DE60117132D1 - Speicherzelle mit dotierten nanokristallen, herstellungsverfahren und arbeitsweise - Google Patents

Speicherzelle mit dotierten nanokristallen, herstellungsverfahren und arbeitsweise

Info

Publication number
DE60117132D1
DE60117132D1 DE60117132T DE60117132T DE60117132D1 DE 60117132 D1 DE60117132 D1 DE 60117132D1 DE 60117132 T DE60117132 T DE 60117132T DE 60117132 T DE60117132 T DE 60117132T DE 60117132 D1 DE60117132 D1 DE 60117132D1
Authority
DE
Germany
Prior art keywords
nanocrystalles
doted
manufacturing
storage cell
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60117132T
Other languages
English (en)
Other versions
DE60117132T2 (de
Inventor
Ramachandran Muralidhar
Sucharita Madhukar
Bo Jiang
E White
B Samavedam
L O'meara
Alan Sadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE60117132D1 publication Critical patent/DE60117132D1/de
Publication of DE60117132T2 publication Critical patent/DE60117132T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7888—Transistors programmable by two single electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
DE60117132T 2000-03-14 2001-03-02 Speicherzelle mit dotierten nanokristallen, herstellungsverfahren und arbeitsweise Expired - Fee Related DE60117132T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/524,916 US6320784B1 (en) 2000-03-14 2000-03-14 Memory cell and method for programming thereof
US524916 2000-03-14
PCT/US2001/006842 WO2001069607A2 (en) 2000-03-14 2001-03-02 Memory cell, method of formation, and operation

Publications (2)

Publication Number Publication Date
DE60117132D1 true DE60117132D1 (de) 2006-04-20
DE60117132T2 DE60117132T2 (de) 2006-07-13

Family

ID=24091168

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60117132T Expired - Fee Related DE60117132T2 (de) 2000-03-14 2001-03-02 Speicherzelle mit dotierten nanokristallen, herstellungsverfahren und arbeitsweise

Country Status (8)

Country Link
US (1) US6320784B1 (de)
EP (1) EP1269477B1 (de)
JP (1) JP2003527747A (de)
KR (1) KR100705301B1 (de)
AU (1) AU2001247263A1 (de)
DE (1) DE60117132T2 (de)
TW (1) TW493268B (de)
WO (1) WO2001069607A2 (de)

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US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
KR100545706B1 (ko) * 2000-06-28 2006-01-24 주식회사 하이닉스반도체 반도체 소자 제조방법
US6400610B1 (en) * 2000-07-05 2002-06-04 Motorola, Inc. Memory device including isolated storage elements that utilize hole conduction and method therefor
US6602805B2 (en) * 2000-12-14 2003-08-05 Macronix International Co., Ltd. Method for forming gate dielectric layer in NROM
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US20020102797A1 (en) * 2001-02-01 2002-08-01 Muller David A. Composite gate dielectric layer
US6531731B2 (en) * 2001-06-15 2003-03-11 Motorola, Inc. Integration of two memory types on the same integrated circuit
US6455890B1 (en) * 2001-09-05 2002-09-24 Macronix International Co., Ltd. Structure of fabricating high gate performance for NROM technology
US6656792B2 (en) * 2001-10-19 2003-12-02 Chartered Semiconductor Manufacturing Ltd Nanocrystal flash memory device and manufacturing method therefor
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6750066B1 (en) * 2002-04-08 2004-06-15 Advanced Micro Devices, Inc. Precision high-K intergate dielectric layer
US7105425B1 (en) * 2002-05-16 2006-09-12 Advanced Micro Devices, Inc. Single electron devices formed by laser thermal annealing
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US7193893B2 (en) * 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
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US7847344B2 (en) 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
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US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
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US7045851B2 (en) * 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
DE10336876B4 (de) * 2003-08-11 2006-08-24 Infineon Technologies Ag Speicherzelle mit Nanokristallen oder Nanodots und Verfahren zu deren Herstellung
US6958265B2 (en) * 2003-09-16 2005-10-25 Freescale Semiconductor, Inc. Semiconductor device with nanoclusters
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Also Published As

Publication number Publication date
KR20020092383A (ko) 2002-12-11
EP1269477B1 (de) 2006-02-08
TW493268B (en) 2002-07-01
AU2001247263A1 (en) 2001-09-24
WO2001069607A2 (en) 2001-09-20
EP1269477A2 (de) 2003-01-02
DE60117132T2 (de) 2006-07-13
JP2003527747A (ja) 2003-09-16
KR100705301B1 (ko) 2007-04-11
WO2001069607A3 (en) 2002-03-21
US6320784B1 (en) 2001-11-20

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