DE60031173D1 - Misfet - Google Patents

Misfet

Info

Publication number
DE60031173D1
DE60031173D1 DE60031173T DE60031173T DE60031173D1 DE 60031173 D1 DE60031173 D1 DE 60031173D1 DE 60031173 T DE60031173 T DE 60031173T DE 60031173 T DE60031173 T DE 60031173T DE 60031173 D1 DE60031173 D1 DE 60031173D1
Authority
DE
Germany
Prior art keywords
active region
insulating film
type
gate insulating
increases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60031173T
Other languages
English (en)
Other versions
DE60031173T2 (de
Inventor
Toshiya Yokogawa
Makoto Kitabatake
Osamu Kusumoto
Kunimasa Takahashi
Takeshi Uenoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60031173D1 publication Critical patent/DE60031173D1/de
Application granted granted Critical
Publication of DE60031173T2 publication Critical patent/DE60031173T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7725—Field effect transistors with delta-doped channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
DE60031173T 2000-05-31 2000-11-20 Misfet Expired - Fee Related DE60031173T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000161598 2000-05-31
JP2000161598 2000-05-31
PCT/JP2000/008156 WO2001093339A1 (fr) 2000-05-31 2000-11-20 Transistor misfet

Publications (2)

Publication Number Publication Date
DE60031173D1 true DE60031173D1 (de) 2006-11-16
DE60031173T2 DE60031173T2 (de) 2007-01-18

Family

ID=18665600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60031173T Expired - Fee Related DE60031173T2 (de) 2000-05-31 2000-11-20 Misfet

Country Status (10)

Country Link
US (2) US6617653B1 (de)
EP (2) EP1286398B1 (de)
JP (1) JP3527503B2 (de)
KR (1) KR100708028B1 (de)
CN (1) CN100345306C (de)
AT (1) ATE341836T1 (de)
AU (1) AU1416701A (de)
DE (1) DE60031173T2 (de)
TW (1) TW475268B (de)
WO (1) WO2001093339A1 (de)

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JP3527496B2 (ja) * 2000-03-03 2004-05-17 松下電器産業株式会社 半導体装置
US6580125B2 (en) * 2000-11-21 2003-06-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
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JP3940560B2 (ja) * 2001-01-25 2007-07-04 独立行政法人産業技術総合研究所 半導体装置の製造方法
US6852602B2 (en) * 2001-01-31 2005-02-08 Matsushita Electric Industrial Co., Ltd. Semiconductor crystal film and method for preparation thereof
JP3811624B2 (ja) * 2001-04-27 2006-08-23 松下電器産業株式会社 半導体装置
JP4381807B2 (ja) * 2001-09-14 2009-12-09 パナソニック株式会社 半導体装置
JP4463482B2 (ja) 2002-07-11 2010-05-19 パナソニック株式会社 Ｍｉｓｆｅｔ及びその製造方法
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP2005005580A (ja) * 2003-06-13 2005-01-06 Renesas Technology Corp 半導体装置
US7473929B2 (en) * 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
US7410846B2 (en) 2003-09-09 2008-08-12 International Business Machines Corporation Method for reduced N+ diffusion in strained Si on SiGe substrate
CN1307707C (zh) * 2003-09-19 2007-03-28 中国科学院上海微系统与信息技术研究所 一种含镁锌氧的金属－绝缘层－半导体结构及制备工艺
US7074657B2 (en) * 2003-11-14 2006-07-11 Advanced Micro Devices, Inc. Low-power multiple-channel fully depleted quantum well CMOSFETs
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JP5376951B2 (ja) * 2005-10-24 2013-12-25 ローレンス リヴァーモア ナショナル セキュリティ，エルエルシー 光学的に開始されるシリコンカーバイド高電圧スイッチ
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JP6168945B2 (ja) * 2013-09-20 2017-07-26 株式会社東芝 半導体装置およびその製造方法
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JP6791083B2 (ja) * 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
ATE341836T1 (de) 2006-10-15
CN100345306C (zh) 2007-10-24
US20030227061A1 (en) 2003-12-11
JP3527503B2 (ja) 2004-05-17
EP1684359A3 (de) 2006-10-25
EP1684359A9 (de) 2006-12-27
CN1367937A (zh) 2002-09-04
AU1416701A (en) 2001-12-11
KR20020020949A (ko) 2002-03-16
US6617653B1 (en) 2003-09-09
WO2001093339A1 (fr) 2001-12-06
EP1286398A4 (de) 2003-02-26
EP1286398A1 (de) 2003-02-26
US6864507B2 (en) 2005-03-08
EP1684359A2 (de) 2006-07-26
EP1286398B1 (de) 2006-10-04
DE60031173T2 (de) 2007-01-18
KR100708028B1 (ko) 2007-04-16
TW475268B (en) 2002-02-01

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