DE502004011649D1 - Verfahren zur behandlung von substratoberflächen - Google Patents

Verfahren zur behandlung von substratoberflächen

Info

Publication number
DE502004011649D1
DE502004011649D1 DE502004011649T DE502004011649T DE502004011649D1 DE 502004011649 D1 DE502004011649 D1 DE 502004011649D1 DE 502004011649 T DE502004011649 T DE 502004011649T DE 502004011649 T DE502004011649 T DE 502004011649T DE 502004011649 D1 DE502004011649 D1 DE 502004011649D1
Authority
DE
Germany
Prior art keywords
substrate surfaces
treating substrate
relates
treating
modifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE502004011649T
Other languages
English (en)
Inventor
Franck Delahaye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rena Sondermaschinen GmbH
Original Assignee
Rena Sondermaschinen GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35056453&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE502004011649(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rena Sondermaschinen GmbH filed Critical Rena Sondermaschinen GmbH
Publication of DE502004011649D1 publication Critical patent/DE502004011649D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
DE502004011649T 2004-03-22 2004-03-22 Verfahren zur behandlung von substratoberflächen Expired - Lifetime DE502004011649D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2004/000597 WO2005093788A1 (de) 2004-03-22 2004-03-22 Verfahren zur behandlung von substratoberflächen

Publications (1)

Publication Number Publication Date
DE502004011649D1 true DE502004011649D1 (de) 2010-10-21

Family

ID=35056453

Family Applications (2)

Application Number Title Priority Date Filing Date
DE502004011649T Expired - Lifetime DE502004011649D1 (de) 2004-03-22 2004-03-22 Verfahren zur behandlung von substratoberflächen
DE112004002879T Withdrawn DE112004002879A5 (de) 2004-03-22 2004-03-22 Verfahren zur Behandlung von Substratoberflächen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112004002879T Withdrawn DE112004002879A5 (de) 2004-03-22 2004-03-22 Verfahren zur Behandlung von Substratoberflächen

Country Status (9)

Country Link
US (1) US7943526B2 (de)
EP (1) EP1733418B2 (de)
JP (1) JP4780800B2 (de)
KR (1) KR101046287B1 (de)
CN (1) CN101015037B (de)
AT (1) ATE480868T1 (de)
DE (2) DE502004011649D1 (de)
ES (1) ES2352674T3 (de)
WO (1) WO2005093788A1 (de)

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DE102005062528A1 (de) * 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
DE102006033354B4 (de) * 2006-07-19 2012-01-12 Höllmüller Maschinenbau GmbH Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102006049488A1 (de) 2006-10-17 2008-04-30 Höllmüller Maschinenbau GmbH Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007004060B4 (de) * 2007-01-22 2013-03-21 Gp Solar Gmbh Verwendung einer Ätzlösung aufweisend Wasser, Salpetersäure und Schwefelsäure und Ätzverfahren
KR20100106321A (ko) * 2007-10-27 2010-10-01 하이퍼플로 엘엘씨 사이클 핵형성 공정
DE102007054093B3 (de) * 2007-11-13 2009-07-23 Rena Sondermaschinen Gmbh Vorrichtung und Verfahren zum Transport von flachem Gut in Durchlaufanlagen
DE102008026199B3 (de) * 2008-05-30 2009-10-08 Rena Gmbh Vorrichtung und Verfahren zur elektrischen Kontaktierung von ebenem Gut in Durchlaufanlagen
WO2010025125A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-sided textured sheet wafer and manufactoring method therefore
DE102008037404A1 (de) 2008-09-30 2010-04-01 Schott Solar Ag Verfahren zur chemischen Behandlung eines Substrats
WO2011035748A1 (de) * 2009-09-22 2011-03-31 Rena Gmbh Verfahren und vorrichtung zum rückätzen einer halbleiterschicht
DE102009050845A1 (de) * 2009-10-19 2011-04-21 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberfläche eines Substrats
CN102714132A (zh) 2009-12-18 2012-10-03 睿纳有限责任公司 用于去除衬底层的方法
DE102009059704A1 (de) 2009-12-18 2011-06-22 RENA GmbH, 78148 Vorrichtung zum Transportieren von flachen Gegenständen
WO2012020274A1 (en) 2010-08-10 2012-02-16 Rena Gmbh Process and apparatus for texturizing a flat semiconductor substrate
TW201218407A (en) 2010-10-22 2012-05-01 Wakom Semiconductor Corp Method for fabricating a silicon wafer solar cell
CN102185011A (zh) * 2010-12-02 2011-09-14 江阴浚鑫科技有限公司 太阳能电池片的制绒方法
WO2012143460A2 (de) 2011-04-19 2012-10-26 Schott Solar Ag Verfahren zur herstellung einer solarzelle
CN102891078A (zh) 2011-07-18 2013-01-23 商先创光伏股份有限公司 用于衬底圆片的单面湿处理的装置和方法
DE102011109568A1 (de) 2011-08-05 2013-02-07 Rena Gmbh Abluftsystem und Verfahren dazu
DE102011111175B4 (de) * 2011-08-25 2014-01-09 Rena Gmbh Verfahren und Vorrichtung zur Flüssigkeits-Niveauregelung bei Durchlaufanlagen
DE102011118441B8 (de) 2011-11-12 2018-10-04 RENA Technologies GmbH Anlage und Verfahren zur Behandlung von flachen Substraten
DE102012210618A1 (de) * 2012-01-26 2013-08-01 Singulus Stangl Solar Gmbh Vorrichtung und Verfahren zum Behandeln von plattenförmigem Prozessgut
JPWO2013114589A1 (ja) * 2012-02-01 2015-05-11 三菱電機株式会社 光起電力装置の製造方法および光起電力装置の製造装置
US9246043B2 (en) 2012-02-01 2016-01-26 Mitsubishi Electric Corporation Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device
NL2008970C2 (en) 2012-06-08 2013-12-10 Tempress Ip B V Method of manufacturing a solar cell and solar cell thus obtained.
DE102012209902A1 (de) 2012-06-13 2013-12-19 Singulus Stangl Solar Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleiterstäben mit einer Flüssigkeit oder einem Gas
DE102012107372B4 (de) * 2012-08-10 2017-03-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Alkalischer Ätzprozess und Vorrichtung zur Durchführung des Verfahrens
DE202012103661U1 (de) 2012-09-24 2012-10-26 Rena Gmbh Vorrichtung zur nasschemischen Behandlung und zum Schutz flacher Substrate
CN104037257B (zh) * 2013-03-08 2016-12-28 北京北方微电子基地设备工艺研究中心有限责任公司 太阳能电池及其制造方法、单面抛光设备
DE102013218693A1 (de) 2013-09-18 2015-03-19 lP RENA GmbH Vorrichtung und Verfahren zur asymmetrischen alkalischen Textur von Oberflächen
DE102014222737B4 (de) 2014-05-16 2021-06-10 Singulus Stangl Solar Gmbh Vorrichtung zum Behandeln der Unterseite und der Kanten eines Guts mit einer Flüssigkeit und Verfahren zum Herstellen eines auf einer Unterseite mit einer Flüssigkeit behandelten Guts
DE102014117276A1 (de) * 2014-11-25 2016-05-25 Rena Gmbh Verfahren und Vorrichtung zur unterseitigen Behandlung eines Substrats
DE102016210883A1 (de) 2016-06-17 2017-12-21 Singulus Technologies Ag Vorrichtung und Verfahren zur Behandlung von Substraten unter Verwendung einer Auflagerolle mit porösem Material
CN106216274A (zh) * 2016-07-27 2016-12-14 陕西彩虹电子玻璃有限公司 一种玻璃基板边部刷洗装置及其控制方法
DE202017102678U1 (de) 2016-12-08 2017-05-26 RENA Technologies GmbH Transportrolle, Transportvorrichtung sowie Substratbehandlungsanlage
DE102017110297A1 (de) 2016-12-30 2018-07-05 RENA Technologies GmbH Verfahren und Vorrichtung zur Behandlung einer Objektoberfläche mittels einer Behandlungslösung

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Also Published As

Publication number Publication date
KR101046287B1 (ko) 2011-07-04
EP1733418B1 (de) 2010-09-08
JP4780800B2 (ja) 2011-09-28
WO2005093788A1 (de) 2005-10-06
CN101015037A (zh) 2007-08-08
US7943526B2 (en) 2011-05-17
EP1733418B2 (de) 2018-01-17
KR20070005685A (ko) 2007-01-10
DE112004002879A5 (de) 2007-05-24
EP1733418A1 (de) 2006-12-20
CN101015037B (zh) 2010-04-21
JP2007529912A (ja) 2007-10-25
ES2352674T3 (es) 2011-02-22
ATE480868T1 (de) 2010-09-15
US20080233760A1 (en) 2008-09-25

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