DE60135553D1 - Sensor mit einem dynamischen halteglied - Google Patents

Sensor mit einem dynamischen halteglied

Info

Publication number
DE60135553D1
DE60135553D1 DE60135553T DE60135553T DE60135553D1 DE 60135553 D1 DE60135553 D1 DE 60135553D1 DE 60135553 T DE60135553 T DE 60135553T DE 60135553 T DE60135553 T DE 60135553T DE 60135553 D1 DE60135553 D1 DE 60135553D1
Authority
DE
Germany
Prior art keywords
sensor
coupled
gain amplifier
circuit
nodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135553T
Other languages
English (en)
Inventor
Mark R Plagens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Application granted granted Critical
Publication of DE60135553D1 publication Critical patent/DE60135553D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2865—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/24—Storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/945—Proximity switches
    • H03K17/95—Proximity switches using a magnetic detector
    • H03K17/9517—Proximity switches using a magnetic detector using galvanomagnetic devices
DE60135553T 2000-04-10 2001-04-09 Sensor mit einem dynamischen halteglied Expired - Lifetime DE60135553D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/547,066 US6333647B1 (en) 2000-04-10 2000-04-10 Sensor with dynamic latch
PCT/US2001/011262 WO2001078232A2 (en) 2000-04-10 2001-04-09 Sensor with a dynamic latch

Publications (1)

Publication Number Publication Date
DE60135553D1 true DE60135553D1 (de) 2008-10-09

Family

ID=24183209

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135553T Expired - Lifetime DE60135553D1 (de) 2000-04-10 2001-04-09 Sensor mit einem dynamischen halteglied

Country Status (6)

Country Link
US (2) US6333647B1 (de)
EP (1) EP1299949B1 (de)
JP (1) JP2003530752A (de)
AT (1) ATE406693T1 (de)
DE (1) DE60135553D1 (de)
WO (1) WO2001078232A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100370240B1 (ko) * 2000-10-31 2003-02-05 삼성전자 주식회사 안정도와 증폭도 개선을 위한 반도체 메모리 장치의 전류감지 증폭 회로
US7663442B2 (en) * 2005-03-28 2010-02-16 Intel Corporation Data receiver including a transconductance amplifier
US8008908B2 (en) * 2007-06-25 2011-08-30 Allegro Microsystems, Inc. Low power magnetic field sensor
US7834725B2 (en) * 2007-09-05 2010-11-16 The Smartpill Corporation Magnetic activation and deactivation circuit and system
US8222888B2 (en) * 2008-09-29 2012-07-17 Allegro Microsystems, Inc. Micro-power magnetic switch
US8718721B2 (en) 2010-06-10 2014-05-06 Blackberry Limited Mobile wireless communications device including a magnetically conductive body and related methods
US8836375B2 (en) 2012-09-06 2014-09-16 Lsi Corporation Continuously self-calibrated latched comparator
BR102012026533A2 (pt) * 2012-10-16 2014-09-30 Continental Brasil Ind Automotiva Ltda Circuito de selção biestável, circuito integrado de seleção biestável, método de seleção e sistema de alarme automotivo

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3597629A (en) * 1968-08-20 1971-08-03 Gulf & Western Industries Temporary memory restore circuit for multivibrator
US5138186A (en) * 1990-07-13 1992-08-11 Illinois Tool Works Inc. Solid state switch with last state memory
US5151591A (en) 1991-03-20 1992-09-29 Honeywell Inc. Asynchronous signal interrogation circuit for an detection apparatus
US5332931A (en) * 1991-06-24 1994-07-26 Harris Corporation High speed differential comparator
US5539339A (en) * 1994-06-15 1996-07-23 U.S. Philips Corporation Differential load stage with stepwise variable impedance, and clocked comparator comprising such a load stage
US5619137A (en) 1996-02-12 1997-04-08 Allegro Microsystems, Inc. Chopped low power magnetic-field detector with hysteresis memory
IT1286037B1 (it) * 1996-10-25 1998-07-07 Sgs Thomson Microelectronics Circuito per la abilitazione selettiva di una pluralita' di alternative circuitali di un circuito integrato

Also Published As

Publication number Publication date
WO2001078232A3 (en) 2002-03-21
WO2001078232A2 (en) 2001-10-18
US6333647B1 (en) 2001-12-25
EP1299949A2 (de) 2003-04-09
EP1299949B1 (de) 2008-08-27
ATE406693T1 (de) 2008-09-15
US6424182B1 (en) 2002-07-23
JP2003530752A (ja) 2003-10-14
US20020036530A1 (en) 2002-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition