DE50208916D1 - Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung - Google Patents

Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung

Info

Publication number
DE50208916D1
DE50208916D1 DE50208916T DE50208916T DE50208916D1 DE 50208916 D1 DE50208916 D1 DE 50208916D1 DE 50208916 T DE50208916 T DE 50208916T DE 50208916 T DE50208916 T DE 50208916T DE 50208916 D1 DE50208916 D1 DE 50208916D1
Authority
DE
Germany
Prior art keywords
high frequency
semiconductor switching
frequency oscillator
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE50208916T
Other languages
English (en)
Inventor
Heinz Pfizenmaier
Juergen Hasch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE50208916T priority Critical patent/DE50208916D1/de
Application granted granted Critical
Publication of DE50208916D1 publication Critical patent/DE50208916D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/10Dielectric resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/06Cavity resonators
    • H01P7/065Cavity resonators integrated in a substrate
DE50208916T 2001-11-09 2002-08-09 Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung Expired - Fee Related DE50208916D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50208916T DE50208916D1 (de) 2001-11-09 2002-08-09 Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10156255A DE10156255A1 (de) 2001-11-09 2001-11-09 Hochfrequenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung
PCT/DE2002/002940 WO2003041173A1 (de) 2001-11-09 2002-08-09 Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung
DE50208916T DE50208916D1 (de) 2001-11-09 2002-08-09 Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung

Publications (1)

Publication Number Publication Date
DE50208916D1 true DE50208916D1 (de) 2007-01-18

Family

ID=7705942

Family Applications (3)

Application Number Title Priority Date Filing Date
DE10156255A Withdrawn DE10156255A1 (de) 2001-11-09 2001-11-09 Hochfrequenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung
DE50208916T Expired - Fee Related DE50208916D1 (de) 2001-11-09 2002-08-09 Hochfrequenz-oszillator für eine integrierte halbleiterschaltung und dessen verwendung
DE10295163T Expired - Lifetime DE10295163D2 (de) 2001-11-09 2002-08-09 Hochfreqenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10156255A Withdrawn DE10156255A1 (de) 2001-11-09 2001-11-09 Hochfrequenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE10295163T Expired - Lifetime DE10295163D2 (de) 2001-11-09 2002-08-09 Hochfreqenz-Oszillator für eine integrierte Halbleiterschaltung und dessen Verwendung

Country Status (8)

Country Link
US (1) US6909163B2 (de)
EP (1) EP1449255B1 (de)
JP (1) JP2005509296A (de)
KR (1) KR20040053236A (de)
DE (3) DE10156255A1 (de)
ES (1) ES2278038T3 (de)
HU (1) HUP0302318A3 (de)
WO (1) WO2003041173A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10156258A1 (de) * 2001-11-09 2003-05-28 Bosch Gmbh Robert Integriertes Halbleiterbauelement für Hochfrequenzmessungen und dessen Verwendung
DE10156257A1 (de) * 2001-11-09 2003-05-28 Bosch Gmbh Robert Mikromechanischer Resonator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211987A (en) * 1977-11-30 1980-07-08 Harris Corporation Cavity excitation utilizing microstrip, strip, or slot line
FR2616273B1 (fr) 1987-06-05 1989-10-20 Thomson Csf Resonateur hyperfrequence en mode de chuchotement en galerie
DE4431071C2 (de) * 1994-09-01 2002-04-18 Daimler Chrysler Ag Resonatoranordnung
DE4432727C1 (de) * 1994-09-14 1996-03-14 Siemens Ag Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement
US6275122B1 (en) * 1999-08-17 2001-08-14 International Business Machines Corporation Encapsulated MEMS band-pass filter for integrated circuits
DE19956903B4 (de) * 1999-11-26 2009-04-09 United Monolithic Semiconductors Gmbh HF-Halbleiterbauelement und Verfahren zur Integration von HF-Dioden
US6903459B2 (en) * 2001-05-17 2005-06-07 Matsushita Electric Industrial Co., Ltd. High frequency semiconductor device

Also Published As

Publication number Publication date
US20040046234A1 (en) 2004-03-11
ES2278038T3 (es) 2007-08-01
EP1449255A1 (de) 2004-08-25
US6909163B2 (en) 2005-06-21
HUP0302318A3 (en) 2006-01-30
EP1449255B1 (de) 2006-12-06
WO2003041173A1 (de) 2003-05-15
KR20040053236A (ko) 2004-06-23
HUP0302318A2 (hu) 2003-10-28
JP2005509296A (ja) 2005-04-07
DE10156255A1 (de) 2003-05-22
DE10295163D2 (de) 2004-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee