DE60042666D1 - Halbleiterbauelement und Verfahren zu dessen Herstellung - Google Patents
Halbleiterbauelement und Verfahren zu dessen HerstellungInfo
- Publication number
- DE60042666D1 DE60042666D1 DE60042666T DE60042666T DE60042666D1 DE 60042666 D1 DE60042666 D1 DE 60042666D1 DE 60042666 T DE60042666 T DE 60042666T DE 60042666 T DE60042666 T DE 60042666T DE 60042666 D1 DE60042666 D1 DE 60042666D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP764199 | 1999-01-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60042666D1 true DE60042666D1 (de) | 2009-09-17 |
Family
ID=11671466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60042666T Expired - Lifetime DE60042666D1 (de) | 1999-01-14 | 2000-01-12 | Halbleiterbauelement und Verfahren zu dessen Herstellung |
Country Status (7)
Country | Link |
---|---|
US (2) | US6597016B1 (de) |
EP (1) | EP1020900B1 (de) |
JP (1) | JP3592981B2 (de) |
KR (1) | KR100648769B1 (de) |
CN (1) | CN1184694C (de) |
DE (1) | DE60042666D1 (de) |
TW (1) | TW439300B (de) |
Families Citing this family (111)
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KR100400808B1 (ko) * | 1997-06-24 | 2003-10-08 | 매사츄세츠 인스티튜트 오브 테크놀러지 | 그레이드된 GeSi층 및 평탄화를 사용한 Si상의 Ge의 쓰레딩 전위 밀도 제어 |
US7227176B2 (en) * | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
EP1020900B1 (de) * | 1999-01-14 | 2009-08-05 | Panasonic Corporation | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6993222B2 (en) | 1999-03-05 | 2006-01-31 | Rj Mears, Llc | Optical filter device with aperiodically arranged grating elements |
GB2385713B (en) | 1999-03-05 | 2003-10-15 | Nanovis Llc | Aperiodic electronic bandgap structure |
US6602613B1 (en) | 2000-01-20 | 2003-08-05 | Amberwave Systems Corporation | Heterointegration of materials using deposition and bonding |
AU2001263211A1 (en) | 2000-05-26 | 2001-12-11 | Amberwave Systems Corporation | Buried channel strained silicon fet using an ion implanted doped layer |
JP2004507084A (ja) | 2000-08-16 | 2004-03-04 | マサチューセッツ インスティテュート オブ テクノロジー | グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス |
US6649480B2 (en) | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6426265B1 (en) * | 2001-01-30 | 2002-07-30 | International Business Machines Corporation | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
US6724008B2 (en) | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6900103B2 (en) | 2001-03-02 | 2005-05-31 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6723661B2 (en) | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6593641B1 (en) | 2001-03-02 | 2003-07-15 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6646322B2 (en) | 2001-03-02 | 2003-11-11 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
WO2002071488A1 (en) * | 2001-03-02 | 2002-09-12 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits |
US6703688B1 (en) | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6815735B2 (en) | 2001-04-18 | 2004-11-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
WO2002103760A2 (en) | 2001-06-14 | 2002-12-27 | Amberware Systems Corporation | Method of selective removal of sige alloys |
US7301180B2 (en) | 2001-06-18 | 2007-11-27 | Massachusetts Institute Of Technology | Structure and method for a high-speed semiconductor device having a Ge channel layer |
US6916727B2 (en) | 2001-06-21 | 2005-07-12 | Massachusetts Institute Of Technology | Enhancement of P-type metal-oxide-semiconductor field effect transistors |
KR100426956B1 (ko) * | 2001-07-23 | 2004-04-17 | 한국과학기술원 | SiGe 에피층의 산화막 형성방법 |
US6730551B2 (en) | 2001-08-06 | 2004-05-04 | Massachusetts Institute Of Technology | Formation of planar strained layers |
US7138649B2 (en) | 2001-08-09 | 2006-11-21 | Amberwave Systems Corporation | Dual-channel CMOS transistors with differentially strained channels |
US6974735B2 (en) | 2001-08-09 | 2005-12-13 | Amberwave Systems Corporation | Dual layer Semiconductor Devices |
WO2003015138A2 (en) * | 2001-08-09 | 2003-02-20 | Amberwave Systems Corporation | Optimized buried-channel fets based on sige heterostructures |
WO2003025984A2 (en) | 2001-09-21 | 2003-03-27 | Amberwave Systems Corporation | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
AU2002341803A1 (en) | 2001-09-24 | 2003-04-07 | Amberwave Systems Corporation | Rf circuits including transistors having strained material layers |
KR100409435B1 (ko) * | 2002-05-07 | 2003-12-18 | 한국전자통신연구원 | 반도체 소자의 활성층 제조 방법 및 그를 이용한 모스트랜지스터 제조 방법 |
US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
WO2003105204A2 (en) | 2002-06-07 | 2003-12-18 | Amberwave Systems Corporation | Semiconductor devices having strained dual channel layers |
US20030227057A1 (en) | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
EP1530800B1 (de) | 2002-08-23 | 2016-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Halbleiter-heterostrukturen mit reduzierter anhäufung von versetzungen und entsprechende herstellungsverfahren |
US6818938B1 (en) * | 2002-12-10 | 2004-11-16 | National Semiconductor Corporation | MOS transistor and method of forming the transistor with a channel region in a layer of composite material |
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FR2853452B1 (fr) * | 2003-04-01 | 2005-08-19 | St Microelectronics Sa | Procede de fabrication d'un dispositif semiconducteur comprenant un dielectrique de grille en materiau a haute permittivite dielectrique |
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- 2000-01-12 DE DE60042666T patent/DE60042666D1/de not_active Expired - Lifetime
- 2000-01-12 JP JP2000003357A patent/JP3592981B2/ja not_active Expired - Fee Related
- 2000-01-13 US US09/482,076 patent/US6597016B1/en not_active Expired - Fee Related
- 2000-01-14 KR KR1020000001630A patent/KR100648769B1/ko not_active IP Right Cessation
- 2000-01-14 CN CNB001002910A patent/CN1184694C/zh not_active Expired - Fee Related
- 2000-01-14 TW TW089100542A patent/TW439300B/zh not_active IP Right Cessation
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JP2000269501A (ja) | 2000-09-29 |
EP1020900A3 (de) | 2000-09-20 |
CN1184694C (zh) | 2005-01-12 |
EP1020900A2 (de) | 2000-07-19 |
TW439300B (en) | 2001-06-07 |
US6597016B1 (en) | 2003-07-22 |
KR20000057756A (ko) | 2000-09-25 |
JP3592981B2 (ja) | 2004-11-24 |
CN1260595A (zh) | 2000-07-19 |
US20030162335A1 (en) | 2003-08-28 |
US7049198B2 (en) | 2006-05-23 |
KR100648769B1 (ko) | 2006-11-23 |
EP1020900B1 (de) | 2009-08-05 |
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