DE60036286D1 - Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrens - Google Patents
Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrensInfo
- Publication number
- DE60036286D1 DE60036286D1 DE60036286T DE60036286T DE60036286D1 DE 60036286 D1 DE60036286 D1 DE 60036286D1 DE 60036286 T DE60036286 T DE 60036286T DE 60036286 T DE60036286 T DE 60036286T DE 60036286 D1 DE60036286 D1 DE 60036286D1
- Authority
- DE
- Germany
- Prior art keywords
- hydrogen
- epitaxis
- procedure
- surface treatment
- soi substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004381 surface treatment Methods 0.000 title 1
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 2
- 230000003746 surface roughness Effects 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13042399P | 1999-04-21 | 1999-04-21 | |
| US130423P | 1999-04-21 | ||
| US09/399,985 US6287941B1 (en) | 1999-04-21 | 1999-09-20 | Surface finishing of SOI substrates using an EPI process |
| US399985 | 1999-09-20 | ||
| PCT/US2000/010872 WO2000063954A1 (en) | 1999-04-21 | 2000-04-20 | Surface finishing of soi substrates using an epi process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60036286D1 true DE60036286D1 (de) | 2007-10-18 |
| DE60036286T2 DE60036286T2 (de) | 2008-06-05 |
Family
ID=26828477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60036286T Expired - Lifetime DE60036286T2 (de) | 1999-04-21 | 2000-04-20 | Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrens |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6287941B1 (de) |
| EP (2) | EP1887616A3 (de) |
| JP (1) | JP2002542622A (de) |
| KR (2) | KR100709689B1 (de) |
| AT (1) | ATE372590T1 (de) |
| AU (1) | AU4483300A (de) |
| DE (1) | DE60036286T2 (de) |
| WO (1) | WO2000063954A1 (de) |
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| FR2797713B1 (fr) * | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
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-
1999
- 1999-09-20 US US09/399,985 patent/US6287941B1/en not_active Expired - Lifetime
-
2000
- 2000-04-20 EP EP07016247A patent/EP1887616A3/de not_active Withdrawn
- 2000-04-20 AT AT00926275T patent/ATE372590T1/de not_active IP Right Cessation
- 2000-04-20 KR KR1020017013384A patent/KR100709689B1/ko not_active IP Right Cessation
- 2000-04-20 AU AU44833/00A patent/AU4483300A/en not_active Abandoned
- 2000-04-20 DE DE60036286T patent/DE60036286T2/de not_active Expired - Lifetime
- 2000-04-20 EP EP00926275A patent/EP1194949B1/de not_active Expired - Lifetime
- 2000-04-20 WO PCT/US2000/010872 patent/WO2000063954A1/en active IP Right Grant
- 2000-04-20 KR KR1020067024245A patent/KR20060126629A/ko not_active Application Discontinuation
- 2000-04-20 JP JP2000612989A patent/JP2002542622A/ja active Pending
-
2001
- 2001-06-26 US US09/893,340 patent/US7253081B2/en not_active Expired - Fee Related
-
2007
- 2007-07-11 US US11/827,523 patent/US20070259526A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000063954A1 (en) | 2000-10-26 |
| KR100709689B1 (ko) | 2007-04-19 |
| KR20020007377A (ko) | 2002-01-26 |
| US7253081B2 (en) | 2007-08-07 |
| US6287941B1 (en) | 2001-09-11 |
| US20070259526A1 (en) | 2007-11-08 |
| AU4483300A (en) | 2000-11-02 |
| EP1887616A3 (de) | 2008-05-28 |
| DE60036286T2 (de) | 2008-06-05 |
| EP1194949B1 (de) | 2007-09-05 |
| EP1194949A1 (de) | 2002-04-10 |
| US20020022344A1 (en) | 2002-02-21 |
| KR20060126629A (ko) | 2006-12-07 |
| EP1887616A2 (de) | 2008-02-13 |
| JP2002542622A (ja) | 2002-12-10 |
| ATE372590T1 (de) | 2007-09-15 |
| EP1194949A4 (de) | 2003-07-30 |
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