DE60044014D1 - Nichtflüssiger Halbleiterspeicher mit programmierbaren Verriegelungsschaltungen - Google Patents

Nichtflüssiger Halbleiterspeicher mit programmierbaren Verriegelungsschaltungen

Info

Publication number
DE60044014D1
DE60044014D1 DE60044014T DE60044014T DE60044014D1 DE 60044014 D1 DE60044014 D1 DE 60044014D1 DE 60044014 T DE60044014 T DE 60044014T DE 60044014 T DE60044014 T DE 60044014T DE 60044014 D1 DE60044014 D1 DE 60044014D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
latch circuits
programmable latch
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60044014T
Other languages
English (en)
Inventor
Koji Hosono
Toshihiko Himeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35139699A external-priority patent/JP2001176290A/ja
Priority claimed from JP2000330971A external-priority patent/JP3967537B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60044014D1 publication Critical patent/DE60044014D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
DE60044014T 1999-12-10 2000-12-11 Nichtflüssiger Halbleiterspeicher mit programmierbaren Verriegelungsschaltungen Expired - Lifetime DE60044014D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35139699A JP2001176290A (ja) 1999-12-10 1999-12-10 不揮発性半導体記憶装置
JP2000330971A JP3967537B2 (ja) 2000-10-30 2000-10-30 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
DE60044014D1 true DE60044014D1 (de) 2010-04-29

Family

ID=26579385

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60044014T Expired - Lifetime DE60044014D1 (de) 1999-12-10 2000-12-11 Nichtflüssiger Halbleiterspeicher mit programmierbaren Verriegelungsschaltungen

Country Status (4)

Country Link
US (5) US6462985B2 (de)
EP (1) EP1107121B1 (de)
KR (1) KR100377492B1 (de)
DE (1) DE60044014D1 (de)

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EP1107121B1 (de) 2010-03-17
US20050094478A1 (en) 2005-05-05
EP1107121A2 (de) 2001-06-13
US20070016738A1 (en) 2007-01-18
US20010003509A1 (en) 2001-06-14
KR20010070292A (ko) 2001-07-25
US6831859B2 (en) 2004-12-14
US20040080976A1 (en) 2004-04-29
US7619921B2 (en) 2009-11-17
US20030007385A1 (en) 2003-01-09
US7126851B2 (en) 2006-10-24
EP1107121A3 (de) 2004-08-25
US6704223B2 (en) 2004-03-09
KR100377492B1 (ko) 2003-03-26
US6462985B2 (en) 2002-10-08

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