DE60126837D1 - Metall-zu-metall-antihaftstruktur und herstellungsverfahren - Google Patents

Metall-zu-metall-antihaftstruktur und herstellungsverfahren

Info

Publication number
DE60126837D1
DE60126837D1 DE60126837T DE60126837T DE60126837D1 DE 60126837 D1 DE60126837 D1 DE 60126837D1 DE 60126837 T DE60126837 T DE 60126837T DE 60126837 T DE60126837 T DE 60126837T DE 60126837 D1 DE60126837 D1 DE 60126837D1
Authority
DE
Germany
Prior art keywords
metal
manufacturing
metal anti
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60126837T
Other languages
English (en)
Other versions
DE60126837T2 (de
Inventor
C Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi SoC Corp
Original Assignee
Actel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Actel Corp filed Critical Actel Corp
Application granted granted Critical
Publication of DE60126837D1 publication Critical patent/DE60126837D1/de
Publication of DE60126837T2 publication Critical patent/DE60126837T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/957—Making metal-insulator-metal device
DE60126837T 2000-12-14 2001-12-13 Metall-zu-metall-antihaftstruktur und herstellungsverfahren Expired - Lifetime DE60126837T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/737,642 US6809398B2 (en) 2000-12-14 2000-12-14 Metal-to-metal antifuse structure and fabrication method
US737642 2000-12-14
PCT/US2001/049300 WO2002061802A2 (en) 2000-12-14 2001-12-13 Metal-to-metal antifuse structure and fabrication method

Publications (2)

Publication Number Publication Date
DE60126837D1 true DE60126837D1 (de) 2007-04-05
DE60126837T2 DE60126837T2 (de) 2007-11-08

Family

ID=24964693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60126837T Expired - Lifetime DE60126837T2 (de) 2000-12-14 2001-12-13 Metall-zu-metall-antihaftstruktur und herstellungsverfahren

Country Status (6)

Country Link
US (1) US6809398B2 (de)
EP (1) EP1384264B1 (de)
JP (1) JP2005502999A (de)
AU (1) AU2002237727A1 (de)
DE (1) DE60126837T2 (de)
WO (1) WO2002061802A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6991970B2 (en) * 2001-08-30 2006-01-31 Micron Technology, Inc. Method and apparatus for circuit completion through the use of ball bonds or other connections during the formation of semiconductor device
US20030062596A1 (en) * 2001-10-02 2003-04-03 Actel Corporation Metal-to-metal antifuse employing carbon-containing antifuse material
US7390726B1 (en) 2001-10-02 2008-06-24 Actel Corporation Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
US6728126B1 (en) 2002-12-20 2004-04-27 Actel Corporation Programming methods for an amorphous carbon metal-to-metal antifuse
US7459763B1 (en) * 2001-10-02 2008-12-02 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
US6965156B1 (en) 2002-12-27 2005-11-15 Actel Corporation Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
US20030134499A1 (en) * 2002-01-15 2003-07-17 International Business Machines Corporation Bilayer HDP CVD / PE CVD cap in advanced BEOL interconnect structures and method thereof
FR2842351A1 (fr) * 2002-07-12 2004-01-16 St Microelectronics Sa Adaptation d'un circuit integre a des besoins specifiques
CN1577832A (zh) * 2003-07-07 2005-02-09 松下电器产业株式会社 半导体器件及其制造方法
JP4989037B2 (ja) * 2004-04-05 2012-08-01 セイコーインスツル株式会社 容量型力学量センサおよび半導体装置
KR100579863B1 (ko) * 2004-12-29 2006-05-12 동부일렉트로닉스 주식회사 반도체 소자상 퓨주부 형성 방법 및 퓨주부를 포함하는반도체 소자
US20070145594A1 (en) * 2005-12-28 2007-06-28 Dongbu Electronics Co., Ltd. Semiconductor device and method for manufacturing the same
US11145591B2 (en) 2019-11-18 2021-10-12 International Business Machines Corporation Integrated circuit (IC) device integral capacitor and anti-fuse

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748490A (en) 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
US5010039A (en) 1989-05-15 1991-04-23 Ku San Mei Method of forming contacts to a semiconductor device
US5021849A (en) 1989-10-30 1991-06-04 Motorola, Inc. Compact SRAM cell with polycrystalline silicon diode load
US5070384A (en) 1990-04-12 1991-12-03 Actel Corporation Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5541441A (en) * 1994-10-06 1996-07-30 Actel Corporation Metal to metal antifuse
US5272101A (en) 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5059555A (en) 1990-08-20 1991-10-22 National Semiconductor Corporation Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer
JP3256603B2 (ja) * 1993-07-05 2002-02-12 株式会社東芝 半導体装置及びその製造方法
EP0774164A1 (de) * 1995-06-02 1997-05-21 Actel Corporation Antisicherung mit erhöhten wolfram-stiften und herstellungsverfahren
US5602053A (en) * 1996-04-08 1997-02-11 Chartered Semidconductor Manufacturing Pte, Ltd. Method of making a dual damascene antifuse structure
US6515343B1 (en) * 1998-11-19 2003-02-04 Quicklogic Corporation Metal-to-metal antifuse with non-conductive diffusion barrier
US6124194A (en) * 1999-11-15 2000-09-26 Chartered Semiconductor Manufacturing Ltd. Method of fabrication of anti-fuse integrated with dual damascene process

Also Published As

Publication number Publication date
DE60126837T2 (de) 2007-11-08
JP2005502999A (ja) 2005-01-27
WO2002061802A3 (en) 2003-12-04
US6809398B2 (en) 2004-10-26
AU2002237727A1 (en) 2002-08-12
US20020100907A1 (en) 2002-08-01
WO2002061802A9 (en) 2003-08-07
EP1384264B1 (de) 2007-02-21
EP1384264A2 (de) 2004-01-28
WO2002061802A2 (en) 2002-08-08

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: WANG, DANIEL, C., SAN JOSE, CA 95130, US

8364 No opposition during term of opposition