DE60016220D1 - Speichererweiterungsmodul mit einer vielzahl von speicherbanken und einer banksteuerungschaltung - Google Patents

Speichererweiterungsmodul mit einer vielzahl von speicherbanken und einer banksteuerungschaltung

Info

Publication number
DE60016220D1
DE60016220D1 DE60016220T DE60016220T DE60016220D1 DE 60016220 D1 DE60016220 D1 DE 60016220D1 DE 60016220 T DE60016220 T DE 60016220T DE 60016220 T DE60016220 T DE 60016220T DE 60016220 D1 DE60016220 D1 DE 60016220D1
Authority
DE
Germany
Prior art keywords
memory
bank
control circuit
signals
bank control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60016220T
Other languages
English (en)
Other versions
DE60016220T2 (de
Inventor
Tayung Wong
John Carrillo
Jay Robinson
Clement Fang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sun Microsystems Inc
Original Assignee
Sun Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sun Microsystems Inc filed Critical Sun Microsystems Inc
Application granted granted Critical
Publication of DE60016220D1 publication Critical patent/DE60016220D1/de
Publication of DE60016220T2 publication Critical patent/DE60016220T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
DE60016220T 1999-06-07 2000-06-01 Speichererweiterungsmodul mit einer vielzahl von speicherbanken und einer banksteuerungschaltung Expired - Lifetime DE60016220T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/327,058 US6414868B1 (en) 1999-06-07 1999-06-07 Memory expansion module including multiple memory banks and a bank control circuit
US327058 1999-06-07
PCT/US2000/015192 WO2000075790A2 (en) 1999-06-07 2000-06-01 A memory expansion module including multiple memory banks and a bank control circuit

Publications (2)

Publication Number Publication Date
DE60016220D1 true DE60016220D1 (de) 2004-12-30
DE60016220T2 DE60016220T2 (de) 2005-11-10

Family

ID=23274957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016220T Expired - Lifetime DE60016220T2 (de) 1999-06-07 2000-06-01 Speichererweiterungsmodul mit einer vielzahl von speicherbanken und einer banksteuerungschaltung

Country Status (6)

Country Link
US (1) US6414868B1 (de)
EP (1) EP1194856B1 (de)
AT (1) ATE283515T1 (de)
AU (1) AU5458600A (de)
DE (1) DE60016220T2 (de)
WO (1) WO2000075790A2 (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590907B1 (en) * 1999-10-01 2003-07-08 Stmicroelectronics Ltd. Integrated circuit with additional ports
US7363422B2 (en) * 2000-01-05 2008-04-22 Rambus Inc. Configurable width buffered module
US20050010737A1 (en) * 2000-01-05 2005-01-13 Fred Ware Configurable width buffered module having splitter elements
US6658530B1 (en) 2000-10-12 2003-12-02 Sun Microsystems, Inc. High-performance memory module
US6889335B2 (en) * 2001-04-07 2005-05-03 Hewlett-Packard Development Company, L.P. Memory controller receiver circuitry with tri-state noise immunity
US6625702B2 (en) * 2001-04-07 2003-09-23 Hewlett-Packard Development Company, L.P. Memory controller with support for memory modules comprised of non-homogeneous data width RAM devices
US6678811B2 (en) * 2001-04-07 2004-01-13 Hewlett-Packard Development Company, L.P. Memory controller with 1X/MX write capability
US6633965B2 (en) * 2001-04-07 2003-10-14 Eric M. Rentschler Memory controller with 1×/M× read capability
US6721185B2 (en) 2001-05-01 2004-04-13 Sun Microsystems, Inc. Memory module having balanced data I/O contacts pads
US6714433B2 (en) * 2001-06-15 2004-03-30 Sun Microsystems, Inc. Memory module with equal driver loading
US7234099B2 (en) * 2003-04-14 2007-06-19 International Business Machines Corporation High reliability memory module with a fault tolerant address and command bus
KR100574940B1 (ko) * 2003-04-15 2006-04-28 삼성전자주식회사 서로 다른 높이와 간격의 탭들을 포함하는 모듈
DE102004022347B4 (de) * 2003-05-02 2008-04-03 Samsung Electronics Co., Ltd., Suwon Speichersystem mit Motherboard und zugehöriges Montageverfahren
KR100532432B1 (ko) * 2003-05-02 2005-11-30 삼성전자주식회사 커맨드 신호와 어드레스 신호의 고속 전송이 가능한메모리 시스템
KR20050022798A (ko) * 2003-08-30 2005-03-08 주식회사 이즈텍 유전자 어휘 분류체계를 이용하여 바이오 칩을 분석하기위한 시스템 및 그 방법
US6961281B2 (en) * 2003-09-12 2005-11-01 Sun Microsystems, Inc. Single rank memory module for use in a two-rank memory module system
DE10345978A1 (de) * 2003-10-02 2005-04-28 Infineon Technologies Ag Speichervorrichtung mit Redundanz und Verfahren zur Datenspeicherung
KR100574951B1 (ko) * 2003-10-31 2006-05-02 삼성전자주식회사 개선된 레지스터 배치 구조를 가지는 메모리 모듈
US7646649B2 (en) * 2003-11-18 2010-01-12 International Business Machines Corporation Memory device with programmable receivers to improve performance
US8250295B2 (en) 2004-01-05 2012-08-21 Smart Modular Technologies, Inc. Multi-rank memory module that emulates a memory module having a different number of ranks
KR100593439B1 (ko) * 2004-02-24 2006-06-28 삼성전자주식회사 메모리 모듈 및 이의 신호 라인 배치 방법
US7916574B1 (en) 2004-03-05 2011-03-29 Netlist, Inc. Circuit providing load isolation and memory domain translation for memory module
US7289386B2 (en) 2004-03-05 2007-10-30 Netlist, Inc. Memory module decoder
US7532537B2 (en) * 2004-03-05 2009-05-12 Netlist, Inc. Memory module with a circuit providing load isolation and memory domain translation
US20060277355A1 (en) * 2005-06-01 2006-12-07 Mark Ellsberry Capacity-expanding memory device
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US7392338B2 (en) 2006-07-31 2008-06-24 Metaram, Inc. Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US8359187B2 (en) 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US8090897B2 (en) 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
GB2444663B (en) 2005-09-02 2011-12-07 Metaram Inc Methods and apparatus of stacking drams
US7562271B2 (en) 2005-09-26 2009-07-14 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US7464225B2 (en) 2005-09-26 2008-12-09 Rambus Inc. Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology
US11328764B2 (en) 2005-09-26 2022-05-10 Rambus Inc. Memory system topologies including a memory die stack
DE102005051497B3 (de) * 2005-10-26 2006-12-07 Infineon Technologies Ag Speichermodul mit einer elektronischen Leiterplatte und einer Mehrzahl von gleichartigen Halbleiterchips
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
KR100886629B1 (ko) * 2006-09-28 2009-03-04 주식회사 하이닉스반도체 반도체 메모리 장치
US7907466B2 (en) * 2007-03-09 2011-03-15 Hynix Semiconductor Inc. Semiconductor memory apparatus
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
KR100892686B1 (ko) 2007-11-09 2009-04-15 주식회사 하이닉스반도체 스택뱅크 구조를 갖는 반도체 메모리 장치
US9123395B2 (en) * 2007-11-09 2015-09-01 SK Hynix Inc. Stack bank type semiconductor memory apparatus capable of improving alignment margin
US8159898B2 (en) * 2008-01-18 2012-04-17 Hynix Semiconductor Inc. Architecture of highly integrated semiconductor memory device
US8417870B2 (en) 2009-07-16 2013-04-09 Netlist, Inc. System and method of increasing addressable memory space on a memory board
US8516185B2 (en) * 2009-07-16 2013-08-20 Netlist, Inc. System and method utilizing distributed byte-wise buffers on a memory module
US8154901B1 (en) 2008-04-14 2012-04-10 Netlist, Inc. Circuit providing load isolation and noise reduction
KR101075497B1 (ko) 2008-04-30 2011-10-20 주식회사 하이닉스반도체 반도체 메모리 소자
KR100929826B1 (ko) * 2008-06-04 2009-12-07 주식회사 하이닉스반도체 반도체 메모리 소자
KR100942949B1 (ko) * 2008-06-30 2010-02-22 주식회사 하이닉스반도체 반도체 메모리장치
EP2441007A1 (de) 2009-06-09 2012-04-18 Google, Inc. Programmierung von dimm-abschlusswiderstandswerten
US9128632B2 (en) 2009-07-16 2015-09-08 Netlist, Inc. Memory module with distributed data buffers and method of operation
KR20110047666A (ko) * 2009-10-30 2011-05-09 주식회사 하이닉스반도체 반도체 메모리 장치
KR101094917B1 (ko) * 2009-11-30 2011-12-15 주식회사 하이닉스반도체 전원 회로 및 이를 이용한 반도체 메모리 회로
KR101062776B1 (ko) * 2010-01-29 2011-09-06 주식회사 하이닉스반도체 반도체 메모리 장치
KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
CN102955497A (zh) * 2011-08-18 2013-03-06 鸿富锦精密工业(深圳)有限公司 安装有固态硬盘的主板
CN110428855B (zh) 2013-07-27 2023-09-22 奈特力斯股份有限公司 具有本地分别同步的内存模块
JP2015118724A (ja) * 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US10679722B2 (en) 2016-08-26 2020-06-09 Sandisk Technologies Llc Storage system with several integrated components and method for use therewith
WO2020159548A1 (en) * 2019-02-01 2020-08-06 Hewlett-Packard Development Company, L.P. Upgrades based on analytics from multiple sources

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025903A (en) 1973-09-10 1977-05-24 Computer Automation, Inc. Automatic modular memory address allocation system
US4630230A (en) 1983-04-25 1986-12-16 Cray Research, Inc. Solid state storage device
US5089993B1 (en) 1989-09-29 1998-12-01 Texas Instruments Inc Memory module arranged for data and parity bits
US5522064A (en) 1990-10-01 1996-05-28 International Business Machines Corporation Data processing apparatus for dynamically setting timings in a dynamic memory system
JP3082323B2 (ja) 1991-07-30 2000-08-28 ソニー株式会社 メモリモジュール
US5260892A (en) 1991-11-21 1993-11-09 Sun Microsystems, Inc. High speed electrical signal interconnect structure
US5265218A (en) 1992-05-19 1993-11-23 Sun Microsystems, Inc. Bus architecture for integrated data and video memory
US5270964A (en) 1992-05-19 1993-12-14 Sun Microsystems, Inc. Single in-line memory module
US5272664A (en) 1993-04-21 1993-12-21 Silicon Graphics, Inc. High memory capacity DRAM SIMM
US5504700A (en) 1994-02-22 1996-04-02 Sun Microsystems, Inc. Method and apparatus for high density sixteen and thirty-two megabyte single in-line memory module
IN188196B (de) 1995-05-15 2002-08-31 Silicon Graphics Inc
US5686730A (en) 1995-05-15 1997-11-11 Silicon Graphics, Inc. Dimm pair with data memory and state memory
KR0170723B1 (ko) 1995-12-29 1999-03-30 김광호 단일 ras 신호에 의해 동시 동작이 가능한 이중 뱅크를 갖는 반도체 메모리 장치
US5745914A (en) * 1996-02-09 1998-04-28 International Business Machines Corporation Technique for converting system signals from one address configuration to a different address configuration
JPH10173122A (ja) 1996-12-06 1998-06-26 Mitsubishi Electric Corp メモリモジュール
US5961660A (en) * 1997-03-03 1999-10-05 International Business Machines Corporation Method and apparatus for optimizing ECC memory performance

Also Published As

Publication number Publication date
WO2000075790A3 (en) 2001-08-09
ATE283515T1 (de) 2004-12-15
DE60016220T2 (de) 2005-11-10
US6414868B1 (en) 2002-07-02
EP1194856B1 (de) 2004-11-24
AU5458600A (en) 2000-12-28
EP1194856A2 (de) 2002-04-10
WO2000075790A2 (en) 2000-12-14

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