DE60142714D1 - Photolithographisch gemusterte ausserflächige Spulenstrukturen und Verfahren zur Erzeugung - Google Patents
Photolithographisch gemusterte ausserflächige Spulenstrukturen und Verfahren zur ErzeugungInfo
- Publication number
- DE60142714D1 DE60142714D1 DE60142714T DE60142714T DE60142714D1 DE 60142714 D1 DE60142714 D1 DE 60142714D1 DE 60142714 T DE60142714 T DE 60142714T DE 60142714 T DE60142714 T DE 60142714T DE 60142714 D1 DE60142714 D1 DE 60142714D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- photolithographically patterned
- coil structures
- production
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 230000010354 integration Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
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- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
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- H01L2924/1203—Rectifying Diode
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/19041—Component type being a capacitor
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
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- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49071—Electromagnet, transformer or inductor by winding or coiling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/4921—Contact or terminal manufacturing by assembling plural parts with bonding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/49218—Contact or terminal manufacturing by assembling plural parts with deforming
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/573,815 US6856225B1 (en) | 2000-05-17 | 2000-05-17 | Photolithographically-patterned out-of-plane coil structures and method of making |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60142714D1 true DE60142714D1 (de) | 2010-09-09 |
Family
ID=24293496
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60142714T Expired - Lifetime DE60142714D1 (de) | 2000-05-17 | 2001-05-10 | Photolithographisch gemusterte ausserflächige Spulenstrukturen und Verfahren zur Erzeugung |
DE60122343T Expired - Lifetime DE60122343T2 (de) | 2000-05-17 | 2001-05-10 | Photolithographisch gemusterte ausserflächige spulenstrukturen und verfahren zur erzeugung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60122343T Expired - Lifetime DE60122343T2 (de) | 2000-05-17 | 2001-05-10 | Photolithographisch gemusterte ausserflächige spulenstrukturen und verfahren zur erzeugung |
Country Status (9)
Country | Link |
---|---|
US (4) | US6856225B1 (de) |
EP (2) | EP1729174B1 (de) |
JP (1) | JP4813739B2 (de) |
AT (1) | ATE336738T1 (de) |
AU (1) | AU2001261322A1 (de) |
DE (2) | DE60142714D1 (de) |
MY (1) | MY156922A (de) |
TW (1) | TW501151B (de) |
WO (1) | WO2001088612A1 (de) |
Families Citing this family (100)
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KR100517496B1 (ko) * | 2002-01-04 | 2005-09-28 | 삼성전자주식회사 | 스텝-업 구조를 갖는 외팔보 및 그 제조방법 |
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-
2000
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-
2001
- 2001-05-10 AU AU2001261322A patent/AU2001261322A1/en not_active Abandoned
- 2001-05-10 DE DE60142714T patent/DE60142714D1/de not_active Expired - Lifetime
- 2001-05-10 EP EP06016933A patent/EP1729174B1/de not_active Expired - Lifetime
- 2001-05-10 EP EP01935209A patent/EP1301827B1/de not_active Expired - Lifetime
- 2001-05-10 AT AT01935209T patent/ATE336738T1/de not_active IP Right Cessation
- 2001-05-10 JP JP2001584945A patent/JP4813739B2/ja not_active Expired - Fee Related
- 2001-05-10 WO PCT/US2001/014985 patent/WO2001088612A1/en active IP Right Grant
- 2001-05-10 DE DE60122343T patent/DE60122343T2/de not_active Expired - Lifetime
- 2001-05-16 MY MYPI20012305A patent/MY156922A/en unknown
- 2001-05-17 TW TW090111802A patent/TW501151B/zh not_active IP Right Cessation
-
2002
- 2002-05-23 US US10/154,555 patent/US6947291B2/en not_active Expired - Lifetime
-
2003
- 2003-03-11 US US10/387,203 patent/US7000315B2/en not_active Expired - Lifetime
-
2005
- 2005-08-04 US US11/197,675 patent/US7284324B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1301827A1 (de) | 2003-04-16 |
DE60122343D1 (de) | 2006-09-28 |
WO2001088612A1 (en) | 2001-11-22 |
US7284324B2 (en) | 2007-10-23 |
EP1301827B1 (de) | 2006-08-16 |
MY156922A (en) | 2016-04-15 |
EP1729174B1 (de) | 2010-07-28 |
JP2003533897A (ja) | 2003-11-11 |
US6947291B2 (en) | 2005-09-20 |
JP4813739B2 (ja) | 2011-11-09 |
EP1301827A4 (de) | 2003-07-09 |
US20050270135A1 (en) | 2005-12-08 |
ATE336738T1 (de) | 2006-09-15 |
US20030027081A1 (en) | 2003-02-06 |
AU2001261322A1 (en) | 2001-11-26 |
DE60122343T2 (de) | 2006-12-14 |
EP1729174A1 (de) | 2006-12-06 |
US20030179064A1 (en) | 2003-09-25 |
US6856225B1 (en) | 2005-02-15 |
US7000315B2 (en) | 2006-02-21 |
TW501151B (en) | 2002-09-01 |
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