motor Co., Ltd. | Kolben für eine Brennkraftmaschine |
EP1482190B1 (de) | 2003-05-27 | 2012-12-05 | Nissan Motor Company Limited | Wälzkörper |
JP2004360649A (ja) | 2003-06-06 | 2004-12-24 | Nissan Motor Co Ltd | エンジン用ピストンピン |
JP4863152B2 (ja) | 2003-07-31 | 2012-01-25 | 日産自動車株式会社 | 歯車 |
KR101003865B1 (ko) | 2003-08-06 | 2010-12-30 | 닛산 지도우샤 가부시키가이샤 | 저마찰 접동 기구, 저마찰제 조성물 및 마찰 감소 방법 |
JP2005054617A (ja) | 2003-08-08 | 2005-03-03 | Nissan Motor Co Ltd | 動弁機構 |
JP4973971B2 (ja) | 2003-08-08 | 2012-07-11 | 日産自動車株式会社 | 摺動部材 |
JP4117553B2 (ja) | 2003-08-13 | 2008-07-16 | 日産自動車株式会社 | チェーン駆動装置 |
DE602004008547T2 (de) | 2003-08-13 | 2008-05-21 | Nissan Motor Co., Ltd., Yokohama | Struktur zur Verbindung von einem Kolben mit einer Kurbelwelle |
JP4539205B2 (ja) | 2003-08-21 | 2010-09-08 | 日産自動車株式会社 | 冷媒圧縮機 |
US7771821B2 (en) | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
EP1508611B1 (de) | 2003-08-22 | 2019-04-17 | Nissan Motor Co., Ltd. | Getriebe enthaltend eine getriebeölzusammensetzung |
US7015415B2 (en) * | 2004-02-18 | 2006-03-21 | Dry Plasma Systems, Inc. | Higher power density downstream plasma |
WO2005099320A2 (de) * | 2004-04-09 | 2005-10-20 | Plasmatreat Gmbh | Verfahren und vorrichtung zum erzeugen eines niederdruckplasmas und anwendungen des niederdruckplasmas |
FR2897748B1 (fr) * | 2006-02-20 | 2008-05-16 | Snecma Services Sa | Procede de depot de barriere thermique par torche plasma |
US7479207B2 (en) * | 2006-03-15 | 2009-01-20 | Lam Research Corporation | Adjustable height PIF probe |
JP4247916B2 (ja) * | 2006-07-31 | 2009-04-02 | 株式会社日立製作所 | マイクロ波浸炭炉及び浸炭方法 |
US7582265B2 (en) * | 2007-06-28 | 2009-09-01 | Plasma Waste Recycling, Inc. | Gas conduit for plasma gasification reactors |
WO2012158532A1 (en) | 2011-05-13 | 2012-11-22 | Board Of Trustees Michigan State University | Improved microwave plasma reactors |
US8316797B2 (en) | 2008-06-16 | 2012-11-27 | Board of Trustees of Michigan State University Fraunhofer USA | Microwave plasma reactors |
US8623470B2 (en) * | 2008-06-20 | 2014-01-07 | Toyota Motor Engineering & Manufacturing North America, Inc. | Process to make core-shell structured nanoparticles |
US8931431B2 (en) | 2009-03-25 | 2015-01-13 | The Regents Of The University Of Michigan | Nozzle geometry for organic vapor jet printing |
US8906195B2 (en) * | 2009-11-18 | 2014-12-09 | Lam Research Corporation | Tuning hardware for plasma ashing apparatus and methods of use thereof |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
SG191220A1 (en) * | 2010-12-23 | 2013-07-31 | Element Six Ltd | Controlling doping of synthetic diamond material |
US9728416B2 (en) * | 2011-09-30 | 2017-08-08 | Tokyo Electron Limited | Plasma tuning rods in microwave resonator plasma sources |
US9396955B2 (en) * | 2011-09-30 | 2016-07-19 | Tokyo Electron Limited | Plasma tuning rods in microwave resonator processing systems |
JP6322117B2 (ja) * | 2014-10-10 | 2018-05-09 | スピードファム株式会社 | 局所ドライエッチング装置 |
JP6739201B2 (ja) * | 2016-03-25 | 2020-08-12 | スピードファム株式会社 | 局所ドライエッチング装置 |
ES2696227B2 (es) * | 2018-07-10 | 2019-06-12 | Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat | Fuente de iones interna para ciclotrones de baja erosion |
FI129719B (en) * | 2019-06-25 | 2022-07-29 | Picosun Oy | PLASMA IN SUBSTRATE PROCESSING EQUIPMENT |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
JPS58170536A (ja) * | 1982-03-31 | 1983-10-07 | Fujitsu Ltd | プラズマ処理方法及びその装置 |
US4691662A (en) * | 1983-02-28 | 1987-09-08 | Michigan State University | Dual plasma microwave apparatus and method for treating a surface |
EP0152511B1 (de) * | 1984-02-23 | 1990-01-31 | Toyota Jidosha Kabushiki Kaisha | Vorrichtung und Verfahren zur Plasmabehandlung von Kunstharz |
US4581100A (en) * | 1984-10-29 | 1986-04-08 | International Business Machines Corporation | Mixed excitation plasma etching system |
JPS61222534A (ja) * | 1985-03-28 | 1986-10-03 | Anelva Corp | 表面処理方法および装置 |
JPS61261481A (ja) * | 1985-05-13 | 1986-11-19 | Komatsu Ltd | 薄膜形成方法および装置 |
JPH0740566B2 (ja) * | 1986-02-04 | 1995-05-01 | 株式会社日立製作所 | プラズマ処理方法及びその装置 |
JPS63107898A (ja) * | 1986-10-23 | 1988-05-12 | Natl Inst For Res In Inorg Mater | プラズマを用いるダイヤモンドの合成法 |
-
1989
- 1989-03-23 US US07/328,017 patent/US4943345A/en not_active Expired - Lifetime
-
1990
- 1990-01-30 CA CA002008926A patent/CA2008926C/en not_active Expired - Fee Related
- 1990-03-09 JP JP2059820A patent/JP2553947B2/ja not_active Expired - Lifetime
- 1990-03-15 AT AT90104938T patent/ATE146899T1/de active
- 1990-03-15 EP EP90104938A patent/EP0388800B1/de not_active Expired - Lifetime
- 1990-03-15 DE DE199090104938T patent/DE388800T1/de active Pending
- 1990-03-15 DK DK90104938.7T patent/DK0388800T3/da active
- 1990-03-15 ES ES90104938T patent/ES2018129T3/es not_active Expired - Lifetime
- 1990-03-15 DE DE69029480T patent/DE69029480T2/de not_active Expired - Fee Related
-
1991
- 1991-10-10 GR GR90300199T patent/GR900300199T1/el unknown
Also Published As
Publication number | Publication date |
---|---|
DE69029480T2 (de) | 1997-04-10 |
US4943345A (en) | 1990-07-24 |
EP0388800A2 (de) | 1990-09-26 |
GR900300199T1 (en) | 1991-10-10 |
ES2018129T3 (es) | 1997-05-01 |
ES2018129A4 (es) | 1991-04-01 |
CA2008926C (en) | 1994-03-29 |
JPH02282482A (ja) | 1990-11-20 |
EP0388800A3 (de) | 1991-07-03 |
ATE146899T1 (de) | 1997-01-15 |
DE69029480D1 (de) | 1997-02-06 |
JP2553947B2 (ja) | 1996-11-13 |
CA2008926A1 (en) | 1990-09-23 |
EP0388800B1 (de) | 1996-12-27 |
DK0388800T3 (da) | 1997-06-09 |
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