DE60036594D1 - Feldeffekt-Halbleiterbauelement - Google Patents
Feldeffekt-HalbleiterbauelementInfo
- Publication number
- DE60036594D1 DE60036594D1 DE60036594T DE60036594T DE60036594D1 DE 60036594 D1 DE60036594 D1 DE 60036594D1 DE 60036594 T DE60036594 T DE 60036594T DE 60036594 T DE60036594 T DE 60036594T DE 60036594 D1 DE60036594 D1 DE 60036594D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- field effect
- effect semiconductor
- field
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/783—Field effect transistors with field effect produced by an insulated gate comprising a gate to body connection, i.e. bulk dynamic threshold voltage MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32400999 | 1999-11-15 | ||
JP32400999 | 1999-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60036594D1 true DE60036594D1 (de) | 2007-11-15 |
DE60036594T2 DE60036594T2 (de) | 2008-01-31 |
Family
ID=18161122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036594T Expired - Lifetime DE60036594T2 (de) | 1999-11-15 | 2000-11-14 | Feldeffekt-Halbleiterbauelement |
Country Status (3)
Country | Link |
---|---|
US (3) | US6512252B1 (de) |
EP (2) | EP1102327B1 (de) |
DE (1) | DE60036594T2 (de) |
Families Citing this family (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001037517A2 (en) * | 1999-11-03 | 2001-05-25 | Wayport, Inc. | Distributed network communication system which enables multiple network providers to use a common distributed network infrastructure |
US6426265B1 (en) * | 2001-01-30 | 2002-07-30 | International Business Machines Corporation | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
JP2002252233A (ja) * | 2001-02-22 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
WO2002082526A1 (fr) * | 2001-04-03 | 2002-10-17 | Matsushita Electric Industrial Co., Ltd. | Dispositif a semi-conducteurs et procede de fabrication |
WO2002084744A1 (fr) * | 2001-04-12 | 2002-10-24 | Matsushita Electric Industrial Co., Ltd. | Dispositif semi-conducteur et son procede de fabrication |
TW541699B (en) | 2001-04-18 | 2003-07-11 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JP4137510B2 (ja) * | 2001-05-17 | 2008-08-20 | セイコーインスツル株式会社 | 差動増幅回路を有する半導体装置 |
CN1395316A (zh) * | 2001-07-04 | 2003-02-05 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
JPWO2003063254A1 (ja) * | 2002-01-21 | 2005-05-26 | 松下電器産業株式会社 | 半導体装置 |
US6635909B2 (en) | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
WO2003098698A1 (fr) * | 2002-05-17 | 2003-11-27 | Matsushita Electric Industrial Co., Ltd. | Dispositif a semi-conducteur et son procede de fabrication |
JP2003347229A (ja) * | 2002-05-31 | 2003-12-05 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP4294935B2 (ja) | 2002-10-17 | 2009-07-15 | 株式会社ルネサステクノロジ | 半導体装置 |
KR100487922B1 (ko) * | 2002-12-06 | 2005-05-06 | 주식회사 하이닉스반도체 | 반도체소자의 트랜지스터 및 그 형성방법 |
US6818938B1 (en) * | 2002-12-10 | 2004-11-16 | National Semiconductor Corporation | MOS transistor and method of forming the transistor with a channel region in a layer of composite material |
US7098095B1 (en) | 2002-12-10 | 2006-08-29 | National Semiconductor Corporation | Method of forming a MOS transistor with a layer of silicon germanium carbon |
WO2004107383A1 (ja) * | 2003-01-09 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Misfet |
JPWO2004070847A1 (ja) * | 2003-02-07 | 2006-06-01 | 松下電器産業株式会社 | 電界効果トランジスタ及びその製造方法、相補型電界効果トランジスタ |
DE10314989A1 (de) * | 2003-04-02 | 2004-10-14 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Strukturen sowie mikromischanische Struktur |
US7087473B2 (en) * | 2003-06-13 | 2006-08-08 | Matsushita Electric Industrial Co., Ltd. | Method of forming conventional complementary MOS transistors and complementary heterojunction MOS transistors on common substrate |
CN1717748A (zh) * | 2003-06-25 | 2006-01-04 | 松下电器产业株式会社 | 驱动非易失性存储器的方法 |
US7037770B2 (en) * | 2003-10-20 | 2006-05-02 | International Business Machines Corporation | Method of manufacturing strained dislocation-free channels for CMOS |
US7045873B2 (en) * | 2003-12-08 | 2006-05-16 | International Business Machines Corporation | Dynamic threshold voltage MOSFET on SOI |
US7078723B2 (en) * | 2004-04-06 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microelectronic device with depth adjustable sill |
JP4767843B2 (ja) * | 2004-04-14 | 2011-09-07 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US7195963B2 (en) * | 2004-05-21 | 2007-03-27 | Freescale Semiconductor, Inc. | Method for making a semiconductor structure using silicon germanium |
US7223994B2 (en) * | 2004-06-03 | 2007-05-29 | International Business Machines Corporation | Strained Si on multiple materials for bulk or SOI substrates |
US20060113603A1 (en) * | 2004-12-01 | 2006-06-01 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator structures and related methods |
WO2006060054A1 (en) * | 2004-12-01 | 2006-06-08 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator and fin-field-effect transistor structures and related methods |
US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US7479431B2 (en) * | 2004-12-17 | 2009-01-20 | Intel Corporation | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain |
US7279406B2 (en) * | 2004-12-22 | 2007-10-09 | Texas Instruments Incorporated | Tailoring channel strain profile by recessed material composition control |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US20070267722A1 (en) * | 2006-05-17 | 2007-11-22 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
WO2006125040A2 (en) * | 2005-05-17 | 2006-11-23 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
US20080050883A1 (en) * | 2006-08-25 | 2008-02-28 | Atmel Corporation | Hetrojunction bipolar transistor (hbt) with periodic multilayer base |
US20070054460A1 (en) * | 2005-06-23 | 2007-03-08 | Atmel Corporation | System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop |
US20060292809A1 (en) * | 2005-06-23 | 2006-12-28 | Enicks Darwin G | Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection |
JP4231909B2 (ja) * | 2005-07-22 | 2009-03-04 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US7626246B2 (en) * | 2005-07-26 | 2009-12-01 | Amberwave Systems Corporation | Solutions for integrated circuit integration of alternative active area materials |
US7638842B2 (en) * | 2005-09-07 | 2009-12-29 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators |
US7348225B2 (en) * | 2005-10-27 | 2008-03-25 | International Business Machines Corporation | Structure and method of fabricating FINFET with buried channel |
US8530934B2 (en) | 2005-11-07 | 2013-09-10 | Atmel Corporation | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto |
US7777250B2 (en) * | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
US7560326B2 (en) * | 2006-05-05 | 2009-07-14 | International Business Machines Corporation | Silicon/silcion germaninum/silicon body device with embedded carbon dopant |
US7772060B2 (en) * | 2006-06-21 | 2010-08-10 | Texas Instruments Deutschland Gmbh | Integrated SiGe NMOS and PMOS transistors |
WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
WO2008036256A1 (en) * | 2006-09-18 | 2008-03-27 | Amberwave Systems Corporation | Aspect ratio trapping for mixed signal applications |
WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
US7799592B2 (en) * | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
US20080187018A1 (en) * | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
US7569913B2 (en) * | 2006-10-26 | 2009-08-04 | Atmel Corporation | Boron etch-stop layer and methods related thereto |
US7550758B2 (en) | 2006-10-31 | 2009-06-23 | Atmel Corporation | Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator |
US7750338B2 (en) * | 2006-12-05 | 2010-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-SiGe epitaxy for MOS devices |
US7569869B2 (en) * | 2007-03-29 | 2009-08-04 | Intel Corporation | Transistor having tensile strained channel and system including same |
US7825328B2 (en) * | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US8329541B2 (en) * | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
DE112008002387B4 (de) | 2007-09-07 | 2022-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung, |
KR100902105B1 (ko) | 2007-11-09 | 2009-06-09 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
US7968910B2 (en) | 2008-04-15 | 2011-06-28 | International Business Machines Corporation | Complementary field effect transistors having embedded silicon source and drain regions |
JP5173582B2 (ja) * | 2008-05-19 | 2013-04-03 | 株式会社東芝 | 半導体装置 |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
DE102008035816B4 (de) | 2008-07-31 | 2011-08-25 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 | Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
JP5416212B2 (ja) | 2008-09-19 | 2014-02-12 | 台湾積體電路製造股▲ふん▼有限公司 | エピタキシャル層の成長によるデバイス形成 |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
DE102008049717B4 (de) * | 2008-09-30 | 2010-10-14 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit einem Metallgatestapel mit großem ε und einem kompressiv verspannten Kanal |
US8048791B2 (en) * | 2009-02-23 | 2011-11-01 | Globalfoundries Inc. | Method of forming a semiconductor device |
DE102009010883B4 (de) * | 2009-02-27 | 2011-05-26 | Amd Fab 36 Limited Liability Company & Co. Kg | Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses |
US8816391B2 (en) * | 2009-04-01 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain engineering of devices with high-mobility channels |
CN101853882B (zh) | 2009-04-01 | 2016-03-23 | 台湾积体电路制造股份有限公司 | 具有改进的开关电流比的高迁移率多面栅晶体管 |
CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
US8455860B2 (en) | 2009-04-30 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing source/drain resistance of III-V based transistors |
US9768305B2 (en) | 2009-05-29 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gradient ternary or quaternary multiple-gate transistor |
US8617976B2 (en) | 2009-06-01 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain re-growth for manufacturing III-V based transistors |
US8138051B2 (en) * | 2009-06-19 | 2012-03-20 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system with high voltage transistor and method of manufacture thereof |
CN101819996B (zh) * | 2010-04-16 | 2011-10-26 | 清华大学 | 半导体结构 |
US8354694B2 (en) * | 2010-08-13 | 2013-01-15 | International Business Machines Corporation | CMOS transistors with stressed high mobility channels |
US8659054B2 (en) * | 2010-10-15 | 2014-02-25 | International Business Machines Corporation | Method and structure for pFET junction profile with SiGe channel |
US8962417B2 (en) | 2010-10-15 | 2015-02-24 | International Business Machines Corporation | Method and structure for pFET junction profile with SiGe channel |
US8633096B2 (en) | 2010-11-11 | 2014-01-21 | International Business Machines Corporation | Creating anisotropically diffused junctions in field effect transistor devices |
KR101759645B1 (ko) * | 2010-12-23 | 2017-08-01 | 삼성전자주식회사 | 반도체 장치 |
US20120205716A1 (en) * | 2011-02-16 | 2012-08-16 | International Business Machines Corporation | Epitaxially Grown Extension Regions for Scaled CMOS Devices |
WO2013001579A1 (ja) | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
US8759916B2 (en) | 2012-01-27 | 2014-06-24 | International Business Machines Corporation | Field effect transistor and a method of forming the transistor |
US8883598B2 (en) * | 2012-03-05 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin capped channel layers of semiconductor devices and methods of forming the same |
KR20130118103A (ko) * | 2012-04-19 | 2013-10-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN103390634B (zh) * | 2012-05-09 | 2015-12-02 | 中芯国际集成电路制造(上海)有限公司 | SiC MOSFET结构及其制造方法 |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
KR101444556B1 (ko) * | 2012-12-27 | 2014-09-24 | 삼성전기주식회사 | 전원 공급 장치 |
CN103500760B (zh) * | 2013-09-29 | 2016-05-04 | 哈尔滨工程大学 | 一种体硅mosfet结构 |
CN104517847B (zh) * | 2013-09-29 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 无结晶体管及其形成方法 |
US9263522B2 (en) * | 2013-12-09 | 2016-02-16 | Qualcomm Incorporated | Transistor with a diffusion barrier |
CN107004721B (zh) * | 2014-12-16 | 2020-10-20 | 乐金显示有限公司 | 薄膜晶体管阵列基板 |
WO2016099150A1 (ko) * | 2014-12-16 | 2016-06-23 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 |
US9741622B2 (en) * | 2015-01-29 | 2017-08-22 | Globalfoundries Inc. | Methods of forming NMOS and PMOS FinFET devices and the resulting product |
US9847334B1 (en) | 2016-11-18 | 2017-12-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with channel layer |
US10680065B2 (en) | 2018-08-01 | 2020-06-09 | Globalfoundries Inc. | Field-effect transistors with a grown silicon-germanium channel |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68926256T2 (de) * | 1988-01-07 | 1996-09-19 | Fujitsu Ltd | Komplementäre Halbleiteranordnung |
US5019882A (en) * | 1989-05-15 | 1991-05-28 | International Business Machines Corporation | Germanium channel silicon MOSFET |
US5461250A (en) * | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
US5792679A (en) * | 1993-08-30 | 1998-08-11 | Sharp Microelectronics Technology, Inc. | Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant |
US5559368A (en) * | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
JP3361922B2 (ja) * | 1994-09-13 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
US5561302A (en) * | 1994-09-26 | 1996-10-01 | Motorola, Inc. | Enhanced mobility MOSFET device and method |
DE19533313A1 (de) * | 1995-09-08 | 1997-03-13 | Max Planck Gesellschaft | Halbleiterstruktur für einen Transistor |
KR100473901B1 (ko) * | 1995-12-15 | 2005-08-29 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | SiGe층을포함하는반도체전계효과디바이스 |
US5936278A (en) * | 1996-03-13 | 1999-08-10 | Texas Instruments Incorporated | Semiconductor on silicon (SOI) transistor with a halo implant |
US5847419A (en) * | 1996-09-17 | 1998-12-08 | Kabushiki Kaisha Toshiba | Si-SiGe semiconductor device and method of fabricating the same |
US6399970B2 (en) * | 1996-09-17 | 2002-06-04 | Matsushita Electric Industrial Co., Ltd. | FET having a Si/SiGeC heterojunction channel |
JP3443343B2 (ja) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | 半導体装置 |
JP4360702B2 (ja) * | 1998-08-07 | 2009-11-11 | 株式会社ルネサステクノロジ | 半導体装置 |
US6204138B1 (en) * | 1999-03-02 | 2001-03-20 | Advanced Micro Devices, Inc. | Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effects |
US6429056B1 (en) * | 1999-11-22 | 2002-08-06 | International Business Machines Corporation | Dynamic threshold voltage devices with low gate to substrate resistance |
US6380590B1 (en) * | 2001-02-22 | 2002-04-30 | Advanced Micro Devices, Inc. | SOI chip having multiple threshold voltage MOSFETs by using multiple channel materials and method of fabricating same |
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2000
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- 2000-11-14 DE DE60036594T patent/DE60036594T2/de not_active Expired - Lifetime
- 2000-11-14 EP EP06004762A patent/EP1672700A2/de not_active Withdrawn
- 2000-11-15 US US09/712,223 patent/US6512252B1/en not_active Expired - Lifetime
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2002
- 2002-10-11 US US10/268,905 patent/US6753555B2/en not_active Expired - Lifetime
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US6512252B1 (en) | 2003-01-28 |
EP1102327A2 (de) | 2001-05-23 |
DE60036594T2 (de) | 2008-01-31 |
US20040212013A1 (en) | 2004-10-28 |
EP1102327B1 (de) | 2007-10-03 |
US20030052348A1 (en) | 2003-03-20 |
EP1102327A3 (de) | 2004-12-29 |
US6753555B2 (en) | 2004-06-22 |
US7205586B2 (en) | 2007-04-17 |
EP1672700A2 (de) | 2006-06-21 |
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