DE602004009821D1 - Halbleiterbauelement und Herstellungsverfahren dafür - Google Patents

Halbleiterbauelement und Herstellungsverfahren dafür

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Publication number
DE602004009821D1
DE602004009821D1 DE602004009821T DE602004009821T DE602004009821D1 DE 602004009821 D1 DE602004009821 D1 DE 602004009821D1 DE 602004009821 T DE602004009821 T DE 602004009821T DE 602004009821 T DE602004009821 T DE 602004009821T DE 602004009821 D1 DE602004009821 D1 DE 602004009821D1
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Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004009821T
Other languages
English (en)
Other versions
DE602004009821T2 (de
Inventor
Shinji Wakisaka
Hiroyasu Jobetto
Takeshi Wakabayashi
Ichiro Mihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003379547A external-priority patent/JP4379693B2/ja
Priority claimed from JP2003395313A external-priority patent/JP4321758B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of DE602004009821D1 publication Critical patent/DE602004009821D1/de
Application granted granted Critical
Publication of DE602004009821T2 publication Critical patent/DE602004009821T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
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JP2003379547A JP4379693B2 (ja) 2003-11-10 2003-11-10 半導体装置およびその製造方法
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JP2003395313A JP4321758B2 (ja) 2003-11-26 2003-11-26 半導体装置
PCT/JP2004/017040 WO2005045902A2 (en) 2003-11-10 2004-11-10 Semiconductor device and manufacturing method thereof

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Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100778597B1 (ko) * 2003-06-03 2007-11-22 가시오게산키 가부시키가이샤 적층 반도체 장치와 그 제조방법
TWI278048B (en) * 2003-11-10 2007-04-01 Casio Computer Co Ltd Semiconductor device and its manufacturing method
JP3925809B2 (ja) * 2004-03-31 2007-06-06 カシオ計算機株式会社 半導体装置およびその製造方法
KR100688500B1 (ko) * 2004-09-06 2007-03-02 삼성전자주식회사 반도체 칩 보호용 더미 패키지 기판을 구비하는 멀티스택패키지와 그 제조 방법
JP2006173232A (ja) * 2004-12-14 2006-06-29 Casio Comput Co Ltd 半導体装置およびその製造方法
KR100651125B1 (ko) * 2005-03-21 2006-12-01 삼성전자주식회사 이중 성형된 멀티 칩 패키지 및 그 제조 방법
JP4449824B2 (ja) * 2005-06-01 2010-04-14 カシオ計算機株式会社 半導体装置およびその実装構造
DE102005041452A1 (de) * 2005-08-31 2007-03-15 Infineon Technologies Ag Dreidimensional integrierte elektronische Baugruppe
WO2007054894A2 (en) * 2005-11-11 2007-05-18 Koninklijke Philips Electronics N.V. Chip assembly and method of manufacturing thereof
JP4609317B2 (ja) * 2005-12-28 2011-01-12 カシオ計算機株式会社 回路基板
US8546929B2 (en) * 2006-04-19 2013-10-01 Stats Chippac Ltd. Embedded integrated circuit package-on-package system
DE102006037538B4 (de) * 2006-08-10 2016-03-10 Infineon Technologies Ag Elektronisches Bauteil, elektronischer Bauteilstapel und Verfahren zu deren Herstellung sowie Verwendung einer Kügelchenplatziermaschine zur Durchführung eines Verfahrens zum Herstellen eines elektronischen Bauteils bzw. Bauteilstapels
JP2008226945A (ja) * 2007-03-09 2008-09-25 Casio Comput Co Ltd 半導体装置およびその製造方法
CN101689539A (zh) * 2007-08-08 2010-03-31 卡西欧计算机株式会社 半导体装置及其制造方法
JP2009043857A (ja) * 2007-08-08 2009-02-26 Casio Comput Co Ltd 半導体装置およびその製造方法
JP5222509B2 (ja) * 2007-09-12 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置
US8253241B2 (en) * 2008-05-20 2012-08-28 Infineon Technologies Ag Electronic module
JP2010062170A (ja) * 2008-09-01 2010-03-18 Casio Comput Co Ltd 半導体装置およびその製造方法
US8138587B2 (en) * 2008-09-30 2012-03-20 Infineon Technologies Ag Device including two mounting surfaces
FI20095110A0 (fi) 2009-02-06 2009-02-06 Imbera Electronics Oy Elektroniikkamoduuli, jossa on EMI-suoja
JP2010219489A (ja) * 2009-02-20 2010-09-30 Toshiba Corp 半導体装置およびその製造方法
JP2010238821A (ja) * 2009-03-30 2010-10-21 Sony Corp 多層配線基板、スタック構造センサパッケージおよびその製造方法
US8513792B2 (en) * 2009-04-10 2013-08-20 Intel Corporation Package-on-package interconnect stiffener
FR2946795B1 (fr) * 2009-06-12 2011-07-22 3D Plus Procede de positionnement des puces lors de la fabrication d'une plaque reconstituee
KR101676620B1 (ko) * 2010-02-05 2016-11-16 에스케이하이닉스 주식회사 적층 반도체 패키지
US8241952B2 (en) 2010-02-25 2012-08-14 Stats Chippac, Ltd. Semiconductor device and method of forming IPD in fan-out level chip scale package
US8951839B2 (en) 2010-03-15 2015-02-10 Stats Chippac, Ltd. Semiconductor device and method of forming conductive vias through interconnect structures and encapsulant of WLCSP
JP5260592B2 (ja) * 2010-04-08 2013-08-14 デクセリアルズ株式会社 保護素子、バッテリ制御装置、及びバッテリパック
JP2012009816A (ja) * 2010-05-28 2012-01-12 Casio Comput Co Ltd 半導体装置およびその製造方法
DE102010041129A1 (de) * 2010-09-21 2012-03-22 Robert Bosch Gmbh Multifunktionssensor als PoP-mWLP
US8617987B2 (en) * 2010-12-30 2013-12-31 Stmicroelectronics Pte Ltd. Through hole via filling using electroless plating
US8766422B2 (en) * 2010-12-30 2014-07-01 Stmicroelectronics Pte Ltd. Through hole via filling using electroless plating
JP2012212522A (ja) * 2011-03-30 2012-11-01 Dainippon Printing Co Ltd 電子素子用積層基板、電子素子、有機エレクトロルミネッセンス表示装置、電子ペーパー、および電子素子用積層基板の製造方法
US20130154106A1 (en) 2011-12-14 2013-06-20 Broadcom Corporation Stacked Packaging Using Reconstituted Wafers
US8513795B2 (en) * 2011-12-27 2013-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. 3D IC configuration with contactless communication
US9548251B2 (en) 2012-01-12 2017-01-17 Broadcom Corporation Semiconductor interposer having a cavity for intra-interposer die
US20130187284A1 (en) 2012-01-24 2013-07-25 Broadcom Corporation Low Cost and High Performance Flip Chip Package
US8587132B2 (en) 2012-02-21 2013-11-19 Broadcom Corporation Semiconductor package including an organic substrate and interposer having through-semiconductor vias
US8558395B2 (en) 2012-02-21 2013-10-15 Broadcom Corporation Organic interface substrate having interposer with through-semiconductor vias
US8749072B2 (en) 2012-02-24 2014-06-10 Broadcom Corporation Semiconductor package with integrated selectively conductive film interposer
US9275976B2 (en) 2012-02-24 2016-03-01 Broadcom Corporation System-in-package with integrated socket
US8872321B2 (en) 2012-02-24 2014-10-28 Broadcom Corporation Semiconductor packages with integrated heat spreaders
US8928128B2 (en) 2012-02-27 2015-01-06 Broadcom Corporation Semiconductor package with integrated electromagnetic shielding
US9048222B2 (en) 2013-03-06 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating interconnect structure for package-on-package devices
US20150143690A1 (en) * 2013-11-22 2015-05-28 Texas Instruments Incorporated Forming integrated inductors and transformers with embedded magnetic cores
US9583420B2 (en) 2015-01-23 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufactures
US9281297B2 (en) 2014-03-07 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Solution for reducing poor contact in info packages
US9281284B2 (en) * 2014-06-20 2016-03-08 Freescale Semiconductor Inc. System-in-packages having vertically-interconnected leaded components and methods for the fabrication thereof
US9449947B2 (en) 2014-07-01 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package for thermal dissipation
US9595482B2 (en) * 2015-03-16 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for die probing
CN108428796B (zh) 2017-02-14 2021-10-15 元太科技工业股份有限公司 有机薄膜晶体管与显示装置
TWI607596B (zh) * 2017-02-14 2017-12-01 元太科技工業股份有限公司 有機薄膜電晶體與顯示裝置
US10211137B2 (en) * 2017-06-08 2019-02-19 Advanced Semiconductor Engineering, Inc. Semiconductor device package

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337027A (en) * 1992-12-18 1994-08-09 General Electric Company Microwave HDI phase shifter
JPH09116273A (ja) * 1995-08-11 1997-05-02 Shinko Electric Ind Co Ltd 多層回路基板及びその製造方法
JP2842378B2 (ja) 1996-05-31 1999-01-06 日本電気株式会社 電子回路基板の高密度実装構造
JPH10100026A (ja) 1996-09-30 1998-04-21 Toshiba Corp 電子部品の搬送装置とこの搬送装置を使用した電子部品装着機
US6525414B2 (en) * 1997-09-16 2003-02-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device including a wiring board and semiconductor elements mounted thereon
JPH11265975A (ja) 1998-03-17 1999-09-28 Mitsubishi Electric Corp 多層化集積回路装置
KR100290784B1 (ko) * 1998-09-15 2001-07-12 박종섭 스택 패키지 및 그 제조방법
US6362436B1 (en) * 1999-02-15 2002-03-26 Mitsubishi Gas Chemical Company, Inc. Printed wiring board for semiconductor plastic package
JP3792445B2 (ja) * 1999-03-30 2006-07-05 日本特殊陶業株式会社 コンデンサ付属配線基板
JP2001044362A (ja) * 1999-07-27 2001-02-16 Mitsubishi Electric Corp 半導体装置の実装構造および実装方法
JP3619395B2 (ja) 1999-07-30 2005-02-09 京セラ株式会社 半導体素子内蔵配線基板およびその製造方法
JP2001094046A (ja) 1999-09-22 2001-04-06 Seiko Epson Corp 半導体装置
JP3409759B2 (ja) 1999-12-09 2003-05-26 カシオ計算機株式会社 半導体装置の製造方法
JP3670917B2 (ja) * 1999-12-16 2005-07-13 新光電気工業株式会社 半導体装置及びその製造方法
US6538210B2 (en) 1999-12-20 2003-03-25 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module, radio device having the same, and method for producing the same
JP3809053B2 (ja) 2000-01-20 2006-08-16 新光電気工業株式会社 電子部品パッケージ
JP3813402B2 (ja) 2000-01-31 2006-08-23 新光電気工業株式会社 半導体装置の製造方法
JP4854845B2 (ja) 2000-02-25 2012-01-18 イビデン株式会社 多層プリント配線板
JP3651346B2 (ja) 2000-03-06 2005-05-25 カシオ計算機株式会社 半導体装置およびその製造方法
KR100344833B1 (ko) 2000-04-03 2002-07-20 주식회사 하이닉스반도체 반도체 패키지 및 그의 제조방법
JP3951091B2 (ja) * 2000-08-04 2007-08-01 セイコーエプソン株式会社 半導体装置の製造方法
JP4183375B2 (ja) 2000-10-04 2008-11-19 沖電気工業株式会社 半導体装置及びその製造方法
JP2002134658A (ja) * 2000-10-24 2002-05-10 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
TW511405B (en) * 2000-12-27 2002-11-21 Matsushita Electric Ind Co Ltd Device built-in module and manufacturing method thereof
TW511415B (en) * 2001-01-19 2002-11-21 Matsushita Electric Ind Co Ltd Component built-in module and its manufacturing method
JP2002270712A (ja) 2001-03-14 2002-09-20 Sony Corp 半導体素子内蔵多層配線基板と半導体素子内蔵装置、およびそれらの製造方法
JP3767398B2 (ja) 2001-03-19 2006-04-19 カシオ計算機株式会社 半導体装置およびその製造方法
JP3999945B2 (ja) * 2001-05-18 2007-10-31 株式会社東芝 半導体装置の製造方法
US20020175402A1 (en) * 2001-05-23 2002-11-28 Mccormack Mark Thomas Structure and method of embedding components in multi-layer substrates
JP2002368184A (ja) 2001-06-08 2002-12-20 Nec Kyushu Ltd マルチチップ半導体装置
US6713860B2 (en) * 2002-02-01 2004-03-30 Intel Corporation Electronic assembly and system with vertically connected capacitors
JP2003197849A (ja) 2001-10-18 2003-07-11 Matsushita Electric Ind Co Ltd 部品内蔵モジュールとその製造方法
JP3861669B2 (ja) * 2001-11-22 2006-12-20 ソニー株式会社 マルチチップ回路モジュールの製造方法
JP3870778B2 (ja) 2001-12-20 2007-01-24 ソニー株式会社 素子内蔵基板の製造方法および素子内蔵基板
US6680529B2 (en) * 2002-02-15 2004-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor build-up package
JP2003273321A (ja) 2002-03-13 2003-09-26 Toshiba Corp 半導体モジュール
JP2003318361A (ja) 2002-04-19 2003-11-07 Fujitsu Ltd 半導体装置及びその製造方法
US6770971B2 (en) * 2002-06-14 2004-08-03 Casio Computer Co., Ltd. Semiconductor device and method of fabricating the same
JP3918681B2 (ja) 2002-08-09 2007-05-23 カシオ計算機株式会社 半導体装置
JP4042568B2 (ja) * 2003-01-10 2008-02-06 コニカミノルタホールディングス株式会社 後処理装置、画像形成システム、及び用紙穿孔方法
US7035113B2 (en) * 2003-01-30 2006-04-25 Endicott Interconnect Technologies, Inc. Multi-chip electronic package having laminate carrier and method of making same
KR100778597B1 (ko) 2003-06-03 2007-11-22 가시오게산키 가부시키가이샤 적층 반도체 장치와 그 제조방법
TWI278048B (en) 2003-11-10 2007-04-01 Casio Computer Co Ltd Semiconductor device and its manufacturing method
JP4432470B2 (ja) 2003-11-25 2010-03-17 株式会社デンソー 半導体装置
JP3795040B2 (ja) 2003-12-03 2006-07-12 沖電気工業株式会社 半導体装置の製造方法
US7489032B2 (en) 2003-12-25 2009-02-10 Casio Computer Co., Ltd. Semiconductor device including a hard sheet to reduce warping of a base plate and method of fabricating the same
JP3945483B2 (ja) 2004-01-27 2007-07-18 カシオ計算機株式会社 半導体装置の製造方法
JP3925809B2 (ja) 2004-03-31 2007-06-06 カシオ計算機株式会社 半導体装置およびその製造方法

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US7692282B2 (en) 2010-04-06
TWI278048B (en) 2007-04-01
EP1683198A2 (de) 2006-07-26
WO2005045902A3 (en) 2005-08-18
DE602004009821T2 (de) 2008-03-06
TW200529338A (en) 2005-09-01
USRE43380E1 (en) 2012-05-15
US7563640B2 (en) 2009-07-21
US20080006943A1 (en) 2008-01-10
WO2005045902A2 (en) 2005-05-19
US7368813B2 (en) 2008-05-06
KR100727540B1 (ko) 2007-06-14
US20050140021A1 (en) 2005-06-30

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