DE50110399D1 - Verfahren zur Herstellung eines Bipolartransistors - Google Patents

Verfahren zur Herstellung eines Bipolartransistors

Info

Publication number
DE50110399D1
DE50110399D1 DE50110399T DE50110399T DE50110399D1 DE 50110399 D1 DE50110399 D1 DE 50110399D1 DE 50110399 T DE50110399 T DE 50110399T DE 50110399 T DE50110399 T DE 50110399T DE 50110399 D1 DE50110399 D1 DE 50110399D1
Authority
DE
Germany
Prior art keywords
layer
insulating layer
silicon
producing
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50110399T
Other languages
English (en)
Inventor
Karl-Heinz Mueller
Konrad Wolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE50110399D1 publication Critical patent/DE50110399D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
DE50110399T 2000-05-05 2001-05-04 Verfahren zur Herstellung eines Bipolartransistors Expired - Lifetime DE50110399D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00109644A EP1152462A1 (de) 2000-05-05 2000-05-05 Verfahren zur Herstellung eines Bipolartransistors
PCT/EP2001/005036 WO2001086711A1 (de) 2000-05-05 2001-05-04 Verfahren zur herstellung eines bipolartransistors

Publications (1)

Publication Number Publication Date
DE50110399D1 true DE50110399D1 (de) 2006-08-17

Family

ID=8168634

Family Applications (1)

Application Number Title Priority Date Filing Date
DE50110399T Expired - Lifetime DE50110399D1 (de) 2000-05-05 2001-05-04 Verfahren zur Herstellung eines Bipolartransistors

Country Status (5)

Country Link
US (1) US6855612B2 (de)
EP (2) EP1152462A1 (de)
AT (1) ATE332573T1 (de)
DE (1) DE50110399D1 (de)
WO (1) WO2001086711A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10159414A1 (de) 2001-12-04 2003-06-18 Infineon Technologies Ag Bipolar-Transistor und Verfahren zum Herstellen desselben
US7029964B2 (en) * 2003-11-13 2006-04-18 International Business Machines Corporation Method of manufacturing a strained silicon on a SiGe on SOI substrate
US7338848B1 (en) * 2004-10-20 2008-03-04 Newport Fab, Llc Method for opto-electronic integration on a SOI substrate and related structure
US7598539B2 (en) * 2007-06-01 2009-10-06 Infineon Technologies Ag Heterojunction bipolar transistor and method for making same
US9356097B2 (en) 2013-06-25 2016-05-31 Globalfoundries Inc. Method of forming a bipolar transistor with maskless self-aligned emitter
US10446644B2 (en) * 2015-06-22 2019-10-15 Globalfoundries Inc. Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851362A (en) * 1987-08-25 1989-07-25 Oki Electric Industry Co., Ltd. Method for manufacturing a semiconductor device
DE3877121D1 (de) * 1987-10-23 1993-02-11 Siemens Ag Verfahren zur herstellung eines planaren selbstjustierten heterobipolartransistors.
US4892837A (en) * 1987-12-04 1990-01-09 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device
US5342797A (en) * 1988-10-03 1994-08-30 National Semiconductor Corporation Method for forming a vertical power MOSFET having doped oxide side wall spacers
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
US5101256A (en) * 1989-02-13 1992-03-31 International Business Machines Corporation Bipolar transistor with ultra-thin epitaxial base and method of fabricating same
US5008207A (en) * 1989-09-11 1991-04-16 International Business Machines Corporation Method of fabricating a narrow base transistor
EP0418421B1 (de) * 1989-09-22 1998-08-12 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Bipolartransistors mit verminderter Basis/Kollektor-Kapazität
DE59209978D1 (de) * 1991-09-23 2003-03-27 Infineon Technologies Ag Verfahren zur Herstellung eines MOS-Transistors
US5340754A (en) * 1992-09-02 1994-08-23 Motorla, Inc. Method for forming a transistor having a dynamic connection between a substrate and a channel region
US5324673A (en) * 1992-11-19 1994-06-28 Motorola, Inc. Method of formation of vertical transistor
EP0600276B1 (de) * 1992-12-04 1998-08-05 Siemens Aktiengesellschaft Verfahren zur Herstellung eines seitlich begrenzten, einkristallinen Gebietes mittels selektiver Epitaxie und dessen Anwendung zur Herstellung eines Bipolartransistors sowie eines MOS-transistors
JPH0786301A (ja) * 1993-09-14 1995-03-31 Oki Electric Ind Co Ltd バイポーラトランジスタの製造方法
JP2669377B2 (ja) * 1995-01-30 1997-10-27 日本電気株式会社 半導体装置の製造方法
KR100275544B1 (ko) * 1995-12-20 2001-01-15 이계철 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법
US5773350A (en) * 1997-01-28 1998-06-30 National Semiconductor Corporation Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base

Also Published As

Publication number Publication date
EP1279191B1 (de) 2006-07-05
EP1152462A1 (de) 2001-11-07
US20030162350A1 (en) 2003-08-28
US6855612B2 (en) 2005-02-15
ATE332573T1 (de) 2006-07-15
WO2001086711A1 (de) 2001-11-15
EP1279191A1 (de) 2003-01-29

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