DE602004018219D1 - Metallorganische Germanium-Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen - Google Patents

Metallorganische Germanium-Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen

Info

Publication number
DE602004018219D1
DE602004018219D1 DE602004018219T DE602004018219T DE602004018219D1 DE 602004018219 D1 DE602004018219 D1 DE 602004018219D1 DE 602004018219 T DE602004018219 T DE 602004018219T DE 602004018219 T DE602004018219 T DE 602004018219T DE 602004018219 D1 DE602004018219 D1 DE 602004018219D1
Authority
DE
Germany
Prior art keywords
vapor deposition
deposition processes
compounds suitable
germanium compounds
organometallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004018219T
Other languages
English (en)
Inventor
Deodatta Vinayak Shenai-Khatkhate
Michael Brendan Power
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of DE602004018219D1 publication Critical patent/DE602004018219D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/28—Deposition of only one other non-metal element
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q10/00—Administration; Management
    • G06Q10/10—Office automation; Time management
    • G06Q10/109—Time management, e.g. calendars, reminders, meetings or time accounting
    • G06Q10/1091—Recording time for administrative or management purposes
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/117—Identification of persons
    • A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
    • A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C391/00—Compounds containing selenium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C395/00—Compounds containing tellurium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
    • C07F7/0807—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms comprising Si as a ring atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/0825—Preparations of compounds not comprising Si-Si or Si-cyano linkages
    • C07F7/0827—Syntheses with formation of a Si-C bond
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/30—Germanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q10/00—Administration; Management
    • G06Q10/06—Resources, workflows, human or project management; Enterprise or organisation planning; Enterprise or organisation modelling
    • G06Q10/063—Operations research, analysis or management
    • G06Q10/0631—Resource planning, allocation, distributing or scheduling for enterprises or organisations
    • G06Q10/06311—Scheduling, planning or task assignment for a person or group
    • G06Q10/063116—Schedule adjustment for a person or group
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V20/00—Scenes; Scene-specific elements
    • G06V20/80—Recognising image objects characterised by unique random patterns
    • G—PHYSICS
    • G07—CHECKING-DEVICES
    • G07C—TIME OR ATTENDANCE REGISTERS; REGISTERING OR INDICATING THE WORKING OF MACHINES; GENERATING RANDOM NUMBERS; VOTING OR LOTTERY APPARATUS; ARRANGEMENTS, SYSTEMS OR APPARATUS FOR CHECKING NOT PROVIDED FOR ELSEWHERE
    • G07C1/00—Registering, indicating or recording the time of events or elapsed time, e.g. time-recorders for work people
DE602004018219T 2003-04-05 2004-04-01 Metallorganische Germanium-Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen Expired - Lifetime DE602004018219D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46079103P 2003-04-05 2003-04-05
US51347603P 2003-10-22 2003-10-22

Publications (1)

Publication Number Publication Date
DE602004018219D1 true DE602004018219D1 (de) 2009-01-22

Family

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Family Applications (2)

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DE602004030058T Expired - Lifetime DE602004030058D1 (de) 2003-04-05 2004-04-01 Zur Verwendung in Dampfphasenabscheidungsprozessen geeignete, metallorganische Germanium-Verbindungen
DE602004018219T Expired - Lifetime DE602004018219D1 (de) 2003-04-05 2004-04-01 Metallorganische Germanium-Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen

Family Applications Before (1)

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DE602004030058T Expired - Lifetime DE602004030058D1 (de) 2003-04-05 2004-04-01 Zur Verwendung in Dampfphasenabscheidungsprozessen geeignete, metallorganische Germanium-Verbindungen

Country Status (8)

Country Link
US (2) US7413776B2 (de)
EP (2) EP1464724B1 (de)
JP (2) JP4954448B2 (de)
KR (2) KR101200524B1 (de)
CN (1) CN100516289C (de)
DE (2) DE602004030058D1 (de)
SG (1) SG126757A1 (de)
TW (1) TWI318222B (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
EP1995347A4 (de) * 2006-02-08 2010-04-28 Jsr Corp Verfahren zur bildung eines metallfilms
JP4957037B2 (ja) * 2006-03-24 2012-06-20 東ソー株式会社 有機シラン化合物、それを含むＳｉ含有膜形成材料、製造方法および用途
GB2452224B (en) 2006-06-20 2011-02-23 Inst Energiteknik The use of biphenyl, terphenyl, and fluorene sulphonic acid based tracers for monitoring streams of fluids
US8318966B2 (en) * 2006-06-23 2012-11-27 Praxair Technology, Inc. Organometallic compounds
KR100757415B1 (ko) 2006-07-13 2007-09-10 삼성전자주식회사 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
EP2139680A4 (de) * 2007-04-02 2012-01-04 Univ Arizona Neuartige verfahren zur herstellung und verwendung von halosilylgermanien
US20080312356A1 (en) * 2007-06-13 2008-12-18 Applied Mcrostructures, Inc. Vapor-deposited biocompatible coatings which adhere to various plastics and metal
TWI471449B (zh) 2007-09-17 2015-02-01 Air Liquide 用於ｇｓｔ膜沈積之碲前驅物
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
KR100960355B1 (ko) * 2008-03-05 2010-05-28 한화케미칼 주식회사 수소 저장 물질로서 유기-전이 금속 하이드라이드의 개선된제조 방법
WO2010055423A2 (en) 2008-05-29 2010-05-20 L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Tellurium precursors for film deposition
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
KR100984718B1 (ko) * 2008-08-11 2010-10-01 한화케미칼 주식회사 수소 저장물질로써 아릴 또는 알킬을 포함하는 유기-전이 금속 하이드라이드의 보다 개선된 제조방법
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
JP2011054935A (ja) * 2009-06-19 2011-03-17 Rohm & Haas Electronic Materials Llc ドーピング方法
JP2011009479A (ja) * 2009-06-26 2011-01-13 Gas-Phase Growth Ltd 膜形成材料、膜形成方法、及び素子
WO2011027321A1 (en) 2009-09-02 2011-03-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Dihalide germanium(ii) precursors for germanium-containing film depositions
WO2011095849A1 (en) 2010-02-03 2011-08-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
US20120277457A1 (en) * 2010-10-12 2012-11-01 Air Products And Chemicals, Inc. Aminosilanes and methods for making same
DE112011105102T5 (de) * 2011-03-28 2014-01-02 Applied Materials, Inc. Verfahren und Vorrichtung zum selektiven Abscheiden von epitaxialen Germanium-Spannungsbeaufschlagungslegierungen
JP6007662B2 (ja) 2011-09-05 2016-10-12 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
US8993072B2 (en) * 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP2012142586A (ja) * 2012-02-20 2012-07-26 Gas-Phase Growth Ltd 膜形成材料および膜形成方法
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
JP2015514106A (ja) * 2012-04-05 2015-05-18 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ メチルゲルマニウムクロリドを含む有機官能性化合物を調製するための方法
US9214630B2 (en) 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
KR102326396B1 (ko) 2013-09-27 2021-11-12 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물
KR101720017B1 (ko) * 2014-01-08 2017-03-27 (주)디엔에프 신규한 트리실릴아민 유도체, 이의 제조방법 및 이를 이용한 실리콘 함유 박막
KR101659610B1 (ko) * 2014-03-18 2016-09-23 주식회사 유진테크 머티리얼즈 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법
US10464953B2 (en) * 2016-10-14 2019-11-05 Versum Materials Us, Llc Carbon bridged aminosilane compounds for high growth rate silicon-containing films
EP3410466B1 (de) * 2017-06-01 2020-02-26 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
KR102364476B1 (ko) * 2020-05-08 2022-02-18 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
KR20230046303A (ko) * 2020-07-24 2023-04-05 버슘머트리얼즈 유에스, 엘엘씨 조성물 및 게르마늄 시드층을 위한 이의 사용 방법
WO2023039153A1 (en) * 2021-09-10 2023-03-16 The Regents Of The University Ofmichigan Gas-assisted cocrystal de-sublimation

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US549108A (en) * 1895-11-05 Machine for manufacturing lacing-studs
US82300A (en) * 1868-09-22 Improved oak-spring
US111013A (en) * 1871-01-17 Improvement in machines for making spikes
GB626398A (en) 1946-04-16 1949-07-14 British Thomson Houston Co Ltd Improvements in and relating to methods of preparing organogermanium halides
US2444270A (en) * 1946-04-16 1948-06-29 Gen Electric Method of preparing organogermanium halides
US3442921A (en) * 1964-10-21 1969-05-06 Monsanto Co Process for the preparation of tetraorgano germanes
US3470220A (en) * 1965-08-19 1969-09-30 Monsanto Co Germanium and tin compounds
US3446824A (en) * 1965-12-10 1969-05-27 Monsanto Co Direct process for the preparation of organogermanium halides
US3935040A (en) * 1971-10-20 1976-01-27 Harris Corporation Process for forming monolithic semiconductor display
DE2212295C3 (de) 1972-03-14 1975-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten
US3985590A (en) * 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US4506815A (en) 1982-12-09 1985-03-26 Thiokol Corporation Bubbler cylinder and dip tube device
WO1985004405A1 (en) * 1984-03-26 1985-10-10 The Secretary Of State For Defence In Her Britanni The preparation of metal alkyls
EP0216887B1 (de) * 1985-04-09 1991-07-10 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Verfahren zur herstellung von gruppe-ii-metallalkylen
JPS61281869A (ja) * 1985-06-07 1986-12-12 Canon Inc 堆積膜形成法
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPH084070B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 薄膜半導体素子及びその形成法
US4681640A (en) * 1986-08-06 1987-07-21 The United States Of America As Represented By The Secretary Of The Army Laser-induced chemical vapor deposition of germanium and doped-germanium films
US4877651A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
JPH02225399A (ja) 1988-11-11 1990-09-07 Fujitsu Ltd エピタキシャル成長方法および成長装置
JPH02208925A (ja) * 1989-02-09 1990-08-20 Nippon Telegr & Teleph Corp <Ntt> 半導体膜の形成方法
EP0420596B1 (de) 1989-09-26 1996-06-19 Canon Kabushiki Kaisha Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
JPH04151839A (ja) * 1990-10-16 1992-05-25 Kawasaki Steel Corp シリコンオキシナイトライド膜の製造方法
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5344948A (en) * 1992-02-25 1994-09-06 Iowa State University Research Foundation, Inc. Single-source molecular organic chemical vapor deposition agents and use
JPH05259089A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 半導体結晶の製造方法
US5459108A (en) * 1992-10-06 1995-10-17 Sharp Kabushiki Kaisha Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone
JP2684942B2 (ja) * 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
US5502227A (en) 1993-07-27 1996-03-26 Cvd, Incorporated Liquid indium source
FR2722781A1 (fr) * 1994-07-20 1996-01-26 Inst National Polytech Inpt Procede pour realiser la synthese d'un ou de composes organiques ou organometalliques et applications notamment aux reactions d'aclation, reactions de redistribution et reactions pericycliques
US5489550A (en) * 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive
US5924012A (en) * 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US5874368A (en) * 1997-10-02 1999-02-23 Air Products And Chemicals, Inc. Silicon nitride from bis(tertiarybutylamino)silane
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6159855A (en) * 1998-04-28 2000-12-12 Micron Technology, Inc. Organometallic compound mixtures in chemical vapor deposition
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
US6365231B2 (en) * 1998-06-26 2002-04-02 Kabushiki Kaisha Toshiba Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
US6214729B1 (en) * 1998-09-01 2001-04-10 Micron Technology, Inc. Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
JP3379100B2 (ja) * 1998-09-04 2003-02-17 日本電気株式会社 シングルダマシン構造の埋め込み配線及びその形成方法
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6184403B1 (en) * 1999-05-19 2001-02-06 Research Foundation Of State University Of New York MOCVD precursors based on organometalloid ligands
US6099903A (en) * 1999-05-19 2000-08-08 Research Foundation Of State University Of New York MOCVD processes using precursors based on organometalloid ligands
US6153261A (en) * 1999-05-28 2000-11-28 Applied Materials, Inc. Dielectric film deposition employing a bistertiarybutylaminesilane precursor
DE60042045D1 (de) * 1999-06-22 2009-06-04 Panasonic Corp Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren
US6238734B1 (en) * 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6444038B1 (en) 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
US7041170B2 (en) * 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
JP2002128787A (ja) * 1999-12-15 2002-05-09 Mitsubishi Materials Corp 有機銅化合物及び該化合物を含む混合液並びにそれを用いて作製された銅薄膜
US6589329B1 (en) * 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6642401B2 (en) * 2000-03-14 2003-11-04 Nissan Chemical Industries, Ltd. β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same
EP1160355B1 (de) 2000-05-31 2004-10-27 Shipley Company LLC Verdampfer
US6514886B1 (en) * 2000-09-22 2003-02-04 Newport Fab, Llc Method for elimination of contaminants prior to epitaxy
JP5290488B2 (ja) * 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
JP3998408B2 (ja) * 2000-09-29 2007-10-24 株式会社東芝 半導体装置及びその製造方法
US6500772B2 (en) * 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020127883A1 (en) * 2001-01-09 2002-09-12 Conti Richard A. Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
KR101027485B1 (ko) 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
AU2002950405A0 (en) 2002-07-26 2002-09-12 Chirogen Pty Limited Chemical methods
WO2004081986A2 (en) * 2003-03-12 2004-09-23 Asm America Inc. Method to planarize and reduce defect density of silicon germanium
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys

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TW200424243A (en) 2004-11-16
US20090156852A1 (en) 2009-06-18
JP2010235633A (ja) 2010-10-21
KR20110091491A (ko) 2011-08-11
KR101200524B1 (ko) 2012-11-13
JP4954448B2 (ja) 2012-06-13
EP1990345A1 (de) 2008-11-12
TWI318222B (en) 2009-12-11
EP1990345B1 (de) 2010-11-10
SG126757A1 (en) 2006-11-29
US7413776B2 (en) 2008-08-19
US20040194703A1 (en) 2004-10-07
JP2004308007A (ja) 2004-11-04
KR101059732B1 (ko) 2011-08-26
KR20040086811A (ko) 2004-10-12
CN1584108A (zh) 2005-02-23
EP1464724B1 (de) 2008-12-10
US7767840B2 (en) 2010-08-03
EP1464724A3 (de) 2007-01-10
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DE602004030058D1 (de) 2010-12-23
JP5460501B2 (ja) 2014-04-02

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