DE60034403D1 - Halbleiterspeicheranordnung mit einer Fehlerkorrekturkodeschaltung und Verfahren zur Prüfung eines Speichers - Google Patents

Halbleiterspeicheranordnung mit einer Fehlerkorrekturkodeschaltung und Verfahren zur Prüfung eines Speichers

Info

Publication number
DE60034403D1
DE60034403D1 DE60034403T DE60034403T DE60034403D1 DE 60034403 D1 DE60034403 D1 DE 60034403D1 DE 60034403 T DE60034403 T DE 60034403T DE 60034403 T DE60034403 T DE 60034403T DE 60034403 D1 DE60034403 D1 DE 60034403D1
Authority
DE
Germany
Prior art keywords
testing
error correction
correction code
code circuit
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60034403T
Other languages
English (en)
Other versions
DE60034403T2 (de
Inventor
Toshiyuki Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60034403D1 publication Critical patent/DE60034403D1/de
Application granted granted Critical
Publication of DE60034403T2 publication Critical patent/DE60034403T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G06F11/102—Error in check bits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
    • G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
    • G06F11/2215—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested to test error correction or detection circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
DE60034403T 1999-07-12 2000-07-04 Halbleiterspeicheranordnung mit einer Fehlerkorrekturkodeschaltung und Verfahren zur Prüfung eines Speichers Expired - Lifetime DE60034403T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19690399A JP3871471B2 (ja) 1999-07-12 1999-07-12 Ｅｃｃ回路搭載半導体記憶装置及びその検査方法
JP19690399 1999-07-12

Publications (2)

Publication Number Publication Date
DE60034403D1 true DE60034403D1 (de) 2007-05-31
DE60034403T2 DE60034403T2 (de) 2007-08-16

Family

ID=16365572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60034403T Expired - Lifetime DE60034403T2 (de) 1999-07-12 2000-07-04 Halbleiterspeicheranordnung mit einer Fehlerkorrekturkodeschaltung und Verfahren zur Prüfung eines Speichers

Country Status (5)

Country Link
US (1) US6938193B1 (de)
EP (2) EP1619582A3 (de)
JP (1) JP3871471B2 (de)
DE (1) DE60034403T2 (de)
TW (1) TW591665B (de)

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EP1286360A3 (de) * 2001-07-25 2006-12-06 Hewlett-Packard Company Herstellungstest für einen fehlertoleranten magnetoresistiven Speicher
US7073099B1 (en) * 2002-05-30 2006-07-04 Marvell International Ltd. Method and apparatus for improving memory operation and yield
US7376887B2 (en) * 2003-12-22 2008-05-20 International Business Machines Corporation Method for fast ECC memory testing by software including ECC check byte
US6988237B1 (en) * 2004-01-06 2006-01-17 Marvell Semiconductor Israel Ltd. Error-correction memory architecture for testing production errors
JP2005228039A (ja) 2004-02-13 2005-08-25 Toshiba Corp 半導体装置及びそのメモリテスト方法
US7293206B2 (en) * 2004-09-13 2007-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Test data pattern for testing a CRC algorithm
DE102004060368A1 (de) * 2004-12-15 2006-07-06 Infineon Technologies Ag Verfahren zur Erzeugung eines Fehlercodes, Schnittstellenanordnung und deren Verwendung
US20070283223A1 (en) * 2006-06-01 2007-12-06 International Business Machines Corporation Systems, methods, and computer program products for providing a two-bit symbol bus error correcting code with all checkbits transferred last
US20070283208A1 (en) * 2006-06-01 2007-12-06 International Business Machines Corporation Systems, methods, and computer program products for providing a two-bit symbol bus error correcting code with bus diagnostic features
US20070283207A1 (en) * 2006-06-01 2007-12-06 International Business Machines Corporation Systems, methods, and computer program products for providing a two-bit symbol bus error correcting code with bus timing improvements
US7721178B2 (en) * 2006-06-01 2010-05-18 International Business Machines Corporation Systems, methods, and computer program products for providing a two-bit symbol bus error correcting code
US8595573B2 (en) * 2006-12-03 2013-11-26 Apple Inc. Automatic defect management in memory devices
JP4853650B2 (ja) * 2007-01-25 2012-01-11 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置及びそのアクセス評価方法。
US8020115B2 (en) * 2007-04-09 2011-09-13 Infineon Technologies Ag Apparatus, method and system for permanent storage of data
WO2008155678A1 (en) * 2007-06-20 2008-12-24 Nxp B.V. Detection of defective data sequences
JP4564520B2 (ja) * 2007-08-31 2010-10-20 株式会社東芝 半導体記憶装置およびその制御方法
JP5309938B2 (ja) * 2008-12-05 2013-10-09 富士通株式会社 要求処理装置、要求処理システムおよびアクセス試験方法
EP2256634A1 (de) * 2009-05-27 2010-12-01 Robert Bosch Gmbh Datenverarbeitungsvorrichtung und Verfahren zur Fehlerdetektion und Fehlerkorrektur
US20110219266A1 (en) * 2010-03-04 2011-09-08 Qualcomm Incorporated System and Method of Testing an Error Correction Module
US8694862B2 (en) * 2012-04-20 2014-04-08 Arm Limited Data processing apparatus using implicit data storage data storage and method of implicit data storage
JP6018508B2 (ja) 2013-01-09 2016-11-02 エスアイアイ・セミコンダクタ株式会社 不揮発性半導体記憶装置及びそのテスト方法
US9519539B2 (en) * 2014-10-24 2016-12-13 Macronix International Co., Ltd. Monitoring data error status in a memory
JP6395185B2 (ja) * 2015-02-19 2018-09-26 ラピスセミコンダクタ株式会社 半導体記憶装置のテスト方法及び半導体記憶装置
EP3370152B1 (de) * 2017-03-02 2019-12-25 INTEL Corporation Integrierte fehlerprüfung und -korrektur in speichervorrichtungen mit festen bandbreitenschnittstellen
EP3454216B1 (de) * 2017-09-08 2020-11-18 Nxp B.V. Verfahren zum schutz vor unberechtigtem datenzugriff aus einem speicher
US10795759B2 (en) * 2018-09-10 2020-10-06 Micron Technology, Inc. Apparatuses and methods for error correction coding and data bus inversion for semiconductor memories
KR20220168737A (ko) * 2021-06-17 2022-12-26 삼성전자주식회사 반도체 메모리 장치
EP4120083A1 (de) 2021-07-13 2023-01-18 STMicroelectronics Application GmbH Verarbeitungssystem, zugehörige integrierte schaltung, vorrichtung und verfahren

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US4730320A (en) * 1985-02-07 1988-03-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
JPH01196647A (ja) * 1988-01-31 1989-08-08 Nec Corp 誤り訂正機能を有する記憶装置
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JPH0387000A (ja) * 1989-08-30 1991-04-11 Mitsubishi Electric Corp 半導体記憶装置
JPH0554697A (ja) 1991-08-23 1993-03-05 Sharp Corp 半導体メモリ
US5502732A (en) * 1993-09-20 1996-03-26 International Business Machines Corporation Method for testing ECC logic
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Also Published As

Publication number Publication date
JP2001023394A (ja) 2001-01-26
EP1069503A2 (de) 2001-01-17
EP1619582A2 (de) 2006-01-25
US6938193B1 (en) 2005-08-30
TW591665B (en) 2004-06-11
EP1619582A3 (de) 2006-09-06
EP1069503B1 (de) 2007-04-18
EP1069503A3 (de) 2004-10-27
DE60034403T2 (de) 2007-08-16
JP3871471B2 (ja) 2007-01-24

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Legal Events

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP