DE60108328D1 - Differentielle Spannungsbewerterschaltung zum Bewerten des Zustands von CMOS-Prozess kompatiblen fuses bei niedrigen Versorgungsspannungen - Google Patents

Differentielle Spannungsbewerterschaltung zum Bewerten des Zustands von CMOS-Prozess kompatiblen fuses bei niedrigen Versorgungsspannungen

Info

Publication number
DE60108328D1
DE60108328D1 DE60108328T DE60108328T DE60108328D1 DE 60108328 D1 DE60108328 D1 DE 60108328D1 DE 60108328 T DE60108328 T DE 60108328T DE 60108328 T DE60108328 T DE 60108328T DE 60108328 D1 DE60108328 D1 DE 60108328D1
Authority
DE
Germany
Prior art keywords
differential voltage
state
cmos process
evaluating
supply voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60108328T
Other languages
English (en)
Other versions
DE60108328T2 (de
Inventor
James R Hellums
Heng-Chih Lin
Baher Haroun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE60108328D1 publication Critical patent/DE60108328D1/de
Application granted granted Critical
Publication of DE60108328T2 publication Critical patent/DE60108328T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
DE60108328T 2000-10-05 2001-10-02 Differentielle Spannungsbewerterschaltung zum Bewerten des Zustands von CMOS-Prozess kompatiblen fuses bei niedrigen Versorgungsspannungen Expired - Lifetime DE60108328T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US680811 1991-04-09
US09/680,811 US6384664B1 (en) 2000-10-05 2000-10-05 Differential voltage sense circuit to detect the state of a CMOS process compatible fuses at low power supply voltages

Publications (2)

Publication Number Publication Date
DE60108328D1 true DE60108328D1 (de) 2005-02-17
DE60108328T2 DE60108328T2 (de) 2005-12-22

Family

ID=24732610

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60108328T Expired - Lifetime DE60108328T2 (de) 2000-10-05 2001-10-02 Differentielle Spannungsbewerterschaltung zum Bewerten des Zustands von CMOS-Prozess kompatiblen fuses bei niedrigen Versorgungsspannungen

Country Status (7)

Country Link
US (1) US6384664B1 (de)
EP (1) EP1195771B1 (de)
JP (1) JP2002208296A (de)
KR (1) KR100864741B1 (de)
AT (1) ATE287120T1 (de)
DE (1) DE60108328T2 (de)
TW (1) TW563129B (de)

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US7760536B2 (en) * 2006-04-25 2010-07-20 Freescale Semiconductor, Inc. Non-volatile memory cell
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DE102006042115B4 (de) * 2006-09-07 2018-02-08 Ams Ag Schaltungsanordnung und Verfahren zum Betrieb einer Schaltungsanordnung
US7528646B2 (en) * 2006-10-19 2009-05-05 International Business Machines Corporation Electrically programmable fuse sense circuit
US7821859B1 (en) 2006-10-24 2010-10-26 Cypress Semiconductor Corporation Adaptive current sense amplifier with direct array access capability
US7501879B1 (en) 2007-03-13 2009-03-10 Xilinx, Inc. eFuse resistance sensing scheme with improved accuracy
JP5283975B2 (ja) * 2007-06-07 2013-09-04 ルネサスエレクトロニクス株式会社 半導体記憶装置ならびにそのデータ書込方法およびデータ読出方法
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US7550323B2 (en) * 2007-08-08 2009-06-23 International Business Machines Corporation Electrical fuse with a thinned fuselink middle portion
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US7742352B1 (en) 2007-10-30 2010-06-22 Silicon Laboratories Inc. Variable sense level for fuse-based non-volatile memory
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DE102008048830B4 (de) * 2008-09-25 2010-11-04 Austriamicrosystems Ag Schaltungsanordnung mit Schmelzsicherung und Verfahren zum Ermitteln eines Zustands einer Schmelzsicherung
US7960809B2 (en) * 2009-01-16 2011-06-14 International Business Machines Corporation eFuse with partial SiGe layer and design structure therefor
JP2010233140A (ja) 2009-03-30 2010-10-14 Hitachi Ltd 半導体集積回路装置
KR101123074B1 (ko) * 2009-04-30 2012-03-05 주식회사 하이닉스반도체 퓨즈 회로 및 그를 포함하는 반도체 장치
US8248079B2 (en) * 2009-09-21 2012-08-21 Nanya Technology Corporation Sensing circuit for sensing electric fuse and sensing method thereof
US8957694B2 (en) * 2012-05-22 2015-02-17 Broadcom Corporation Wafer level package resistance monitor scheme
CN105759369B (zh) * 2014-12-19 2018-03-09 华为技术有限公司 防止激光泄露的光模块和控制方法
CN106160744A (zh) * 2016-07-07 2016-11-23 合肥工业大学 一种应用在低电压环境中的高速动态锁存比较器
GB2568643B (en) * 2016-08-29 2020-11-25 Skyworks Solutions Inc Fuse state sensing circuits, devices and methods
CN106708155B (zh) * 2016-11-22 2017-12-26 成都芯源系统有限公司 集成电路及其电路特性调节方法
CN109256158A (zh) * 2018-08-16 2019-01-22 歌尔股份有限公司 感测电路
CN110995215B (zh) * 2019-12-16 2023-08-29 北京时代民芯科技有限公司 一种可调增益的高速高精度比较器电路
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Also Published As

Publication number Publication date
EP1195771A2 (de) 2002-04-10
EP1195771A3 (de) 2002-05-29
KR100864741B1 (ko) 2008-10-22
US6384664B1 (en) 2002-05-07
EP1195771B1 (de) 2005-01-12
DE60108328T2 (de) 2005-12-22
KR20020027231A (ko) 2002-04-13
ATE287120T1 (de) 2005-01-15
JP2002208296A (ja) 2002-07-26
TW563129B (en) 2003-11-21

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