DE60136574D1 - Multiportspeicher auf Basis von DRAM - Google Patents

Multiportspeicher auf Basis von DRAM

Info

Publication number
DE60136574D1
DE60136574D1 DE60136574T DE60136574T DE60136574D1 DE 60136574 D1 DE60136574 D1 DE 60136574D1 DE 60136574 T DE60136574 T DE 60136574T DE 60136574 T DE60136574 T DE 60136574T DE 60136574 D1 DE60136574 D1 DE 60136574D1
Authority
DE
Germany
Prior art keywords
dram
memory based
multiport memory
multiport
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136574T
Other languages
English (en)
Inventor
Yasurou Matsuzaki
Takaaki Suzuki
Masafumi Yamazaki
Kenichi Kawasaki
Shinnosuke Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000387891A external-priority patent/JP5070656B2/ja
Priority claimed from JP2000398893A external-priority patent/JP4783501B2/ja
Priority claimed from JP2000399052A external-priority patent/JP4997663B2/ja
Priority claimed from JP2001034361A external-priority patent/JP4824180B2/ja
Priority claimed from JP2001037547A external-priority patent/JP5028710B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60136574D1 publication Critical patent/DE60136574D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/107—Serial-parallel conversion of data or prefetch

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE60136574T 2000-12-20 2001-10-02 Multiportspeicher auf Basis von DRAM Expired - Lifetime DE60136574D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000387891A JP5070656B2 (ja) 2000-12-20 2000-12-20 半導体記憶装置
JP2000398893A JP4783501B2 (ja) 2000-12-27 2000-12-27 半導体記憶装置
JP2000399052A JP4997663B2 (ja) 2000-12-27 2000-12-27 マルチポートメモリおよびその制御方法
JP2001034361A JP4824180B2 (ja) 2001-02-09 2001-02-09 半導体記憶装置
JP2001037547A JP5028710B2 (ja) 2001-02-14 2001-02-14 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE60136574D1 true DE60136574D1 (de) 2008-12-24

Family

ID=27531745

Family Applications (4)

Application Number Title Priority Date Filing Date
DE60132382T Expired - Lifetime DE60132382T2 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von DRAM
DE60112701T Expired - Lifetime DE60112701T2 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von DRAM
DE60142756T Expired - Lifetime DE60142756D1 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von mehreren Speicherkernen
DE60136574T Expired - Lifetime DE60136574D1 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von DRAM

Family Applications Before (3)

Application Number Title Priority Date Filing Date
DE60132382T Expired - Lifetime DE60132382T2 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von DRAM
DE60112701T Expired - Lifetime DE60112701T2 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von DRAM
DE60142756T Expired - Lifetime DE60142756D1 (de) 2000-12-20 2001-10-02 Multiportspeicher auf Basis von mehreren Speicherkernen

Country Status (6)

Country Link
US (1) US20020078311A1 (de)
EP (4) EP1564748B1 (de)
KR (1) KR100801119B1 (de)
CN (1) CN1271636C (de)
DE (4) DE60132382T2 (de)
TW (1) TW526500B (de)

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Also Published As

Publication number Publication date
EP1564748A2 (de) 2005-08-17
EP1564749B1 (de) 2008-11-12
EP1564749A2 (de) 2005-08-17
DE60142756D1 (de) 2010-09-16
DE60132382T2 (de) 2008-07-24
EP1564748A3 (de) 2006-03-29
KR20020050092A (ko) 2002-06-26
EP1564749B8 (de) 2009-02-18
EP1564749A3 (de) 2006-03-29
EP1220226A2 (de) 2002-07-03
EP1808861B1 (de) 2010-08-04
EP1220226A3 (de) 2002-12-18
EP1220226B1 (de) 2005-08-17
US20020078311A1 (en) 2002-06-20
DE60112701T2 (de) 2006-05-18
KR100801119B1 (ko) 2008-02-05
TW526500B (en) 2003-04-01
EP1564748B1 (de) 2008-01-09
DE60112701D1 (de) 2005-09-22
DE60132382D1 (de) 2008-02-21
CN1360314A (zh) 2002-07-24
EP1808861A1 (de) 2007-07-18
CN1271636C (zh) 2006-08-23

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