DE60037301D1 - Universales speicherelement und systeme mit einem solchen element, sowie anordnung und verfahren zum lesen. schreiben und programmieren des elements. - Google Patents

Universales speicherelement und systeme mit einem solchen element, sowie anordnung und verfahren zum lesen. schreiben und programmieren des elements.

Info

Publication number
DE60037301D1
DE60037301D1 DE60037301T DE60037301T DE60037301D1 DE 60037301 D1 DE60037301 D1 DE 60037301D1 DE 60037301 T DE60037301 T DE 60037301T DE 60037301 T DE60037301 T DE 60037301T DE 60037301 D1 DE60037301 D1 DE 60037301D1
Authority
DE
Germany
Prior art keywords
write
reading
program
systems
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60037301T
Other languages
English (en)
Other versions
DE60037301T2 (de
Inventor
Stanford R Ovshinsky
Boil Pashmakov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of DE60037301D1 publication Critical patent/DE60037301D1/de
Application granted granted Critical
Publication of DE60037301T2 publication Critical patent/DE60037301T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
DE60037301T 1999-04-12 2000-04-12 Universales speicherelement und systeme mit einem solchen element, sowie anordnung und verfahren zum lesen. schreiben und programmieren des elements. Expired - Fee Related DE60037301T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/289,713 US6141241A (en) 1998-06-23 1999-04-12 Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US289713 1999-04-12
PCT/US2000/009731 WO2000062301A1 (en) 1999-04-12 2000-04-12 Universal memory element with systems employing same and apparatus and method for reading, writing and programming same

Publications (2)

Publication Number Publication Date
DE60037301D1 true DE60037301D1 (de) 2008-01-17
DE60037301T2 DE60037301T2 (de) 2008-11-27

Family

ID=23112756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037301T Expired - Fee Related DE60037301T2 (de) 1999-04-12 2000-04-12 Universales speicherelement und systeme mit einem solchen element, sowie anordnung und verfahren zum lesen. schreiben und programmieren des elements.

Country Status (11)

Country Link
US (1) US6141241A (de)
EP (1) EP1104578B1 (de)
JP (1) JP2002541613A (de)
KR (1) KR100636086B1 (de)
AU (1) AU4081600A (de)
BR (1) BR0006031A (de)
CA (1) CA2332867A1 (de)
DE (1) DE60037301T2 (de)
MX (1) MXPA00011876A (de)
RU (1) RU2216054C2 (de)
WO (1) WO2000062301A1 (de)

Families Citing this family (209)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6201734B1 (en) * 1998-09-25 2001-03-13 Sandisk Corporation Programmable impedance device
US6792754B2 (en) * 1999-02-15 2004-09-21 Silverbrook Research Pty Ltd Integrated circuit device for fluid ejection
US6075719A (en) * 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US7247876B2 (en) 2000-06-30 2007-07-24 Intel Corporation Three dimensional programmable device and method for fabricating the same
US6881994B2 (en) * 2000-08-14 2005-04-19 Matrix Semiconductor, Inc. Monolithic three dimensional array of charge storage devices containing a planarized surface
US6567293B1 (en) * 2000-09-29 2003-05-20 Ovonyx, Inc. Single level metal memory cell using chalcogenide cladding
US6534781B2 (en) 2000-12-26 2003-03-18 Ovonyx, Inc. Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6900468B2 (en) * 2001-02-20 2005-05-31 Hewlett-Packard Development Company, L.P. Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6480438B1 (en) 2001-06-12 2002-11-12 Ovonyx, Inc. Providing equal cell programming conditions across a large and high density array of phase-change memory cells
US6462984B1 (en) 2001-06-29 2002-10-08 Intel Corporation Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
US6487113B1 (en) 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
US6570784B2 (en) 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6590807B2 (en) 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US20030047765A1 (en) 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
EP2112659A1 (de) 2001-09-01 2009-10-28 Energy Convertion Devices, Inc. Verbesserte Datenspeicherung in optischen Datenspeicher- und -abrufsystemen mit blauen Lasern und/oder Plasmonlinsen
JP4911845B2 (ja) * 2001-09-20 2012-04-04 株式会社リコー 相変化型不揮発性メモリ素子、該相変化型不揮発性メモリ素子を用いたメモリアレーおよび該相変化型不揮発性メモリ素子の情報記録方法
US6879525B2 (en) * 2001-10-31 2005-04-12 Hewlett-Packard Development Company, L.P. Feedback write method for programmable memory
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6545903B1 (en) 2001-12-17 2003-04-08 Texas Instruments Incorporated Self-aligned resistive plugs for forming memory cell with phase change material
US6873538B2 (en) 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6625054B2 (en) 2001-12-28 2003-09-23 Intel Corporation Method and apparatus to program a phase change memory
US6667900B2 (en) 2001-12-28 2003-12-23 Ovonyx, Inc. Method and apparatus to operate a memory cell
US6909656B2 (en) 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6891749B2 (en) 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
AU2003201760A1 (en) 2002-04-04 2003-10-20 Kabushiki Kaisha Toshiba Phase-change memory device
US7663132B2 (en) * 2002-04-04 2010-02-16 Kabushiki Kaisha Toshiba Resistance change memory device
US7767993B2 (en) * 2002-04-04 2010-08-03 Kabushiki Kaisha Toshiba Resistance change memory device
US7623370B2 (en) * 2002-04-04 2009-11-24 Kabushiki Kaisha Toshiba Resistance change memory device
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6671710B2 (en) * 2002-05-10 2003-12-30 Energy Conversion Devices, Inc. Methods of computing with digital multistate phase change materials
JP2005527033A (ja) * 2002-05-24 2005-09-08 エナージー　コンバーション　デバイセス　インコーポレイテッド 因数分解およびモジュラ算術の方法
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6999953B2 (en) * 2002-07-03 2006-02-14 Energy Conversion Devices, Inc. Analog neurons and neurosynaptic networks
US7015494B2 (en) 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US6906939B2 (en) * 2002-08-02 2005-06-14 Unity Semiconductor Corporation Re-writable memory with multiple memory layers
US6850429B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US6768665B2 (en) * 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
US6859304B2 (en) * 2002-08-09 2005-02-22 Energy Conversion Devices, Inc. Photonic crystals and devices having tunability and switchability
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US6985373B2 (en) * 2002-08-23 2006-01-10 Energy Conversion Devices, Inc. Binary beam steering device
US6768666B2 (en) * 2002-08-23 2004-07-27 Energy Conversion Devices, Inc. Phase angle controlled stationary elements for wavefront engineering of electromagnetic radiation
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US6864521B2 (en) 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7010644B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6856002B2 (en) 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
JP4190238B2 (ja) * 2002-09-13 2008-12-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR20050053750A (ko) * 2002-10-11 2005-06-08 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 상변환 물질을 포함하는 전기 장치
US7242019B2 (en) * 2002-12-13 2007-07-10 Intel Corporation Shunted phase change memory
US6744088B1 (en) 2002-12-13 2004-06-01 Intel Corporation Phase change memory device on a planar composite layer
US6813177B2 (en) * 2002-12-13 2004-11-02 Ovoynx, Inc. Method and system to store information
JP2006511965A (ja) * 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US7285464B2 (en) 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US6969868B2 (en) * 2002-12-28 2005-11-29 Intel Corporation Method of storing a data bit including melting and cooling a volume of alloy therein
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7085155B2 (en) * 2003-03-10 2006-08-01 Energy Conversion Devices, Inc. Secured phase-change devices
DE10310573A1 (de) * 2003-03-11 2004-09-30 Infineon Technologies Ag Nicht-flüchtige, integrierte Speicherzelle und Verfahren zum Einschreiben oder Auslesen einer Information in die / aus der Speicherzelle
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
JP4377816B2 (ja) * 2003-03-18 2009-12-02 株式会社東芝 相変化メモリ装置
US7706167B2 (en) * 2003-03-18 2010-04-27 Kabushiki Kaisha Toshiba Resistance change memory device
US7755934B2 (en) * 2003-03-18 2010-07-13 Kabushiki Kaisha Toshiba Resistance change memory device
US7719875B2 (en) * 2003-03-18 2010-05-18 Kabushiki Kaisha Toshiba Resistance change memory device
US7729158B2 (en) * 2003-04-03 2010-06-01 Kabushiki Kaisha Toshiba Resistance change memory device
US7335906B2 (en) * 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
US7459715B2 (en) * 2003-04-03 2008-12-02 Kabushiki Kaisha Toshiba Resistance change memory device
KR100498493B1 (ko) * 2003-04-04 2005-07-01 삼성전자주식회사 저전류 고속 상변화 메모리 및 그 구동 방식
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US6914801B2 (en) * 2003-05-13 2005-07-05 Ovonyx, Inc. Method of eliminating drift in phase-change memory
US7085154B2 (en) * 2003-06-03 2006-08-01 Samsung Electronics Co., Ltd. Device and method for pulse width control in a phase change memory device
US20040251988A1 (en) * 2003-06-16 2004-12-16 Manish Sharma Adjustable phase change material resistor
US7180767B2 (en) * 2003-06-18 2007-02-20 Macronix International Co., Ltd. Multi-level memory device and methods for programming and reading the same
US20040257848A1 (en) * 2003-06-18 2004-12-23 Macronix International Co., Ltd. Method for adjusting the threshold voltage of a memory cell
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
JP2005026576A (ja) * 2003-07-04 2005-01-27 Sony Corp 記憶装置
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US7308067B2 (en) * 2003-08-04 2007-12-11 Intel Corporation Read bias scheme for phase change memories
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
WO2005031752A1 (ja) * 2003-09-26 2005-04-07 Kanazawa University Technology Licensing Organization Ltd. 多値メモリおよびそのための相変化型記録媒体への記録方法
JP4567963B2 (ja) * 2003-12-05 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
RU2006124528A (ru) * 2003-12-09 2008-01-20 Риота Пти Лтд (Au) Запоминающее устройство, способ сохранения информации, способ и структурированный материал
JP4670252B2 (ja) * 2004-01-20 2011-04-13 ソニー株式会社 記憶装置
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
TWI277207B (en) * 2004-10-08 2007-03-21 Ind Tech Res Inst Multilevel phase-change memory, operating method and manufacture method thereof
JP4543885B2 (ja) * 2004-11-04 2010-09-15 ソニー株式会社 記憶装置の読み出し方法及び記憶装置、並びに半導体装置
EP1667244B1 (de) * 2004-12-02 2011-01-26 Samsung Electronics Co., Ltd. Herstellungsverfahren für Phasenwechselspeichervorrichtung mit Phasenwechselmaterialschicht aus Phasenwechselnanopartikeln
US8049202B2 (en) 2004-12-02 2011-11-01 Samsung Electronics Co., Ltd. Phase change memory device having phase change material layer containing phase change nano particles
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US7307268B2 (en) 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
JP4282612B2 (ja) * 2005-01-19 2009-06-24 エルピーダメモリ株式会社 メモリ装置及びそのリフレッシュ方法
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
KR100794654B1 (ko) * 2005-07-06 2008-01-14 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US20070034850A1 (en) * 2005-08-09 2007-02-15 Ovonyx, Inc. Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
KR100637235B1 (ko) * 2005-08-26 2006-10-20 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US8183551B2 (en) * 2005-11-03 2012-05-22 Agale Logic, Inc. Multi-terminal phase change devices
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
KR100782482B1 (ko) * 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
KR101258284B1 (ko) * 2006-05-22 2013-04-25 삼성전자주식회사 메모리 소자 구동 회로
JP4297136B2 (ja) * 2006-06-07 2009-07-15 ソニー株式会社 記憶装置
US7457146B2 (en) * 2006-06-19 2008-11-25 Qimonda North America Corp. Memory cell programmed using a temperature controlled set pulse
JP2008016115A (ja) * 2006-07-05 2008-01-24 Toshiba Corp 不揮発性記憶装置
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
KR100834738B1 (ko) 2006-08-31 2008-06-05 삼성전자주식회사 상변화 메모리 장치의 구동 방법 및 그 방법을 사용하는상변화 메모리 장치
KR100816752B1 (ko) * 2006-09-15 2008-03-25 삼성전자주식회사 프로그램 루프 동작을 수행하는 상 변화 메모리 장치 및그것의 프로그램 방법
US7619917B2 (en) * 2006-11-28 2009-11-17 Qimonda North America Corp. Memory cell with trigger element
US7719886B2 (en) * 2007-05-03 2010-05-18 Qimonda North America Corp. Multi-level resistive memory cell using different crystallization speeds
US7859893B2 (en) * 2007-05-31 2010-12-28 Micron Technology, Inc. Phase change memory structure with multiple resistance states and methods of programming and sensing same
US7459716B2 (en) * 2007-06-11 2008-12-02 Kabushiki Kaisha Toshiba Resistance change memory device
JP5060191B2 (ja) * 2007-07-18 2012-10-31 株式会社東芝 抵抗変化メモリ装置のデータ書き込み方法
KR101390340B1 (ko) * 2007-09-11 2014-05-07 삼성전자주식회사 다중 레벨 메모리 장치 및 그 동작 방법
JP5253784B2 (ja) 2007-10-17 2013-07-31 株式会社東芝 不揮発性半導体記憶装置
JP5172269B2 (ja) 2007-10-17 2013-03-27 株式会社東芝 不揮発性半導体記憶装置
JP5049733B2 (ja) 2007-10-17 2012-10-17 株式会社東芝 情報処理システム
US20090046499A1 (en) * 2008-02-05 2009-02-19 Qimonda Ag Integrated circuit including memory having limited read
JP2009193627A (ja) 2008-02-13 2009-08-27 Toshiba Corp 半導体記憶装置
KR20090095313A (ko) * 2008-03-05 2009-09-09 삼성전자주식회사 저항성 메모리 소자의 프로그래밍 방법
JP4719233B2 (ja) * 2008-03-11 2011-07-06 株式会社東芝 不揮発性半導体記憶装置
JP2009224610A (ja) * 2008-03-17 2009-10-01 Toshiba Corp 半導体記憶装置
US8059447B2 (en) 2008-06-27 2011-11-15 Sandisk 3D Llc Capacitive discharge method for writing to non-volatile memory
JP2010020811A (ja) 2008-07-08 2010-01-28 Toshiba Corp 半導体記憶装置
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
JP5197427B2 (ja) * 2008-08-25 2013-05-15 株式会社東芝 半導体記憶装置
US8130528B2 (en) 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US8027209B2 (en) 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
JP5127661B2 (ja) * 2008-10-10 2013-01-23 株式会社東芝 半導体記憶装置
US8289748B2 (en) * 2008-10-27 2012-10-16 Seagate Technology Llc Tuning a variable resistance of a resistive sense element
JP2010123820A (ja) 2008-11-21 2010-06-03 Toshiba Corp 半導体記憶装置
JP2010192040A (ja) * 2009-02-18 2010-09-02 Toshiba Corp 半導体記憶装置
JP5175769B2 (ja) * 2009-02-25 2013-04-03 株式会社東芝 半導体記憶装置
JP5197448B2 (ja) 2009-03-13 2013-05-15 株式会社東芝 抵抗変化メモリ装置
JP2010225741A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
US8279650B2 (en) 2009-04-20 2012-10-02 Sandisk 3D Llc Memory system with data line switching scheme
US8250010B2 (en) * 2009-05-21 2012-08-21 International Business Machines Corporation Electronic learning synapse with spike-timing dependent plasticity using unipolar memory-switching elements
US8447714B2 (en) * 2009-05-21 2013-05-21 International Business Machines Corporation System for electronic learning synapse with spike-timing dependent plasticity using phase change memory
US7885091B2 (en) * 2009-05-26 2011-02-08 Sandisk 3D Llc Limited charge delivery for programming non-volatile storage elements
FR2946788B1 (fr) * 2009-06-11 2016-11-11 Thales Sa Dispositif a resistance ajustable.
JP5214560B2 (ja) 2009-08-19 2013-06-19 株式会社東芝 不揮発性半導体記憶装置
JP5337121B2 (ja) 2009-09-17 2013-11-06 株式会社東芝 不揮発性半導体記憶装置
US9251897B2 (en) * 2009-12-31 2016-02-02 Micron Technology, Inc. Methods for a phase-change memory array
US9269042B2 (en) 2010-09-30 2016-02-23 International Business Machines Corporation Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devices
US20120084240A1 (en) * 2010-09-30 2012-04-05 International Business Machines Corporation Phase change memory synaptronic circuit for spiking computation, association and recall
CN102299692B (zh) * 2011-06-29 2013-06-12 北京大学 一种基于阻变器件的加法器电路
US11126720B2 (en) 2012-09-26 2021-09-21 Bluvector, Inc. System and method for automated machine-learning, zero-day malware detection
US9292688B2 (en) 2012-09-26 2016-03-22 Northrop Grumman Systems Corporation System and method for automated machine-learning, zero-day malware detection
US9076523B2 (en) * 2012-12-13 2015-07-07 Intermolecular, Inc. Methods of manufacturing embedded bipolar switching resistive memory
CN103078054B (zh) * 2013-01-04 2015-06-03 华中科技大学 一种模拟生物神经元和神经突触的单元、装置及方法
US9257175B2 (en) * 2013-09-26 2016-02-09 Intel Corporation Refresh of data stored in a cross-point non-volatile memory
GB2532086A (en) * 2014-11-10 2016-05-11 Provost Fellows Found Scholars & Other Members Board College Holy & Und An associative memory learning device
JP6916112B2 (ja) 2014-11-21 2021-08-11 ブルヴェクター, インコーポレーテッドBluvector, Inc. ネットワークデータ特性評価のシステムと方法
US10803941B2 (en) * 2014-12-22 2020-10-13 Mohammad A. Mazed System on chip (SoC) based on neural processor or microprocessor
WO2016129306A1 (ja) * 2015-02-10 2016-08-18 ソニー株式会社 選択素子およびメモリセルならびに記憶装置
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
RU2610058C1 (ru) * 2015-12-04 2017-02-07 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ получения материала фазовой памяти
EP3459020A2 (de) * 2016-05-17 2019-03-27 Arctic Alliance Ltd Datenverarbeitungssystem und -verfahren mit künstlicher intelligenz
CN110036443B (zh) * 2016-11-30 2023-08-08 国立研究开发法人科学技术振兴机构 神经元电路、信号传输系统以及开关电路
TWI659428B (zh) * 2018-01-12 2019-05-11 中原大學 運用非揮發性記憶體執行類神經網絡前饋與遞迴運算之方法
US10256974B1 (en) * 2018-04-25 2019-04-09 Blockchain Asics Llc Cryptographic ASIC for key hierarchy enforcement
US10454025B1 (en) 2018-06-13 2019-10-22 International Business Machines Corporation Phase change memory with gradual resistance change
US10741568B2 (en) * 2018-10-16 2020-08-11 Silicon Storage Technology, Inc. Precision tuning for the programming of analog neural memory in a deep learning artificial neural network

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166901A (en) * 1986-05-14 1992-11-24 Raytheon Company Programmable memory cell structure including a refractory metal barrier layer
US5159661A (en) * 1990-10-05 1992-10-27 Energy Conversion Devices, Inc. Vertically interconnected parallel distributed processor
US5536947A (en) * 1991-01-18 1996-07-16 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US5912839A (en) * 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same

Also Published As

Publication number Publication date
KR100636086B1 (ko) 2006-10-18
EP1104578A4 (de) 2004-08-25
WO2000062301A1 (en) 2000-10-19
JP2002541613A (ja) 2002-12-03
RU2216054C2 (ru) 2003-11-10
EP1104578B1 (de) 2007-12-05
EP1104578A1 (de) 2001-06-06
KR20010052795A (ko) 2001-06-25
US6141241A (en) 2000-10-31
DE60037301T2 (de) 2008-11-27
BR0006031A (pt) 2001-03-13
AU4081600A (en) 2000-11-14
CA2332867A1 (en) 2000-10-19
MXPA00011876A (es) 2002-10-31

Similar Documents

Publication Publication Date Title
DE60037301D1 (de) Universales speicherelement und systeme mit einem solchen element, sowie anordnung und verfahren zum lesen. schreiben und programmieren des elements.
DE69930987D1 (de) Fahrzeuginformationssystem und Verfahren zu dessen Steuerung, Speichermedium zur Speicherung des Steuerungsprogramms, Plattenwiedergabegerät, und integrierte Halbleiterschaltung
DE60031476D1 (de) Speichereinheiten, Datenverarbeitungseinheiten und zugehörige Verfahren
GB0425543D0 (en) Efficient read, write method for pipeline memory
DE69904320T2 (de) On-chip schaltung und verfahren zur speicherschaltungs-prüfung
DE69927342D1 (de) Kontaktlose chipkarte und verfahren zu ihrer herstellung
DE60127635D1 (de) Speicher, Verfahren und Anordnung zum Schreiben und Lesen
DE60132124D1 (de) Gerät und Verfahren zum Bereitstellen und Verarbeiten von Informationen, und Programmspeichermedium
EP1235381A4 (de) Vorrichtung und verfahren zur informationsverarbeitung und programmaufzeichnungsträger
SG100613A1 (en) Data processing method and system, program for realizing the method, and computer readable storage medium storing the program
EP2008696A4 (de) Rangvolgeerstellungssystem, rangvolgeerstellungsprogramm und aufnahmeverfahren zum speichern des programmes
EP1781034A4 (de) Pseudo-video-on-demand-system, steuerverfahren für ein pseudo-video-on-demand-system und programm und aufzeichnungsmedium dafür
PL372464A1 (en) Recording medium, recording apparatus, reading apparatus, and program and method therefore
GB0420351D0 (en) Storage system and data transfer method for the system
DE59912231D1 (de) Verfahren zum Speichern von Positionsdaten
DE60029194D1 (de) Verfahren, Vorrichtung und Speichermedium für Bildverarbeitung
DE60324117D1 (de) Multibit Speicheranordnung und Verfahren zur Programmierung und zum Auslesen derselben
EP1522994A4 (de) Informationsspeichermedium, informationsaufzeichnungseinrichtung und -verfahren, informationsaufzeichnungssteuerprogramm und das informationsaufzeichnungssteuerprogamm enthaltendes aufzeichnungsmedium
DE69915041D1 (de) Informationsverarbeitungsvorrichtung und -methode, und programmspeichermedium
DE60306021D1 (de) Navigationsvorrichtung, -verfahren sowie -programm zur Aktualisierung von Einrichtungsinformationen und Aufzeichnungsträger zum Speichern des Programms
NO20030311D0 (no) Brenseladditiv og fremgangsmåte for anvendelse av samme
DE69820594D1 (de) Anordnung und Verfahren zum Lesen von nichtflüchtigen Speicherzellen
AU3671300A (en) Method for providing literary work data, system for executing the method, and computer-readable recorded medium
EP1607970A4 (de) Informationsaufzeichnungseinrichtung, informationsaufzeichnungsverfahren, informationsaufzeichnungsprogramm und das informationsaufzeichnungsprogramm enthaltendes aufzeichnungsmedium
AU2003275600A1 (en) Cad sysetm, program for running the system, and recording medium having the program recorded therein

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee