DE60004215D1 - Lokale abschirmung für speicherzellen - Google Patents

Lokale abschirmung für speicherzellen

Info

Publication number
DE60004215D1
DE60004215D1 DE60004215T DE60004215T DE60004215D1 DE 60004215 D1 DE60004215 D1 DE 60004215D1 DE 60004215 T DE60004215 T DE 60004215T DE 60004215 T DE60004215 T DE 60004215T DE 60004215 D1 DE60004215 D1 DE 60004215D1
Authority
DE
Germany
Prior art keywords
local shielding
magnetic
storage cells
bit region
local
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60004215T
Other languages
English (en)
Other versions
DE60004215T2 (de
Inventor
Theodore Zhu
S Sather
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE60004215D1 publication Critical patent/DE60004215D1/de
Application granted granted Critical
Publication of DE60004215T2 publication Critical patent/DE60004215T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
DE60004215T 1999-05-25 2000-05-24 Lokale abschirmung für speicherzellen Expired - Lifetime DE60004215T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US318073 1999-05-25
US09/318,073 US6872993B1 (en) 1999-05-25 1999-05-25 Thin film memory device having local and external magnetic shielding
PCT/US2000/014206 WO2000072324A1 (en) 1999-05-25 2000-05-24 Local shielding for memory cells

Publications (2)

Publication Number Publication Date
DE60004215D1 true DE60004215D1 (de) 2003-09-04
DE60004215T2 DE60004215T2 (de) 2004-02-19

Family

ID=23236521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60004215T Expired - Lifetime DE60004215T2 (de) 1999-05-25 2000-05-24 Lokale abschirmung für speicherzellen

Country Status (7)

Country Link
US (2) US6872993B1 (de)
EP (1) EP1183691B1 (de)
KR (1) KR100500051B1 (de)
AT (1) ATE246392T1 (de)
DE (1) DE60004215T2 (de)
TW (1) TW455919B (de)
WO (1) WO2000072324A1 (de)

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US6979586B2 (en) 2000-10-06 2005-12-27 Headway Technologies, Inc. Magnetic random access memory array with coupled soft adjacent magnetic layer
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
US6611453B2 (en) * 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
US6413788B1 (en) 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
US6475812B2 (en) * 2001-03-09 2002-11-05 Hewlett Packard Company Method for fabricating cladding layer in top conductor
US6653154B2 (en) * 2001-03-15 2003-11-25 Micron Technology, Inc. Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6720597B2 (en) * 2001-11-13 2004-04-13 Motorola, Inc. Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
TW569442B (en) 2001-12-18 2004-01-01 Toshiba Corp Magnetic memory device having magnetic shield layer, and manufacturing method thereof
US6525957B1 (en) * 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6548849B1 (en) * 2002-01-31 2003-04-15 Sharp Laboratories Of America, Inc. Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
US6770491B2 (en) * 2002-08-07 2004-08-03 Micron Technology, Inc. Magnetoresistive memory and method of manufacturing the same
US6914805B2 (en) 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
JP4404182B2 (ja) 2002-09-25 2010-01-27 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
EP1418591A3 (de) * 2002-11-06 2005-02-09 Interuniversitair Microelektronica Centrum Vzw Magnetische Vorrichtung
US7068537B2 (en) 2002-11-06 2006-06-27 Interuniversitair Microelektronica Centrum (Imec) Magnetic device and method of making the same
US6940153B2 (en) * 2003-02-05 2005-09-06 Hewlett-Packard Development Company, L.P. Magnetic shielding for magnetic random access memory card
CN1799104B (zh) 2003-06-05 2011-07-13 Nxp股份有限公司 存储在非易失性存储器中的数据的完整性控制
ATE421145T1 (de) * 2003-09-02 2009-01-15 Nxp Bv Aktive abschirmung für eine schaltung mit magnetisch empfindlichen materialien
US7078239B2 (en) * 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
DE602004025272D1 (de) * 2003-11-24 2010-03-11 Nxp Bv Nichthomogene abschirmung eines mram-chips mit einem magnetfeldsensor
US7075807B2 (en) * 2004-08-18 2006-07-11 Infineon Technologies Ag Magnetic memory with static magnetic offset field
US7545662B2 (en) * 2005-03-25 2009-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for magnetic shielding in semiconductor integrated circuit
US8269319B2 (en) * 2006-10-13 2012-09-18 Tessera, Inc. Collective and synergistic MRAM shields
US20080270110A1 (en) * 2007-04-30 2008-10-30 Yurick Steven J Automatic speech recognition with textual content input
US20080270344A1 (en) * 2007-04-30 2008-10-30 Yurick Steven J Rich media content search engine
US7911830B2 (en) * 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US8361856B2 (en) 2010-11-01 2013-01-29 Micron Technology, Inc. Memory cells, arrays of memory cells, and methods of forming memory cells
US8329567B2 (en) 2010-11-03 2012-12-11 Micron Technology, Inc. Methods of forming doped regions in semiconductor substrates
US8450175B2 (en) 2011-02-22 2013-05-28 Micron Technology, Inc. Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
US8569831B2 (en) 2011-05-27 2013-10-29 Micron Technology, Inc. Integrated circuit arrays and semiconductor constructions
US9036391B2 (en) 2012-03-06 2015-05-19 Micron Technology, Inc. Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells
US9006060B2 (en) 2012-08-21 2015-04-14 Micron Technology, Inc. N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors
US9129896B2 (en) 2012-08-21 2015-09-08 Micron Technology, Inc. Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
US9478550B2 (en) 2012-08-27 2016-10-25 Micron Technology, Inc. Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors
US8952504B2 (en) 2013-02-08 2015-02-10 Qualcomm Incorporated Small form factor magnetic shield for magnetorestrictive random access memory (MRAM)
US9111853B2 (en) 2013-03-15 2015-08-18 Micron Technology, Inc. Methods of forming doped elements of semiconductor device structures
US9269673B1 (en) * 2014-10-22 2016-02-23 Advanced Semiconductor Engineering, Inc. Semiconductor device packages
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US11257766B1 (en) 2020-08-21 2022-02-22 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

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Also Published As

Publication number Publication date
US6872993B1 (en) 2005-03-29
US7166479B2 (en) 2007-01-23
US20060063278A1 (en) 2006-03-23
WO2000072324A1 (en) 2000-11-30
KR100500051B1 (ko) 2005-07-18
EP1183691A1 (de) 2002-03-06
DE60004215T2 (de) 2004-02-19
ATE246392T1 (de) 2003-08-15
KR20020023944A (ko) 2002-03-29
TW455919B (en) 2001-09-21
EP1183691B1 (de) 2003-07-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition