DE60101069D1 - Siliziumkarbid und Verfahren zu seiner Herstellung - Google Patents
Siliziumkarbid und Verfahren zu seiner HerstellungInfo
- Publication number
- DE60101069D1 DE60101069D1 DE60101069T DE60101069T DE60101069D1 DE 60101069 D1 DE60101069 D1 DE 60101069D1 DE 60101069 T DE60101069 T DE 60101069T DE 60101069 T DE60101069 T DE 60101069T DE 60101069 D1 DE60101069 D1 DE 60101069D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- silicon carbide
- carbide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000242171 | 2000-08-10 | ||
| JP2000242171A JP3650727B2 (ja) | 2000-08-10 | 2000-08-10 | 炭化珪素製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60101069D1 true DE60101069D1 (de) | 2003-12-04 |
| DE60101069T2 DE60101069T2 (de) | 2004-07-22 |
Family
ID=18733230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60101069T Expired - Lifetime DE60101069T2 (de) | 2000-08-10 | 2001-08-10 | Siliziumkarbid und Verfahren zu seiner Herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20020019117A1 (de) |
| EP (1) | EP1179620B1 (de) |
| JP (1) | JP3650727B2 (de) |
| KR (1) | KR100450316B1 (de) |
| DE (1) | DE60101069T2 (de) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Ｈｏｙａ株式会社 | 炭化珪素製造方法 |
| JP2002220299A (ja) * | 2001-01-19 | 2002-08-09 | Hoya Corp | 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料 |
| US7527869B2 (en) * | 2001-06-04 | 2009-05-05 | Kwansei Gakuin Educational Foundation | Single crystal silicon carbide and method for producing the same |
| JP2003068655A (ja) * | 2001-08-27 | 2003-03-07 | Hoya Corp | 化合物単結晶の製造方法 |
| JP2003068654A (ja) | 2001-08-27 | 2003-03-07 | Hoya Corp | 化合物単結晶の製造方法 |
| JP2003095798A (ja) * | 2001-09-27 | 2003-04-03 | Hoya Corp | 単結晶基板の製造方法 |
| JP3915697B2 (ja) * | 2002-01-15 | 2007-05-16 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| SE525574C2 (sv) * | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
| JP4856350B2 (ja) | 2002-12-16 | 2012-01-18 | Ｈｏｙａ株式会社 | ダイオード |
| US6763699B1 (en) | 2003-02-06 | 2004-07-20 | The United States Of America As Represented By The Administrator Of Natural Aeronautics And Space Administration | Gas sensors using SiC semiconductors and method of fabrication thereof |
| US7061021B2 (en) * | 2003-05-01 | 2006-06-13 | The University Of South Carolina | System and method for fabricating diodes |
| US7638841B2 (en) * | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| KR100833834B1 (ko) * | 2004-03-24 | 2008-06-02 | 각코우호우징 메이조다이가쿠 | 형광체 및 발광 다이오드 |
| US7037773B2 (en) * | 2004-03-29 | 2006-05-02 | United Microelectronics Corp. | Method of manufacturing metal-oxide-semiconductor transistor |
| US20070169687A1 (en) * | 2006-01-26 | 2007-07-26 | Caracal, Inc. | Silicon carbide formation by alternating pulses |
| US7811914B1 (en) * | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
| TWI302043B (en) * | 2006-06-27 | 2008-10-11 | Everlight Electronics Co Ltd | Base structure for ultra-thin light-emitting diode and manufacturing method thereof |
| KR101369355B1 (ko) * | 2006-07-31 | 2014-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 층 형성 동안에 형태를 제어하는 방법 |
| JP5078314B2 (ja) * | 2006-10-18 | 2012-11-21 | ローム株式会社 | ショットキーバリアダイオードおよびその製造方法 |
| US7727919B2 (en) * | 2007-10-29 | 2010-06-01 | Saint-Gobain Ceramics & Plastics, Inc. | High resistivity silicon carbide |
| US20090208770A1 (en) * | 2008-02-14 | 2009-08-20 | Ralf Jonczyk | Semiconductor sheets and methods for fabricating the same |
| TWI440198B (zh) * | 2008-03-13 | 2014-06-01 | Nexpower Technology Corp | 薄膜疊層太陽能電池與其製作方法 |
| US20090280336A1 (en) * | 2008-05-08 | 2009-11-12 | Ralf Jonczyk | Semiconductor sheets and methods of fabricating the same |
| JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
| JP4853527B2 (ja) * | 2009-02-19 | 2012-01-11 | トヨタ自動車株式会社 | ｎ型ＳｉＣ単結晶の製造方法、それによって得られるｎ型ＳｉＣ単結晶およびその用途 |
| JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
| US8574528B2 (en) | 2009-09-04 | 2013-11-05 | University Of South Carolina | Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
| DE102009056162B4 (de) * | 2009-11-27 | 2015-12-24 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung einer defektarmen kristallinen Siliziumschicht auf einem Substrat mittels chemischer oder physikalischer Gasphasenabscheidung |
| JP5720140B2 (ja) * | 2010-08-13 | 2015-05-20 | セイコーエプソン株式会社 | 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法 |
| JP5648442B2 (ja) * | 2010-11-25 | 2015-01-07 | 住友電気工業株式会社 | 炭化珪素半導体 |
| JP5678622B2 (ja) * | 2010-12-03 | 2015-03-04 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
| JP5573725B2 (ja) * | 2011-02-21 | 2014-08-20 | セイコーエプソン株式会社 | 立方晶炭化珪素半導体基板の製造方法 |
| JP5415650B2 (ja) * | 2011-04-11 | 2014-02-12 | 新電元工業株式会社 | 炭化珪素半導体装置及びその製造方法 |
| JP5777437B2 (ja) * | 2011-07-27 | 2015-09-09 | 京セラ株式会社 | 単結晶基板およびそれを用いた半導体素子 |
| US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| TW201427052A (zh) * | 2012-11-05 | 2014-07-01 | Nusola Inc | 寬能隙光伏裝置及其製造方法 |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| JP2014187113A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 気相成長装置および気相成長方法 |
| JP5741652B2 (ja) * | 2013-08-30 | 2015-07-01 | トヨタ自動車株式会社 | ｎ型ＳｉＣ単結晶及びその製造方法 |
| JP6306411B2 (ja) * | 2014-04-17 | 2018-04-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP2014166957A (ja) * | 2014-04-24 | 2014-09-11 | Sumitomo Electric Ind Ltd | 炭化珪素半導体およびその製造方法と製造装置 |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| JP5896346B2 (ja) * | 2015-03-16 | 2016-03-30 | 住友電気工業株式会社 | 炭化珪素半導体 |
| JP2017055086A (ja) | 2015-09-11 | 2017-03-16 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置 |
| TWI660076B (zh) * | 2017-10-06 | 2019-05-21 | 環球晶圓股份有限公司 | 碳化矽晶體及其製造方法 |
| TWI723415B (zh) * | 2019-06-05 | 2021-04-01 | 環球晶圓股份有限公司 | 碳化矽晶體及碳化矽晶種片 |
| JP6723416B2 (ja) * | 2019-06-28 | 2020-07-15 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| JP7322594B2 (ja) * | 2019-08-23 | 2023-08-08 | 住友金属鉱山株式会社 | 炭化珪素基板及びその製造方法 |
| EP4001475A1 (de) | 2020-11-19 | 2022-05-25 | Zadient Technologies SAS | Verbessertes ofengerät zur herstellung von kristallen |
| CN115961346A (zh) * | 2022-12-29 | 2023-04-14 | 深圳市重投天科半导体有限公司 | 大尺寸碳化硅外延气体供应装置及供应方法 |
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| US2907972A (en) * | 1957-08-12 | 1959-10-06 | Carborundum Co | Process for producing silicon carbide bodies |
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| JPS6052120B2 (ja) * | 1982-06-04 | 1985-11-18 | タテホ化学工業株式会社 | 炭化珪素の製造方法 |
| JPS60255697A (ja) * | 1984-05-31 | 1985-12-17 | Sharp Corp | 炭化珪素単結晶の不純物濃度制御方法 |
| JPS60264399A (ja) * | 1984-06-11 | 1985-12-27 | Sharp Corp | 炭化珪素単結晶の製造方法 |
| US4599789A (en) * | 1984-06-15 | 1986-07-15 | Harris Corporation | Process of making twin well VLSI CMOS |
| JPS61242998A (ja) * | 1985-04-18 | 1986-10-29 | Sharp Corp | 炭化珪素単結晶半導体の製造方法 |
| JPS6395105A (ja) * | 1986-10-08 | 1988-04-26 | Bridgestone Corp | 炭化珪素の製造方法 |
| JP2546696B2 (ja) * | 1987-12-17 | 1996-10-23 | 富士通株式会社 | シリコン炭化層構造 |
| JP2534525B2 (ja) * | 1987-12-19 | 1996-09-18 | 富士通株式会社 | β−炭化シリコン層の製造方法 |
| JPH02172895A (ja) | 1988-12-22 | 1990-07-04 | Nec Corp | 半導体の結晶成長方法 |
| US5221411A (en) * | 1991-04-08 | 1993-06-22 | North Carolina State University | Method for synthesis and processing of continuous monocrystalline diamond thin films |
| JPH051380A (ja) | 1991-06-24 | 1993-01-08 | Hoya Corp | 炭化ケイ素の成膜方法 |
| JP2989051B2 (ja) * | 1991-09-24 | 1999-12-13 | ローム株式会社 | 炭化シリコンバイポーラ半導体装置およびその製造方法 |
| DE4234508C2 (de) | 1992-10-13 | 1994-12-22 | Cs Halbleiter Solartech | Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht |
| JPH06338629A (ja) | 1993-03-29 | 1994-12-06 | Sanyo Electric Co Ltd | 炭化ケイ素発光ダイオード素子 |
| US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
| JP3563093B2 (ja) | 1993-09-24 | 2004-09-08 | 住友電気工業株式会社 | 半導体装置 |
| US6440823B1 (en) * | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
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| US5759908A (en) | 1995-05-16 | 1998-06-02 | University Of Cincinnati | Method for forming SiC-SOI structures |
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| US7115955B2 (en) * | 2004-07-30 | 2006-10-03 | International Business Machines Corporation | Semiconductor device having a strained raised source/drain |
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-
2000
- 2000-08-10 JP JP2000242171A patent/JP3650727B2/ja not_active Expired - Fee Related
-
2001
- 2001-08-09 US US09/924,872 patent/US20020019117A1/en not_active Abandoned
- 2001-08-10 DE DE60101069T patent/DE60101069T2/de not_active Expired - Lifetime
- 2001-08-10 KR KR10-2001-0048181A patent/KR100450316B1/ko not_active IP Right Cessation
- 2001-08-10 EP EP01306838A patent/EP1179620B1/de not_active Expired - Lifetime
-
2004
- 2004-07-14 US US10/890,155 patent/US7166523B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60101069T2 (de) | 2004-07-22 |
| US20020019117A1 (en) | 2002-02-14 |
| KR100450316B1 (ko) | 2004-09-30 |
| JP3650727B2 (ja) | 2005-05-25 |
| US7166523B2 (en) | 2007-01-23 |
| EP1179620A1 (de) | 2002-02-13 |
| EP1179620B1 (de) | 2003-10-29 |
| KR20020013761A (ko) | 2002-02-21 |
| JP2002057109A (ja) | 2002-02-22 |
| US20040266057A1 (en) | 2004-12-30 |
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