DE60010837D1 - Optische Halbleitervorrichtung und zugehöriges Herstellungsverfahren - Google Patents

Optische Halbleitervorrichtung und zugehöriges Herstellungsverfahren

Info

Publication number
DE60010837D1
DE60010837D1 DE60010837T DE60010837T DE60010837D1 DE 60010837 D1 DE60010837 D1 DE 60010837D1 DE 60010837 T DE60010837 T DE 60010837T DE 60010837 T DE60010837 T DE 60010837T DE 60010837 D1 DE60010837 D1 DE 60010837D1
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
associated manufacturing
manufacturing
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60010837T
Other languages
English (en)
Other versions
DE60010837T2 (de
Inventor
Yasutaka Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Application granted granted Critical
Publication of DE60010837D1 publication Critical patent/DE60010837D1/de
Publication of DE60010837T2 publication Critical patent/DE60010837T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
DE60010837T 1999-11-26 2000-11-24 Optische Halbleitervorrichtung und zugehöriges Herstellungsverfahren Expired - Fee Related DE60010837T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33595199 1999-11-26
JP33595199A JP3847038B2 (ja) 1999-11-26 1999-11-26 光半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE60010837D1 true DE60010837D1 (de) 2004-06-24
DE60010837T2 DE60010837T2 (de) 2005-06-23

Family

ID=18294169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60010837T Expired - Fee Related DE60010837T2 (de) 1999-11-26 2000-11-24 Optische Halbleitervorrichtung und zugehöriges Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6707839B1 (de)
EP (1) EP1104060B1 (de)
JP (1) JP3847038B2 (de)
DE (1) DE60010837T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003069145A (ja) * 2001-06-14 2003-03-07 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子群の作製方法
CA2392662A1 (en) * 2001-07-10 2003-01-10 John Kenton White All optical clock recovery
JP2005166998A (ja) * 2003-12-03 2005-06-23 Mitsubishi Electric Corp リッジ型分布帰還半導体レーザ
US7440666B2 (en) * 2004-02-25 2008-10-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD
SE531353C2 (sv) * 2005-08-17 2009-03-03 Syntune Ab Metod för att framställa ett modulerat gitter för ett optimalt reflektionsspektra
JP4193866B2 (ja) * 2006-04-27 2008-12-10 住友電気工業株式会社 半導体発光素子の製造方法
JP4552894B2 (ja) * 2006-05-12 2010-09-29 住友電気工業株式会社 分布帰還型半導体レーザを作製する方法
CN100468090C (zh) * 2006-07-05 2009-03-11 中国科学院半导体研究所 吸收型增益耦合分布反馈激光器的制作方法
KR100875929B1 (ko) * 2006-12-05 2008-12-26 한국전자통신연구원 반도체막의 선택적 영역 성장용 마스크 패턴 및 그를이용한 반도체막의 선택적 영역 성장 방법
JP2008294124A (ja) * 2007-05-23 2008-12-04 Fujitsu Ltd 光半導体素子
US8216866B2 (en) * 2010-10-13 2012-07-10 Sumitomo Electric Industries, Ltd. Method to manufacture semiconductor device with optical grating
KR102475891B1 (ko) * 2015-10-08 2022-12-12 삼성전자주식회사 측면 발광 레이저 광원, 및 이를 포함한 3차원 영상 획득 장치
CN107369750B (zh) * 2016-05-11 2019-06-25 群创光电股份有限公司 显示装置
JP7196792B2 (ja) * 2019-07-11 2022-12-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391A (en) * 1847-12-11 Island
US3970958A (en) * 1974-10-15 1976-07-20 Xerox Corporation Electrically pumped, solid-state distributed feedback laser with particular grating spacing
US4993036A (en) * 1988-09-28 1991-02-12 Canon Kabushiki Kaisha Semiconductor laser array including lasers with reflecting means having different wavelength selection properties
JPH0290688A (ja) * 1988-09-28 1990-03-30 Nec Corp 分布帰還型半導体レーザ
JPH03110884A (ja) 1989-09-26 1991-05-10 Nippon Telegr & Teleph Corp <Ntt> 分布帰還型半導体レーザーおよびその製造方法
JPH03110885A (ja) 1989-09-26 1991-05-10 Nippon Telegr & Teleph Corp <Ntt> 分布帰還型半導体レーザー
US5295150A (en) * 1992-12-11 1994-03-15 Eastman Kodak Company Distributed feedback-channeled substrate planar semiconductor laser
EP0606093B1 (de) * 1993-01-07 1997-12-17 Nec Corporation Integrierte optische Halbleiteranordnung und Herstellungsverfahren
JP3611593B2 (ja) * 1994-02-14 2005-01-19 日本オプネクスト株式会社 半導体光素子の作製方法
EP0668641B1 (de) * 1994-02-18 2001-06-06 Canon Kabushiki Kaisha Polarisationsselektiver Halbleiterlaser, Lichtsender und optisches Kommunikationssystem unter Verwendung dieses Lasers
FR2744292B1 (fr) * 1996-01-29 1998-04-30 Menigaux Louis Composant d'emission laser multi-longueur d'onde
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
JPH10117040A (ja) * 1996-10-08 1998-05-06 Nec Corp 半導体レーザ素子及びその製造方法
JP3307905B2 (ja) * 1999-12-28 2002-07-29 日本電気株式会社 光半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6707839B1 (en) 2004-03-16
DE60010837T2 (de) 2005-06-23
US20040156411A1 (en) 2004-08-12
EP1104060A2 (de) 2001-05-30
EP1104060A3 (de) 2002-07-24
EP1104060B1 (de) 2004-05-19
JP3847038B2 (ja) 2006-11-15
JP2001156391A (ja) 2001-06-08
US7083995B2 (en) 2006-08-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee