DE60126033D1 - Dünnschichtresonator mit säulenförmiger Struktur und vergrösserter Bandbreite - Google Patents
Dünnschichtresonator mit säulenförmiger Struktur und vergrösserter BandbreiteInfo
- Publication number
- DE60126033D1 DE60126033D1 DE60126033T DE60126033T DE60126033D1 DE 60126033 D1 DE60126033 D1 DE 60126033D1 DE 60126033 T DE60126033 T DE 60126033T DE 60126033 T DE60126033 T DE 60126033T DE 60126033 D1 DE60126033 D1 DE 60126033D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- columnar structure
- film resonator
- increased bandwidth
- bandwidth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US669944 | 2000-09-26 | ||
US09/669,944 US6486751B1 (en) | 2000-09-26 | 2000-09-26 | Increased bandwidth thin film resonator having a columnar structure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60126033D1 true DE60126033D1 (de) | 2007-03-08 |
DE60126033T2 DE60126033T2 (de) | 2007-08-16 |
Family
ID=24688380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60126033T Expired - Lifetime DE60126033T2 (de) | 2000-09-26 | 2001-09-20 | Dünnschichtresonator mit säulenförmiger Struktur und vergrösserter Bandbreite |
Country Status (5)
Country | Link |
---|---|
US (1) | US6486751B1 (de) |
EP (1) | EP1191688B1 (de) |
JP (1) | JP5010787B2 (de) |
DE (1) | DE60126033T2 (de) |
HK (1) | HK1044233A1 (de) |
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KR19990003712A (ko) * | 1997-06-26 | 1999-01-15 | 김영환 | 초고개구율 액정 표시 소자 및 그의 제조방법 |
US5894647A (en) | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
US5883575A (en) | 1997-08-12 | 1999-03-16 | Hewlett-Packard Company | RF-tags utilizing thin film bulk wave acoustic resonators |
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US6060818A (en) | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
FI108583B (fi) | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
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US6215375B1 (en) | 1999-03-30 | 2001-04-10 | Agilent Technologies, Inc. | Bulk acoustic wave resonator with improved lateral mode suppression |
JP4327942B2 (ja) | 1999-05-20 | 2009-09-09 | Tdk株式会社 | 薄膜圧電素子 |
JP3723697B2 (ja) * | 1999-05-31 | 2005-12-07 | 京セラ株式会社 | 圧電共振子 |
US6252290B1 (en) * | 1999-10-25 | 2001-06-26 | Chartered Semiconductor Manufacturing Ltd. | Method to form, and structure of, a dual damascene interconnect device |
-
2000
- 2000-09-26 US US09/669,944 patent/US6486751B1/en not_active Expired - Lifetime
-
2001
- 2001-09-20 DE DE60126033T patent/DE60126033T2/de not_active Expired - Lifetime
- 2001-09-20 EP EP01308025A patent/EP1191688B1/de not_active Expired - Lifetime
- 2001-09-26 JP JP2001294736A patent/JP5010787B2/ja not_active Expired - Fee Related
-
2002
- 2002-08-07 HK HK02105779.4A patent/HK1044233A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1191688A2 (de) | 2002-03-27 |
JP5010787B2 (ja) | 2012-08-29 |
DE60126033T2 (de) | 2007-08-16 |
JP2002175081A (ja) | 2002-06-21 |
EP1191688A3 (de) | 2004-01-21 |
HK1044233A1 (zh) | 2002-10-11 |
EP1191688B1 (de) | 2007-01-17 |
US6486751B1 (en) | 2002-11-26 |
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