DE3888465D1 - Flüssigkristallsubstrat mit aktiver Matrix. - Google Patents

Flüssigkristallsubstrat mit aktiver Matrix.

Info

Publication number
DE3888465D1
DE3888465D1 DE88310967T DE3888465T DE3888465D1 DE 3888465 D1 DE3888465 D1 DE 3888465D1 DE 88310967 T DE88310967 T DE 88310967T DE 3888465 T DE3888465 T DE 3888465T DE 3888465 D1 DE3888465 D1 DE 3888465D1
Authority
DE
Germany
Prior art keywords
liquid crystal
active matrix
crystal substrate
substrate
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88310967T
Other languages
English (en)
Other versions
DE3888465T2 (de
Inventor
Mikio Katayama
Hirohisa Tanaka
Yasunori Shimada
Hiroshi Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP29246587A external-priority patent/JPH0680449B2/ja
Priority claimed from JP29246987A external-priority patent/JPH0690373B2/ja
Priority claimed from JP62292467A external-priority patent/JPH01134343A/ja
Priority claimed from JP62292468A external-priority patent/JPH01134344A/ja
Priority claimed from JP62292466A external-priority patent/JPH01134342A/ja
Priority claimed from JP62294888A external-priority patent/JPH01136123A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3888465D1 publication Critical patent/DE3888465D1/de
Application granted granted Critical
Publication of DE3888465T2 publication Critical patent/DE3888465T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
DE3888465T 1987-11-19 1988-11-21 Flüssigkristallsubstrat mit aktiver Matrix. Expired - Fee Related DE3888465T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP29246587A JPH0680449B2 (ja) 1987-11-19 1987-11-19 アクティブマトリクス基板
JP29246987A JPH0690373B2 (ja) 1987-11-19 1987-11-19 アクティブマトリクス基板
JP62292467A JPH01134343A (ja) 1987-11-19 1987-11-19 アクティブマトリクス基板
JP62292468A JPH01134344A (ja) 1987-11-19 1987-11-19 アクティブマトリクス基板
JP62292466A JPH01134342A (ja) 1987-11-19 1987-11-19 アクティブマトリクス基板
JP62294888A JPH01136123A (ja) 1987-11-21 1987-11-21 アクティブマトリックス基板

Publications (2)

Publication Number Publication Date
DE3888465D1 true DE3888465D1 (de) 1994-04-21
DE3888465T2 DE3888465T2 (de) 1994-06-30

Family

ID=27554478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888465T Expired - Fee Related DE3888465T2 (de) 1987-11-19 1988-11-21 Flüssigkristallsubstrat mit aktiver Matrix.

Country Status (3)

Country Link
US (1) US5075674A (de)
EP (1) EP0318224B1 (de)
DE (1) DE3888465T2 (de)

Families Citing this family (48)

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JPH0213928A (ja) * 1988-07-01 1990-01-18 Sharp Corp 薄膜トランジスタアレイ
US5062690A (en) * 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
US5212574A (en) * 1989-07-05 1993-05-18 Sharp Kabushiki Kaisha Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines
DE69031450T2 (de) * 1989-07-05 1998-03-19 Sharp Kk Anzeigetafel mit aktiver Matrix
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
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JP2873632B2 (ja) * 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
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JP2717237B2 (ja) 1991-05-16 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
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JP3507117B2 (ja) * 1993-02-26 2004-03-15 キヤノン株式会社 Ｔｆｔ基板及び該基板を有する液晶表示装置
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US5555001A (en) * 1994-03-08 1996-09-10 Prime View Hk Limited Redundant scheme for LCD display with integrated data driving circuit
JPH08184853A (ja) * 1994-12-27 1996-07-16 Sharp Corp アクティブマトリクス基板の製造方法およびアクティブマトリクス基板
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5650358A (en) * 1995-08-28 1997-07-22 Ois Optical Imaging Systems, Inc. Method of making a TFT having a reduced channel length
US5773845A (en) * 1995-11-09 1998-06-30 Lg Electronics Inc. Liquid crystal display device with decreased line width and method of forming the same
KR100195276B1 (ko) * 1995-12-01 1999-06-15 윤종용 구동회로를 내장한 액정 표시장치 및 그 구동방법
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3680527B2 (ja) * 1997-01-31 2005-08-10 富士通ディスプレイテクノロジーズ株式会社 薄膜トランジスタマトリクス基板及びその製造方法
US6222514B1 (en) * 1997-06-10 2001-04-24 Deluca Michael J. Fault tolerant intersecting beam display panel
CN1139837C (zh) * 1998-10-01 2004-02-25 三星电子株式会社 液晶显示器用薄膜晶体管阵列基板及其制造方法
US6395586B1 (en) * 1999-02-03 2002-05-28 Industrial Technology Research Institute Method for fabricating high aperture ratio TFT's and devices formed
KR100290015B1 (ko) * 1999-05-13 2001-05-15 구본준, 론 위라하디락사 박막트랜지스터형 광 감지센서와 그 제조방법
JP2001051303A (ja) 1999-08-05 2001-02-23 Fujitsu Ltd 液晶表示装置及びその製造方法
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7189997B2 (en) 2001-03-27 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
GB0126720D0 (en) * 2001-11-07 2002-01-02 Koninkl Philips Electronics Nv Active matrix pixel device
KR100862240B1 (ko) * 2002-07-31 2008-10-09 엘지디스플레이 주식회사 반사형 액정표시장치와 그 제조방법
KR100460979B1 (ko) * 2002-12-31 2004-12-09 엘지.필립스 엘시디 주식회사 반사형 액정표시장치용 어레이기판과 그 제조방법
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI225182B (en) * 2003-10-27 2004-12-11 Au Optronics Corp Flat panel display device with a structure to prevent an electrode line from opening
JP4444035B2 (ja) * 2004-04-21 2010-03-31 シャープ株式会社 表示装置用アクティブマトリクス基板およびその製造方法
JP2006337819A (ja) * 2005-06-03 2006-12-14 Canon Inc 表示装置およびその駆動方法
CN100592181C (zh) * 2007-05-30 2010-02-24 北京京东方光电科技有限公司 一种可修复的像素结构
US7977678B2 (en) * 2007-12-21 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP5245879B2 (ja) 2008-03-26 2013-07-24 ソニー株式会社 画像表示装置及び短絡事故の修復方法
TWI453910B (zh) 2009-02-04 2014-09-21 Sony Corp Image display device and repair method of short circuit accident

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Also Published As

Publication number Publication date
EP0318224B1 (de) 1994-03-16
EP0318224A2 (de) 1989-05-31
US5075674A (en) 1991-12-24
EP0318224A3 (en) 1990-04-25
DE3888465T2 (de) 1994-06-30

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee