DE60118024D1 - Selbstreinigendes optisches gerät für die euv-lithographie - Google Patents

Selbstreinigendes optisches gerät für die euv-lithographie

Info

Publication number
DE60118024D1
DE60118024D1 DE60118024T DE60118024T DE60118024D1 DE 60118024 D1 DE60118024 D1 DE 60118024D1 DE 60118024 T DE60118024 T DE 60118024T DE 60118024 T DE60118024 T DE 60118024T DE 60118024 D1 DE60118024 D1 DE 60118024D1
Authority
DE
Germany
Prior art keywords
self
optical device
euv lithography
cleaning optical
euv
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60118024T
Other languages
English (en)
Other versions
DE60118024T2 (de
Inventor
Leonard Klebanoff
Richard H Stulen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUV LLC
Original Assignee
EUV LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25036722&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60118024(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by EUV LLC filed Critical EUV LLC
Publication of DE60118024D1 publication Critical patent/DE60118024D1/de
Application granted granted Critical
Publication of DE60118024T2 publication Critical patent/DE60118024T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00—Methods preventing fouling
    • B08B17/02—Preventing deposition of fouling or of dust
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
DE60118024T 2001-01-03 2001-12-12 Selbstreinigendes optisches gerät für die euv-lithographie Expired - Lifetime DE60118024T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/754,869 US6664554B2 (en) 2001-01-03 2001-01-03 Self-cleaning optic for extreme ultraviolet lithography
US754869 2001-01-03
PCT/US2001/044707 WO2002054115A2 (en) 2001-01-03 2001-12-12 A self-cleaning optic for extreme ultraviolet lithography

Publications (2)

Publication Number Publication Date
DE60118024D1 true DE60118024D1 (de) 2006-05-11
DE60118024T2 DE60118024T2 (de) 2006-11-02

Family

ID=25036722

Family Applications (2)

Application Number Title Priority Date Filing Date
DE0001364231T Pending DE01987139T1 (de) 2001-01-03 2001-12-12 Selbstreinigendes optisches gerät für die euv-lithographie
DE60118024T Expired - Lifetime DE60118024T2 (de) 2001-01-03 2001-12-12 Selbstreinigendes optisches gerät für die euv-lithographie

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE0001364231T Pending DE01987139T1 (de) 2001-01-03 2001-12-12 Selbstreinigendes optisches gerät für die euv-lithographie

Country Status (8)

Country Link
US (1) US6664554B2 (de)
EP (1) EP1364231B1 (de)
JP (1) JP4109112B2 (de)
KR (1) KR100852985B1 (de)
AT (1) ATE320611T1 (de)
AU (1) AU2002239385A1 (de)
DE (2) DE01987139T1 (de)
WO (1) WO2002054115A2 (de)

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US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
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DE102006042987B4 (de) * 2006-09-13 2012-01-19 Asml Netherlands B.V. Verfahren zum Betrieb einer EUV-Lithographievorrichtung, reflektives optisches Element für EUV-Lithographievorrichtung und Verfahren zu dessen Reinigung
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JP5622353B2 (ja) * 2007-05-07 2014-11-12 本荘ケミカル株式会社 気相中の一酸化炭素を二酸化炭素に光酸化する方法
NL1034039C2 (nl) * 2007-06-26 2008-12-30 Stichting Fund Ond Material Werkwijze voor het beschermen van een optisch element in een stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied en stralingsbron.
US7671348B2 (en) * 2007-06-26 2010-03-02 Advanced Micro Devices, Inc. Hydrocarbon getter for lithographic exposure tools
DE102008041628A1 (de) * 2007-09-14 2009-03-19 Carl Zeiss Smt Ag Verfahren zur Reinigung von Vakuumkammern und Vakuumkammer
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KR101456320B1 (ko) * 2007-11-06 2014-11-03 칼 짜이스 에스엠티 게엠베하 광학면으로부터 오염층을 제거하는 방법, 세정 가스를 생성하는 방법 및 대응하는 세정 및 세정 가스 생성 장치들
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DE102015207140A1 (de) 2015-04-20 2016-10-20 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102016208987A1 (de) 2016-05-24 2017-11-30 Carl Zeiss Smt Gmbh Optisches Element und EUV-Lithographiesystem
DE102016213831A1 (de) 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102017213181A1 (de) 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas
DE102017222690A1 (de) 2017-12-14 2018-02-15 Carl Zeiss Smt Gmbh Optisches Element mit einem Wasserstoff-Desorptionsmaterial
KR102402767B1 (ko) * 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법
NL2022644A (en) 2018-03-05 2019-09-10 Asml Netherlands Bv Prolonging optical element lifetime in an euv lithography system
CN109254338A (zh) * 2018-10-26 2019-01-22 中国科学院长春光学精密机械与物理研究所 一种19.5nm多层膜反射镜
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DE102020206117A1 (de) 2020-05-14 2021-11-18 Carl Zeiss Smt Gmbh Optisches Element, EUV-Lithographiesystem und Verfahren zum Bilden von Nanopartikeln
EP3933882A1 (de) 2020-07-01 2022-01-05 Carl Zeiss SMT GmbH Vorrichtung und verfahren zur atomlagenverarbeitung
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DE102021214362A1 (de) 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Verfahren zur Herstellung einer Schutzabdeckung und EUV-Lithographiesystem

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Also Published As

Publication number Publication date
WO2002054115A2 (en) 2002-07-11
DE01987139T1 (de) 2004-05-19
JP2004517484A (ja) 2004-06-10
US20020084425A1 (en) 2002-07-04
US6664554B2 (en) 2003-12-16
WO2002054115A3 (en) 2003-09-25
AU2002239385A1 (en) 2002-07-16
KR20030072588A (ko) 2003-09-15
DE60118024T2 (de) 2006-11-02
JP4109112B2 (ja) 2008-07-02
EP1364231B1 (de) 2006-03-15
EP1364231A2 (de) 2003-11-26
ATE320611T1 (de) 2006-04-15
KR100852985B1 (ko) 2008-08-19

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