DE60130213D1 - Silanhaltige polierzusammensetzung für cmp - Google Patents

Silanhaltige polierzusammensetzung für cmp

Info

Publication number
DE60130213D1
DE60130213D1 DE60130213T DE60130213T DE60130213D1 DE 60130213 D1 DE60130213 D1 DE 60130213D1 DE 60130213 T DE60130213 T DE 60130213T DE 60130213 T DE60130213 T DE 60130213T DE 60130213 D1 DE60130213 D1 DE 60130213D1
Authority
DE
Germany
Prior art keywords
cmp
polishing composition
silicone
hydrolyzable substituent
substituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60130213T
Other languages
English (en)
Other versions
DE60130213T2 (de
Inventor
Steven K Grumbine
Shumin Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE60130213D1 publication Critical patent/DE60130213D1/de
Application granted granted Critical
Publication of DE60130213T2 publication Critical patent/DE60130213T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
DE60130213T 2000-07-05 2001-06-14 Silanhaltige Polierzusammensetzung für Chemisch-Mechanisches Polieren Expired - Lifetime DE60130213T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US609480 1990-11-05
US09/609,480 US6646348B1 (en) 2000-07-05 2000-07-05 Silane containing polishing composition for CMP
PCT/US2001/019191 WO2002002707A1 (en) 2000-07-05 2001-06-14 Silane containing polishing composition for cmp

Publications (2)

Publication Number Publication Date
DE60130213D1 true DE60130213D1 (de) 2007-10-11
DE60130213T2 DE60130213T2 (de) 2007-12-20

Family

ID=24440985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130213T Expired - Lifetime DE60130213T2 (de) 2000-07-05 2001-06-14 Silanhaltige Polierzusammensetzung für Chemisch-Mechanisches Polieren

Country Status (9)

Country Link
US (2) US6646348B1 (de)
EP (2) EP1299490B1 (de)
JP (1) JP2004502824A (de)
CN (1) CN1249185C (de)
AT (1) ATE371708T1 (de)
AU (1) AU2001269841A1 (de)
DE (1) DE60130213T2 (de)
TW (1) TWI279426B (de)
WO (1) WO2002002707A1 (de)

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CN103498160B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103484876B (zh) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 一种除锈浆料
CN103498158B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103498159B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103484867B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN103498161B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN103526207B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种除锈浆料
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
CN104745083B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
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US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
JP6170027B2 (ja) * 2014-10-09 2017-07-26 信越化学工業株式会社 Ｃｍｐ研磨剤及びその製造方法、並びに基板の研磨方法
CN105802511A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
US10167425B2 (en) * 2016-05-04 2019-01-01 Oci Company Ltd. Etching solution capable of suppressing particle appearance
CN106010297B (zh) * 2016-06-20 2018-07-31 上海新安纳电子科技有限公司 一种氧化铝抛光液的制备方法
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
TWI755060B (zh) * 2019-11-15 2022-02-11 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物以及化學機械研磨方法
CN111087930A (zh) * 2019-12-23 2020-05-01 长江存储科技有限责任公司 一种化学机械抛光研磨剂的制备方法及化学机械抛光方法

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Also Published As

Publication number Publication date
EP1299490A1 (de) 2003-04-09
DE60130213T2 (de) 2007-12-20
EP1852481A1 (de) 2007-11-07
EP1852481B1 (de) 2012-09-05
JP2004502824A (ja) 2004-01-29
CN1440449A (zh) 2003-09-03
US6646348B1 (en) 2003-11-11
TWI279426B (en) 2007-04-21
ATE371708T1 (de) 2007-09-15
CN1249185C (zh) 2006-04-05
US20040214443A1 (en) 2004-10-28
WO2002002707A1 (en) 2002-01-10
EP1299490B1 (de) 2007-08-29
AU2001269841A1 (en) 2002-01-14

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