DE50205651D1 - Verfahren zur herstellung eines mosfets mit sehr kleiner kanallänge - Google Patents
Verfahren zur herstellung eines mosfets mit sehr kleiner kanallängeInfo
- Publication number
- DE50205651D1 DE50205651D1 DE50205651T DE50205651T DE50205651D1 DE 50205651 D1 DE50205651 D1 DE 50205651D1 DE 50205651 T DE50205651 T DE 50205651T DE 50205651 T DE50205651 T DE 50205651T DE 50205651 D1 DE50205651 D1 DE 50205651D1
- Authority
- DE
- Germany
- Prior art keywords
- mosfet
- producing
- channel length
- small channel
- small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE50205651T DE50205651D1 (de) | 2001-03-26 | 2002-02-28 | Verfahren zur herstellung eines mosfets mit sehr kleiner kanallänge |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10114778A DE10114778A1 (de) | 2001-03-26 | 2001-03-26 | Verfahren zur Herstellung eines MOSFETs mit sehr kleiner Kanallänge |
DE50205651T DE50205651D1 (de) | 2001-03-26 | 2002-02-28 | Verfahren zur herstellung eines mosfets mit sehr kleiner kanallänge |
PCT/DE2002/000732 WO2002078058A2 (de) | 2001-03-26 | 2002-02-28 | Verfahren zur herstellung eines mosfets mit sehr kleiner kanallänge |
Publications (1)
Publication Number | Publication Date |
---|---|
DE50205651D1 true DE50205651D1 (de) | 2006-04-06 |
Family
ID=7679066
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10114778A Ceased DE10114778A1 (de) | 2001-03-26 | 2001-03-26 | Verfahren zur Herstellung eines MOSFETs mit sehr kleiner Kanallänge |
DE50205651T Expired - Lifetime DE50205651D1 (de) | 2001-03-26 | 2002-02-28 | Verfahren zur herstellung eines mosfets mit sehr kleiner kanallänge |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10114778A Ceased DE10114778A1 (de) | 2001-03-26 | 2001-03-26 | Verfahren zur Herstellung eines MOSFETs mit sehr kleiner Kanallänge |
Country Status (7)
Country | Link |
---|---|
US (1) | US6835612B2 (de) |
EP (1) | EP1374293B1 (de) |
JP (1) | JP2004532518A (de) |
KR (1) | KR20030083012A (de) |
DE (2) | DE10114778A1 (de) |
TW (1) | TWI248649B (de) |
WO (1) | WO2002078058A2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7217665B2 (en) | 2002-11-20 | 2007-05-15 | Applied Materials, Inc. | Method of plasma etching high-K dielectric materials with high selectivity to underlying layers |
US6656824B1 (en) * | 2002-11-08 | 2003-12-02 | International Business Machines Corporation | Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch |
JP2007157739A (ja) * | 2005-11-30 | 2007-06-21 | Fujitsu Ltd | Cmos半導体素子とその製造方法 |
JP5579362B2 (ja) * | 2007-10-19 | 2014-08-27 | ピーエスフォー ルクスコ エスエイアールエル | 縦型相変化メモリ装置の製造方法 |
CN103578944B (zh) * | 2012-07-18 | 2016-08-03 | 中国科学院微电子研究所 | 半导体器件制造方法 |
KR101851259B1 (ko) * | 2013-11-05 | 2018-06-11 | 삼성전자 주식회사 | 반도체 장치 및 이의 제조 방법 |
DE102015117582A1 (de) * | 2015-10-15 | 2017-04-20 | Infineon Technologies Austria Ag | +Verfahren zum Bilden von Halbleiterbauelementen |
JP6237974B1 (ja) * | 2017-04-19 | 2017-11-29 | 三菱電機株式会社 | 半導体装置の製造方法 |
US10811320B2 (en) * | 2017-09-29 | 2020-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Footing removal in cut-metal process |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6344768A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
EP0328350B1 (de) * | 1988-02-09 | 1999-04-28 | Fujitsu Limited | Trockenätzen mit Wasserstoffbromid oder Brom |
US5089863A (en) * | 1988-09-08 | 1992-02-18 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with T-shaped gate electrode |
JP2702338B2 (ja) | 1991-10-14 | 1998-01-21 | 三菱電機株式会社 | 半導体装置、及びその製造方法 |
DE4234777A1 (de) * | 1992-10-15 | 1994-04-21 | Daimler Benz Ag | Verfahren zur naßchemischen Strukturierung von Gate-Elektroden |
DE4239528C2 (de) * | 1992-11-25 | 1999-02-25 | Amazonen Werke Dreyer H | Kupplungsvorrichtung |
US5670018A (en) * | 1995-04-27 | 1997-09-23 | Siemens Aktiengesellschaft | Isotropic silicon etch process that is highly selective to tungsten |
KR100207472B1 (ko) * | 1996-06-07 | 1999-07-15 | 윤종용 | 티타늄 질화막 적층 구조의 게이트 전극을 갖춘 반도체장치 및 그 제조 방법 |
TW381309B (en) * | 1998-09-19 | 2000-02-01 | United Microelectronics Corp | Manufacturing method for gates |
FR2791177A1 (fr) * | 1999-03-19 | 2000-09-22 | France Telecom | Procede de realisation d'une grille en forme de champignon ou grille en "t" |
US6891235B1 (en) * | 2000-11-15 | 2005-05-10 | International Business Machines Corporation | FET with T-shaped gate |
-
2001
- 2001-03-26 DE DE10114778A patent/DE10114778A1/de not_active Ceased
-
2002
- 2002-02-28 KR KR10-2003-7012498A patent/KR20030083012A/ko not_active Application Discontinuation
- 2002-02-28 WO PCT/DE2002/000732 patent/WO2002078058A2/de active IP Right Grant
- 2002-02-28 JP JP2002575995A patent/JP2004532518A/ja active Pending
- 2002-02-28 EP EP02719646A patent/EP1374293B1/de not_active Expired - Lifetime
- 2002-02-28 DE DE50205651T patent/DE50205651D1/de not_active Expired - Lifetime
- 2002-03-08 TW TW091104389A patent/TWI248649B/zh not_active IP Right Cessation
-
2003
- 2003-09-26 US US10/673,705 patent/US6835612B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040157380A1 (en) | 2004-08-12 |
TWI248649B (en) | 2006-02-01 |
JP2004532518A (ja) | 2004-10-21 |
WO2002078058A3 (de) | 2003-06-26 |
DE10114778A1 (de) | 2002-10-17 |
US6835612B2 (en) | 2004-12-28 |
EP1374293B1 (de) | 2006-01-18 |
WO2002078058A2 (de) | 2002-10-03 |
EP1374293A2 (de) | 2004-01-02 |
KR20030083012A (ko) | 2003-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |