DE60139258D1 - Einkristalline siliziumscheibe und solarzelle - Google Patents

Einkristalline siliziumscheibe und solarzelle

Info

Publication number
DE60139258D1
DE60139258D1 DE60139258T DE60139258T DE60139258D1 DE 60139258 D1 DE60139258 D1 DE 60139258D1 DE 60139258 T DE60139258 T DE 60139258T DE 60139258 T DE60139258 T DE 60139258T DE 60139258 D1 DE60139258 D1 DE 60139258D1
Authority
DE
Germany
Prior art keywords
solar cell
crystalline silicon
silicon screen
screen
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139258T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Shigetoshi Sugawa
Tatsuo Ito
Koichi Kanaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18705372&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60139258(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60139258D1 publication Critical patent/DE60139258D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
DE60139258T 2000-07-10 2001-07-06 Einkristalline siliziumscheibe und solarzelle Expired - Lifetime DE60139258D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000208870A JP3910004B2 (ja) 2000-07-10 2000-07-10 半導体シリコン単結晶ウエーハ
PCT/JP2001/005892 WO2002005335A1 (en) 2000-07-10 2001-07-06 Single crystal wafer and solar battery cell

Publications (1)

Publication Number Publication Date
DE60139258D1 true DE60139258D1 (de) 2009-08-27

Family

ID=18705372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139258T Expired - Lifetime DE60139258D1 (de) 2000-07-10 2001-07-06 Einkristalline siliziumscheibe und solarzelle

Country Status (9)

Country Link
US (1) US7459720B2 (de)
EP (1) EP1302976B1 (de)
JP (1) JP3910004B2 (de)
KR (1) KR100804247B1 (de)
CN (1) CN1217380C (de)
AU (2) AU6946901A (de)
DE (1) DE60139258D1 (de)
TW (1) TW527635B (de)
WO (1) WO2002005335A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226848B2 (en) * 2001-12-26 2007-06-05 Tokyo Electron Limited Substrate treating method and production method for semiconductor device
JP2003257984A (ja) * 2002-03-05 2003-09-12 Sumitomo Mitsubishi Silicon Corp シリコンウェーハ及びその製造方法
JP2004319909A (ja) * 2003-04-18 2004-11-11 Tadahiro Omi 電子線露光用マスク及びその製造方法
JP4407188B2 (ja) * 2003-07-23 2010-02-03 信越半導体株式会社 シリコンウェーハの製造方法およびシリコンウェーハ
JP5124189B2 (ja) * 2007-07-11 2013-01-23 シャープ株式会社 光電変換素子の製造方法
JP2010251667A (ja) * 2009-04-20 2010-11-04 Sanyo Electric Co Ltd 太陽電池
JP5485060B2 (ja) * 2010-07-28 2014-05-07 三洋電機株式会社 太陽電池の製造方法
JP6091108B2 (ja) * 2012-08-03 2017-03-08 アズビル株式会社 シリコンチューブの製造方法
JP6502399B2 (ja) 2017-02-06 2019-04-17 Ｊｘ金属株式会社 単結晶シリコンスパッタリングターゲット
JP6546953B2 (ja) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
CN111364097A (zh) * 2020-04-15 2020-07-03 晶科能源有限公司 一种定向凝固铸锭的单晶硅籽晶、硅锭、硅块、硅片及其制备方法和应用

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925107A (en) * 1974-11-11 1975-12-09 Ibm Method of stabilizing mos devices
JPS5389367A (en) * 1977-01-18 1978-08-05 Hitachi Cable Ltd Substrate crystal for semiconductor epitaxial growth
US4255212A (en) * 1979-07-02 1981-03-10 The Regents Of The University Of California Method of fabricating photovoltaic cells
JPS56109896A (en) 1980-02-01 1981-08-31 Hitachi Ltd Semiconductor single crystal and its growing method
JPS58128775A (ja) * 1982-01-28 1983-08-01 Toshiba Corp 太陽電池の製造方法
JPS6265996A (ja) * 1985-09-18 1987-03-25 Toshiba Corp 化合物半導体結晶層の製造方法
JPS62226891A (ja) 1986-03-28 1987-10-05 Shin Etsu Handotai Co Ltd 半導体装置用基板
US4824489A (en) * 1988-02-02 1989-04-25 Sera Solar Corporation Ultra-thin solar cell and method
JPH02180796A (ja) * 1988-12-29 1990-07-13 Sharp Corp 炭化珪素単結晶の製造方法
JPH02133926A (ja) * 1988-11-15 1990-05-23 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH0355822A (ja) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
JPH0361634A (ja) 1989-07-27 1991-03-18 Honda Motor Co Ltd 車載エンジンの制御弁制御方法
US5067985A (en) * 1990-06-08 1991-11-26 The United States Of America As Represented By The Secretary Of The Air Force Back-contact vertical-junction solar cell and method
JPH08760B2 (ja) * 1991-03-14 1996-01-10 信越半導体株式会社 シリコンウェーハの品質検査方法
JPH0590117A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 単結晶薄膜半導体装置
JPH05343321A (ja) * 1992-06-08 1993-12-24 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板及びその製法
JP3081706B2 (ja) 1992-06-12 2000-08-28 株式会社東芝 半導体装置用基板
JPH06265996A (ja) * 1993-03-12 1994-09-22 Canon Inc カメラ
JP3634400B2 (ja) * 1994-04-18 2005-03-30 セイコーエプソン株式会社 バルーン流体吐出装置およびその製造方法
JP2789301B2 (ja) 1994-07-21 1998-08-20 住友シチックス株式会社 半導体基板とその製造方法
JPH0888272A (ja) * 1994-09-19 1996-04-02 Shin Etsu Handotai Co Ltd 半導体集積回路用基板の製造方法
CA2172233C (en) * 1995-03-20 2001-01-02 Lei Zhong Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure
JP4026182B2 (ja) * 1995-06-26 2007-12-26 セイコーエプソン株式会社 半導体装置の製造方法、および電子機器の製造方法
JP3397968B2 (ja) 1996-03-29 2003-04-21 信越半導体株式会社 半導体単結晶インゴットのスライス方法
JP3351679B2 (ja) * 1996-05-22 2002-12-03 株式会社リコー 多結晶シリコン薄膜積層体の製造方法及びシリコン薄膜太陽電池
JP3813740B2 (ja) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
FR2769640B1 (fr) * 1997-10-15 1999-12-17 Sgs Thomson Microelectronics Amelioration de la resistance mecanique d'une tranche de silicium monocristallin
JPH11162973A (ja) * 1997-11-28 1999-06-18 Nec Corp 半導体装置の製造方法
JPH11162859A (ja) * 1997-11-28 1999-06-18 Canon Inc シリコン結晶の液相成長方法及びそれを用いた太陽電池の製造方法
JP2000150512A (ja) * 1998-04-06 2000-05-30 Tadahiro Omi シリコン窒化膜及びその形成方法並びに半導体装置
JP3456143B2 (ja) * 1998-05-01 2003-10-14 信越半導体株式会社 積層材料および光機能素子
JP3255114B2 (ja) * 1998-06-18 2002-02-12 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶の製造方法
JP4397491B2 (ja) * 1999-11-30 2010-01-13 財団法人国際科学振興財団 １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
JP4084916B2 (ja) * 2000-06-21 2008-04-30 株式会社東洋新薬 麦若葉由来の素材を含む抗高血圧食品
US6547875B1 (en) * 2000-09-25 2003-04-15 Mitsubishi Materials Silicon Corporation Epitaxial wafer and a method for manufacturing the same

Also Published As

Publication number Publication date
US7459720B2 (en) 2008-12-02
TW527635B (en) 2003-04-11
JP2002025874A (ja) 2002-01-25
EP1302976A4 (de) 2007-09-12
AU2001269469B2 (en) 2006-11-02
KR100804247B1 (ko) 2008-02-20
AU6946901A (en) 2002-01-21
US20030160304A1 (en) 2003-08-28
EP1302976A1 (de) 2003-04-16
JP3910004B2 (ja) 2007-04-25
EP1302976B1 (de) 2009-07-15
KR20030026969A (ko) 2003-04-03
CN1217380C (zh) 2005-08-31
CN1440565A (zh) 2003-09-03
WO2002005335A1 (en) 2002-01-17

Similar Documents

Publication Publication Date Title
DE60002241D1 (de) Solarzellenmodul und Solarzellen-Paneel
DE60122951D1 (de) Solarzellenpaneel
DE60143221D1 (de) Solarzelle
DE10066271B8 (de) Solarzelle
DE60132450D1 (de) Solarzelle und Herstellungsmethode
AU143432S (en) Solar cell element
AU2002368042A8 (en) Photovoltaic cell
DE60227302D1 (de) Photovoltaisches Element und photovoltaische Vorrichtung
DE60306039D1 (de) Speicherzelle und Speichervorrichtung
ATA133898A (de) Zellkulturvorrichtung
DE60220760D1 (de) Solarpaneelanordnung
DE69941616D1 (de) Solarzelle
AU2002303658A1 (en) Silicon solar cell with germanium backside solar cell
DE69907918D1 (de) Solarzellen-BAUELEMENT
DE19981515D2 (de) Photovoltaikeinrichtung
NO20024018L (no) Solcellepanel
DE50115444D1 (de) Photovoltaische zelle
DE60139258D1 (de) Einkristalline siliziumscheibe und solarzelle
ATA2872001A (de) Solar-kollektor
DE60044579D1 (de) Efg-kristall-wachstumsvorrichtung
DE10081105D2 (de) Photovoltaisches Beschattungselement
NO20015429D0 (no) Solfanger med energiglass
DE29907797U1 (de) Solar-Vordach
DE59915172D1 (de) Vertikal aufgebautes leistungshalbleiterbauelement
DE29804410U1 (de) Solarkollektorvorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition