DE50208916D1 - Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung - Google Patents
Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendungInfo
- Publication number
- DE50208916D1 DE50208916D1 DE50208916T DE50208916T DE50208916D1 DE 50208916 D1 DE50208916 D1 DE 50208916D1 DE 50208916 T DE50208916 T DE 50208916T DE 50208916 T DE50208916 T DE 50208916T DE 50208916 D1 DE50208916 D1 DE 50208916D1
- Authority
- DE
- Germany
- Prior art keywords
- high frequency
- semiconductor switching
- frequency oscillator
- integrated semiconductor
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
- H01P7/065—Cavity resonators integrated in a substrate
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE50208916T DE50208916D1 (de) | 2001-11-09 | 2002-08-09 | Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10156255A DE10156255A1 (de) | 2001-11-09 | 2001-11-09 | Hochfrequenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung |
PCT/DE2002/002940 WO2003041173A1 (de) | 2001-11-09 | 2002-08-09 | Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung |
DE50208916T DE50208916D1 (de) | 2001-11-09 | 2002-08-09 | Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE50208916D1 true DE50208916D1 (de) | 2007-01-18 |
Family
ID=7705942
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10156255A Withdrawn DE10156255A1 (de) | 2001-11-09 | 2001-11-09 | Hochfrequenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung |
DE50208916T Expired - Fee Related DE50208916D1 (de) | 2001-11-09 | 2002-08-09 | Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung |
DE10295163T Expired - Lifetime DE10295163D2 (de) | 2001-11-09 | 2002-08-09 | Hochfreqenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10156255A Withdrawn DE10156255A1 (de) | 2001-11-09 | 2001-11-09 | Hochfrequenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10295163T Expired - Lifetime DE10295163D2 (de) | 2001-11-09 | 2002-08-09 | Hochfreqenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6909163B2 (de) |
EP (1) | EP1449255B1 (de) |
JP (1) | JP2005509296A (de) |
KR (1) | KR20040053236A (de) |
DE (3) | DE10156255A1 (de) |
ES (1) | ES2278038T3 (de) |
HU (1) | HUP0302318A3 (de) |
WO (1) | WO2003041173A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10156258A1 (de) * | 2001-11-09 | 2003-05-28 | Bosch Gmbh Robert | Integriertes Halbleiterbauelement für Hochfrequenzmessungen und dessen Verwendung |
DE10156257A1 (de) * | 2001-11-09 | 2003-05-28 | Bosch Gmbh Robert | Mikromechanischer Resonator |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4211987A (en) * | 1977-11-30 | 1980-07-08 | Harris Corporation | Cavity excitation utilizing microstrip, strip, or slot line |
FR2616273B1 (fr) | 1987-06-05 | 1989-10-20 | Thomson Csf | Resonateur hyperfrequence en mode de chuchotement en galerie |
DE4431071C2 (de) * | 1994-09-01 | 2002-04-18 | Daimler Chrysler Ag | Resonatoranordnung |
DE4432727C1 (de) * | 1994-09-14 | 1996-03-14 | Siemens Ag | Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement |
US6275122B1 (en) * | 1999-08-17 | 2001-08-14 | International Business Machines Corporation | Encapsulated MEMS band-pass filter for integrated circuits |
DE19956903B4 (de) * | 1999-11-26 | 2009-04-09 | United Monolithic Semiconductors Gmbh | HF-Halbleiterbauelement und Verfahren zur Integration von HF-Dioden |
US6903459B2 (en) * | 2001-05-17 | 2005-06-07 | Matsushita Electric Industrial Co., Ltd. | High frequency semiconductor device |
-
2001
- 2001-11-09 DE DE10156255A patent/DE10156255A1/de not_active Withdrawn
-
2002
- 2002-08-09 KR KR10-2004-7006504A patent/KR20040053236A/ko active IP Right Grant
- 2002-08-09 HU HU0302318A patent/HUP0302318A3/hu unknown
- 2002-08-09 US US10/250,743 patent/US6909163B2/en not_active Expired - Fee Related
- 2002-08-09 JP JP2003543106A patent/JP2005509296A/ja active Pending
- 2002-08-09 WO PCT/DE2002/002940 patent/WO2003041173A1/de active IP Right Grant
- 2002-08-09 ES ES02754516T patent/ES2278038T3/es not_active Expired - Lifetime
- 2002-08-09 EP EP02754516A patent/EP1449255B1/de not_active Expired - Lifetime
- 2002-08-09 DE DE50208916T patent/DE50208916D1/de not_active Expired - Fee Related
- 2002-08-09 DE DE10295163T patent/DE10295163D2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040046234A1 (en) | 2004-03-11 |
ES2278038T3 (es) | 2007-08-01 |
EP1449255A1 (de) | 2004-08-25 |
US6909163B2 (en) | 2005-06-21 |
HUP0302318A3 (en) | 2006-01-30 |
EP1449255B1 (de) | 2006-12-06 |
WO2003041173A1 (de) | 2003-05-15 |
KR20040053236A (ko) | 2004-06-23 |
HUP0302318A2 (hu) | 2003-10-28 |
JP2005509296A (ja) | 2005-04-07 |
DE10156255A1 (de) | 2003-05-22 |
DE10295163D2 (de) | 2004-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |