DE60037684D1 - Element zum Einkoppeln von elektrischer Energie in eine Bearbeitungskammer und Bearbeitungssystem mit einem solchen Element - Google Patents

Element zum Einkoppeln von elektrischer Energie in eine Bearbeitungskammer und Bearbeitungssystem mit einem solchen Element

Info

Publication number
DE60037684D1
DE60037684D1 DE60037684T DE60037684T DE60037684D1 DE 60037684 D1 DE60037684 D1 DE 60037684D1 DE 60037684 T DE60037684 T DE 60037684T DE 60037684 T DE60037684 T DE 60037684T DE 60037684 D1 DE60037684 D1 DE 60037684D1
Authority
DE
Germany
Prior art keywords
electrical energy
coupling electrical
processing system
processing chamber
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037684T
Other languages
English (en)
Other versions
DE60037684T2 (de
Inventor
Josef Brcka
Paul Louis Consoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE60037684D1 publication Critical patent/DE60037684D1/de
Application granted granted Critical
Publication of DE60037684T2 publication Critical patent/DE60037684T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
DE60037684T 1999-03-26 2000-03-23 Element zum Einkoppeln von elektrischer Energie in eine Bearbeitungskammer und Bearbeitungssystem mit einem solchen Element Expired - Lifetime DE60037684T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/277,526 US6237526B1 (en) 1999-03-26 1999-03-26 Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US277526 1999-03-26

Publications (2)

Publication Number Publication Date
DE60037684D1 true DE60037684D1 (de) 2008-02-14
DE60037684T2 DE60037684T2 (de) 2009-01-02

Family

ID=23061252

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60037684T Expired - Lifetime DE60037684T2 (de) 1999-03-26 2000-03-23 Element zum Einkoppeln von elektrischer Energie in eine Bearbeitungskammer und Bearbeitungssystem mit einem solchen Element
DE60008711T Expired - Lifetime DE60008711T2 (de) 1999-03-26 2000-03-23 Apparat zur verbesserung der verteilung und leistung eines induktiven gekoppelten plasmas

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60008711T Expired - Lifetime DE60008711T2 (de) 1999-03-26 2000-03-23 Apparat zur verbesserung der verteilung und leistung eines induktiven gekoppelten plasmas

Country Status (8)

Country Link
US (1) US6237526B1 (de)
EP (2) EP1401008B1 (de)
JP (2) JP4982010B2 (de)
KR (1) KR100712762B1 (de)
CN (1) CN1201370C (de)
DE (2) DE60037684T2 (de)
TW (1) TW483064B (de)
WO (1) WO2000058995A2 (de)

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Also Published As

Publication number Publication date
JP2002540617A (ja) 2002-11-26
DE60008711T2 (de) 2005-03-17
KR20010110702A (ko) 2001-12-13
WO2000058995B1 (en) 2001-03-01
KR100712762B1 (ko) 2007-05-02
EP1401008B1 (de) 2008-01-02
CN1353859A (zh) 2002-06-12
WO2000058995A2 (en) 2000-10-05
WO2000058995A3 (en) 2001-01-25
EP1166324B1 (de) 2004-03-03
US6237526B1 (en) 2001-05-29
DE60008711D1 (de) 2004-04-08
EP1401008A1 (de) 2004-03-24
JP2011018650A (ja) 2011-01-27
DE60037684T2 (de) 2009-01-02
EP1166324A2 (de) 2002-01-02
TW483064B (en) 2002-04-11
CN1201370C (zh) 2005-05-11
JP4982010B2 (ja) 2012-07-25

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