DE50313066D1 - Optisch gepumpte halbleiterlaservorrichtung - Google Patents

Optisch gepumpte halbleiterlaservorrichtung

Info

Publication number
DE50313066D1
DE50313066D1 DE50313066T DE50313066T DE50313066D1 DE 50313066 D1 DE50313066 D1 DE 50313066D1 DE 50313066 T DE50313066 T DE 50313066T DE 50313066 T DE50313066 T DE 50313066T DE 50313066 D1 DE50313066 D1 DE 50313066D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
optically pumped
pumped semiconductor
optically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50313066T
Other languages
English (en)
Inventor
Stephan Lutgen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE50313066T priority Critical patent/DE50313066D1/de
Application granted granted Critical
Publication of DE50313066D1 publication Critical patent/DE50313066D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
DE50313066T 2002-05-03 2003-05-05 Optisch gepumpte halbleiterlaservorrichtung Expired - Lifetime DE50313066D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50313066T DE50313066D1 (de) 2002-05-03 2003-05-05 Optisch gepumpte halbleiterlaservorrichtung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10219907 2002-05-03
PCT/DE2003/001426 WO2003094311A2 (de) 2002-05-03 2003-05-05 Optisch gepumpte halbleiterlaservorrichtung
DE50313066T DE50313066D1 (de) 2002-05-03 2003-05-05 Optisch gepumpte halbleiterlaservorrichtung

Publications (1)

Publication Number Publication Date
DE50313066D1 true DE50313066D1 (de) 2010-10-21

Family

ID=29285087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE50313066T Expired - Lifetime DE50313066D1 (de) 2002-05-03 2003-05-05 Optisch gepumpte halbleiterlaservorrichtung

Country Status (7)

Country Link
US (1) US7551660B2 (de)
EP (1) EP1502336B1 (de)
JP (1) JP4504181B2 (de)
CN (1) CN100409514C (de)
DE (1) DE50313066D1 (de)
TW (1) TW595059B (de)
WO (1) WO2003094311A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10248768B4 (de) * 2002-10-18 2007-04-26 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben
US7209506B2 (en) * 2003-07-31 2007-04-24 Osram Opto Semiconductors Gmbh Optically pumped semiconductor device and method for producing it
KR101180166B1 (ko) 2003-11-13 2012-09-05 오스람 옵토 세미컨덕터스 게엠베하 반도체 레이저 장치
EP1560306B1 (de) 2004-01-30 2014-11-19 OSRAM Opto Semiconductors GmbH Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter
DE102004036963A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung
KR100668329B1 (ko) * 2005-02-16 2007-01-12 삼성전자주식회사 변조기 내장형 광펌핑 반도체 레이저 장치
DE102005058900A1 (de) * 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator
DE102006017294A1 (de) 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Optisch pumpbare Halbleitervorrichtung
DE102006042196A1 (de) * 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge
EP1906497B1 (de) 2006-09-27 2011-01-05 OSRAM Opto Semiconductors GmbH Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE102007003832A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser, Herstellungsverfahren für einen solchen und Vorrichtung zum Messen eines Abstands und/oder einer Geschwindigkeit
DE102007053296A1 (de) * 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Halbleitervorrichtung mit Winkelreflektor
US7817700B2 (en) * 2008-09-04 2010-10-19 Seiko Epson Corporation Laser light source device and manufacturing method for manufacturing laser light source device
WO2010062643A1 (en) 2008-10-28 2010-06-03 The Regents Of The University Of Michigan Stacked white oled having separate red, green and blue sub-elements
EP2337168B1 (de) * 2009-12-17 2019-12-25 Forschungsverbund Berlin e.V. Oberflächenemittierende Laserstrahlquelle mit zwei Kavitäten
US9666822B2 (en) 2013-12-17 2017-05-30 The Regents Of The University Of Michigan Extended OLED operational lifetime through phosphorescent dopant profile management
WO2016190919A2 (en) * 2015-01-30 2016-12-01 University Of Southern California Micro-vcsels in thermally engineered flexible composite assemblies
WO2016176285A1 (en) * 2015-04-27 2016-11-03 Sensor Electronic Technology, Inc. Electron beam pumping for light emission
DE102018113874B4 (de) * 2018-06-11 2022-12-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2927908B2 (ja) * 1990-08-14 1999-07-28 キヤノン株式会社 発光素子
JP3296917B2 (ja) 1994-03-10 2002-07-02 株式会社日立製作所 半導体レーザ素子及びその製造方法
JP3299056B2 (ja) * 1994-11-08 2002-07-08 三菱電線工業株式会社 表面放射型のＩｎＧａＡｌＮ系半導体レーザ
JP3111957B2 (ja) * 1997-12-24 2000-11-27 日本電気株式会社 面発光素子
US6314118B1 (en) 1998-11-05 2001-11-06 Gore Enterprise Holdings, Inc. Semiconductor device with aligned oxide apertures and contact to an intervening layer
JP2001085790A (ja) * 1999-09-16 2001-03-30 Toshiba Corp 発光増幅素子
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
US6735234B1 (en) * 2000-02-11 2004-05-11 Giga Tera Ag Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
US6445724B2 (en) 2000-02-23 2002-09-03 Sarnoff Corporation Master oscillator vertical emission laser
US6778582B1 (en) * 2000-03-06 2004-08-17 Novalux, Inc. Coupled cavity high power semiconductor laser
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10026734A1 (de) 2000-05-30 2001-12-13 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
CN1124653C (zh) 2000-06-29 2003-10-15 中国科学院半导体研究所 一种激光器与光电开关集成的器件
CA2328637A1 (en) * 2000-12-15 2002-06-15 Richard D. Clayton Lateral optical pumping of vertical cavity surface emitting laser
US6628696B2 (en) * 2001-01-19 2003-09-30 Siros Technologies, Inc. Multi-channel DWDM transmitter based on a vertical cavity surface emitting laser
WO2002067393A1 (de) 2001-02-20 2002-08-29 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende halbleiterlaservorrichtung und verfahren zu deren herstellung

Also Published As

Publication number Publication date
EP1502336A2 (de) 2005-02-02
TW200400676A (en) 2004-01-01
TW595059B (en) 2004-06-21
CN1650490A (zh) 2005-08-03
EP1502336B1 (de) 2010-09-08
US7551660B2 (en) 2009-06-23
WO2003094311A2 (de) 2003-11-13
JP2005524981A (ja) 2005-08-18
CN100409514C (zh) 2008-08-06
US20050226302A1 (en) 2005-10-13
JP4504181B2 (ja) 2010-07-14
WO2003094311A3 (de) 2004-09-02

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