DE60017213D1 - Festkörper-Bildaufnahmevorrichtung - Google Patents

Festkörper-Bildaufnahmevorrichtung

Info

Publication number
DE60017213D1
DE60017213D1 DE60017213T DE60017213T DE60017213D1 DE 60017213 D1 DE60017213 D1 DE 60017213D1 DE 60017213 T DE60017213 T DE 60017213T DE 60017213 T DE60017213 T DE 60017213T DE 60017213 D1 DE60017213 D1 DE 60017213D1
Authority
DE
Germany
Prior art keywords
solid
imaging device
state imaging
state
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60017213T
Other languages
English (en)
Other versions
DE60017213T2 (de
Inventor
Shinji Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60017213D1 publication Critical patent/DE60017213D1/de
Application granted granted Critical
Publication of DE60017213T2 publication Critical patent/DE60017213T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/005—Arrays characterized by the distribution or form of lenses arranged along a single direction only, e.g. lenticular sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60017213T 1999-04-12 2000-04-11 Festkörper-Bildaufnahmevorrichtung Expired - Fee Related DE60017213T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10436799 1999-04-12
JP10436799 1999-04-12

Publications (2)

Publication Number Publication Date
DE60017213D1 true DE60017213D1 (de) 2005-02-10
DE60017213T2 DE60017213T2 (de) 2005-06-02

Family

ID=14378852

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60017213T Expired - Fee Related DE60017213T2 (de) 1999-04-12 2000-04-11 Festkörper-Bildaufnahmevorrichtung

Country Status (3)

Country Link
US (2) US6583438B1 (de)
EP (1) EP1045449B1 (de)
DE (1) DE60017213T2 (de)

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JP4123667B2 (ja) * 2000-01-26 2008-07-23 凸版印刷株式会社 固体撮像素子の製造方法
JP2002151729A (ja) * 2000-11-13 2002-05-24 Sony Corp 半導体装置及びその製造方法
US20020196553A1 (en) * 2001-06-26 2002-12-26 Colandene Thomas M. Off-focal plane micro-optics
US7250973B2 (en) * 2002-02-21 2007-07-31 Canon Kabushiki Kaisha Image pickup apparatus for reflecting light at an area between successive refractive areas
JP2003264284A (ja) * 2002-03-08 2003-09-19 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
US7084472B2 (en) * 2002-07-09 2006-08-01 Toppan Printing Co., Ltd. Solid-state imaging device and manufacturing method therefor
KR20040060509A (ko) * 2002-12-30 2004-07-06 동부전자 주식회사 Ｃｍｏｓ 이미지 센서
US20040223071A1 (en) 2003-05-08 2004-11-11 David Wells Multiple microlens system for image sensors or display units
US7205526B2 (en) 2003-12-22 2007-04-17 Micron Technology, Inc. Methods of fabricating layered lens structures
JP4616565B2 (ja) * 2004-02-16 2011-01-19 パナソニック株式会社 半導体装置およびその製造方法
US20050225501A1 (en) * 2004-03-30 2005-10-13 Balakrishnan Srinivasan Self-aligned microlens array for transmissive MEMS image arrray
US20050224694A1 (en) * 2004-04-08 2005-10-13 Taiwan Semiconductor Manufacturing Co. Ltd. High efficiency microlens array
KR100753391B1 (ko) * 2004-05-14 2007-08-30 매그나칩 반도체 유한회사 씨모스 이미지센서
US7443005B2 (en) * 2004-06-10 2008-10-28 Tiawan Semiconductor Manufacturing Co., Ltd. Lens structures suitable for use in image sensors and method for making the same
KR100685881B1 (ko) * 2004-06-22 2007-02-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100640972B1 (ko) * 2004-07-15 2006-11-02 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그의 제조 방법
EP1626571A1 (de) * 2004-08-13 2006-02-15 STMicroelectronics Limited Bildaufzeichnungskombination
CN100547439C (zh) * 2004-09-01 2009-10-07 松下电器产业株式会社 一种固体摄像器件
US20060057765A1 (en) 2004-09-13 2006-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor including multiple lenses and method of manufacture thereof
JP2006147661A (ja) * 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd 受光装置とその製造方法およびカメラ
US7420610B2 (en) * 2004-12-15 2008-09-02 Matsushita Electric Industrial Co., Ltd. Solid-state imaging element, solid-state imaging device, and method for fabricating the same
KR20060073186A (ko) * 2004-12-24 2006-06-28 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100648997B1 (ko) * 2004-12-24 2006-11-28 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
DE202005004675U1 (de) * 2005-03-22 2006-08-03 Mekra Lang Gmbh & Co. Kg Kamera für den Außenbereich
US7675096B2 (en) * 2005-03-30 2010-03-09 Fujifilm Corporation Solid-state image pickup element and method of producing the same
JP4469781B2 (ja) * 2005-07-20 2010-05-26 パナソニック株式会社 固体撮像装置及びその製造方法
JP2007053318A (ja) * 2005-08-19 2007-03-01 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP4794283B2 (ja) * 2005-11-18 2011-10-19 パナソニック株式会社 固体撮像装置
JP2007142207A (ja) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
US20070139795A1 (en) * 2005-12-19 2007-06-21 Largan Precision Co., Ltd. Image lens assembly
KR100752164B1 (ko) * 2005-12-28 2007-08-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100741931B1 (ko) * 2005-12-28 2007-07-23 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
JP2007266380A (ja) * 2006-03-29 2007-10-11 Matsushita Electric Ind Co Ltd 半導体撮像装置およびその製造方法
FR2904144A1 (fr) * 2006-07-19 2008-01-25 St Microelectronics Rousset Procede de fabrication d'un wafer de semi-conducteur comprenant un filtre optique integre
KR101176545B1 (ko) * 2006-07-26 2012-08-28 삼성전자주식회사 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법
US7544982B2 (en) * 2006-10-03 2009-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same
JP4457142B2 (ja) * 2007-10-17 2010-04-28 シャープ株式会社 固体撮像素子、カメラモジュールおよび電子情報機器
US9030744B2 (en) 2011-09-19 2015-05-12 Infineon Technologies Ag Fabrication of micro lenses
JP2013077740A (ja) 2011-09-30 2013-04-25 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
US9128218B2 (en) * 2011-12-29 2015-09-08 Visera Technologies Company Limited Microlens structure and fabrication method thereof
TW201921662A (zh) 2012-05-30 2019-06-01 日商新力股份有限公司 攝像元件、攝像裝置、製造裝置及方法
JP6007694B2 (ja) * 2012-09-14 2016-10-12 ソニー株式会社 固体撮像装置及び電子機器
DE102013208677A1 (de) * 2013-05-13 2014-11-13 Robert Bosch Gmbh Bildaufnehmer zur Aufnahme eines zweidimensionalen optischen Bildes
US9547231B2 (en) * 2013-06-12 2017-01-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Device and method for making photomask assembly and photodetector device having light-collecting optical microstructure
FR3009890B1 (fr) * 2013-08-23 2016-12-23 Commissariat Energie Atomique Photodiode bsi a haut rendement quantique
JP6299406B2 (ja) * 2013-12-19 2018-03-28 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP6318881B2 (ja) * 2014-06-06 2018-05-09 セイコーエプソン株式会社 マイクロレンズアレイ基板、マイクロレンズアレイ基板の製造方法、電気光学装置、および電子機器
US9374538B2 (en) * 2014-09-15 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with embedded infrared filter layer
US10297627B1 (en) * 2017-11-08 2019-05-21 Omnivision Technologies, Inc. Chip scale package for an image sensor
US10880467B2 (en) * 2018-06-25 2020-12-29 Omnivision Technologies, Inc. Image sensors with phase detection auto-focus pixels
US11114483B2 (en) * 2018-08-10 2021-09-07 Omnivision Technologies, Inc. Cavityless chip-scale image-sensor package
CN114994812A (zh) * 2022-06-17 2022-09-02 京东方科技集团股份有限公司 一种微透镜制造方法、显示装置及其制造方法

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Also Published As

Publication number Publication date
US6831311B2 (en) 2004-12-14
EP1045449B1 (de) 2005-01-05
EP1045449A2 (de) 2000-10-18
US6583438B1 (en) 2003-06-24
EP1045449A3 (de) 2002-06-12
DE60017213T2 (de) 2005-06-02
US20030197210A1 (en) 2003-10-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee